International Rectifier IRHN2C50SE, IRHN7C50SE Datasheet
Provisional Data Sheet No. PD-9.1476A
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REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTOR
SINGLE EVENT EFFECT (SEE) RAD HARD
600 Volt, 0.60
ΩΩ
Ω, (SEE) RAD HARD HEXFET
ΩΩ
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure. Additionally , under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFET s, such as voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number BVDSS RDS(on) ID
IRHN2C50SE
IRHN7C50SE
Features:
■ Radiation Hardened up to 1 x 10
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron Tolerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Light-Weight
IRHN2C50SE
IRHN7C50SE
N-CHANNEL
600V 0.60Ω
5
Rads (Si)
10.4A
Absolute Maximum Ratings
Parameter IRHN2C50SE, IRHN7C50SE Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 10.4
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 6.5
I
DM
PD @ TC = 25°C Max. Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 3.0
T
J
T
STG
Pulsed Drain Current ➀ 41.6
Linear Derating Factor 1.2 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 500 mJ
Avalanche Current ➀ 10.4 A
Repetitive Avalanche Energy ➀ 15 mJ
Operating Junction -55 to 150
Storage Temperature Range
Package Mounting Surface Temperature 300
Weight 2.6 (typical) g
Pre-Radiation
(for 5 seconds)
A
V/ns
o
C
IRHN2C50SE, IRHN7C50SE Devices Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 600 — — V VGS = 0V, ID = 1.0 mA
/∆TJTemperature Coefficient of Breakdown — 0.45 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — — 0.60 VGS = 12V, ID = 6.5A
On-State Resistance — — 0.65 Ω VGS = 12V, ID = 10.4A
Gate Threshold Voltage 2.5 — 4.5 V VDS = VGS, ID = 1.0 mA
Forward Transconductance 3.0 — — S ( )VDS > 15V, IDS = 6.5A ➃
Zero Gate Voltage Drain Current — — 50 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 150 VGS =12V, ID = 10.4A
Gate-to-Source Charge — — 30 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 75
Turn-On Delay Time — — 55 VDD = 300V , ID = 10.4A,
Rise Time — — 190 RG = 2.35Ω
Turn-Off Delay Time — — 210
Fall Time — — 130
Internal Drain Inductance — 2.0 —
Internal Source Inductance — 6.5 —
Input Capacitance — 2700 — VGS = 0V, VDS = 25V
Output Capacitance — 300 — f = 1.0 MHz
Reverse Transfer Capacitance — 61 —
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 10.4 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ➀ — — 41.6 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 1.62 V Tj = 25°C, IS = 10.4A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 1200 ns Tj = 25°C, IF = 10.4A, di/dt ≤ 100A/µs
rr
QRRReverse Recovery Charge — — 16 µCV
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
R
thJ-PCB
Junction-to-Case — — 0.83
Junction-to-PC board — TBD — soldered to a copper-clad PC board
A
≤ 50V ➃
DD
K/W➄
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