International Rectifier IRHN7450SE Datasheet
Provisional Data Sheet No. PD-9.1313A
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REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTOR
SINGLE EVENT EFFECT (SEE) RAD HARD
500 Volt, 0.51
ΩΩ
Ω, (SEE) RAD HARD HEXFET
ΩΩ
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure. Additionally , under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFET s, such as voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number BVDSS RDS(on) ID
IRHN7450SE 500V 0.51Ω 12A
Features:
■ Radiation Hardened up to 1 x 10
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron Tolerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Lightweight
IRHN7450SE
N-CHANNEL
5
Rads (Si)
Absolute Maximum Ratings
Parameter IRHN7450SE Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 12
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 7.0
I
DM
PD @ TC = 25°C Max. Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 3.5
T
J
T
STG
Pulsed Drain Current ➀ 48
Linear Derating Factor 1.2 W/K ➄
Gate-to-Source Voltage ±2 0 V
Single Pulse Avalanche Energy ➁ 500 m J
Avalanche Current ➀ 12 A
Repetitive Avalanche Energy ➀ 15 mJ
Operating Junction -55 to 150
Storage T emperature Range
Package Mounting Surface Temperature 300
Weight 2.6 (typical) g
Pre-Radiation
(for 5 seconds)
A
V/ns
o
C
IRHN7450SE Device Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V , ID = 1.0 mA
/∆TJT emperature Coefficient of Breakdown — 0.6 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — — 0.51 VGS = 12V , ID = 7A
On-State Resistance — — 0.57 Ω VGS = 12V , ID = 12A
Gate Threshold V oltage 2.5 — 4.5 V VDS = VGS, ID = 1.0 mA
Forward Transconductance 3 — — S ( )VDS > 15V , IDS = 7A ➃
Zero Gate Voltage Drain Current — — 50 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
T otal Gate Charge — — 14 0 VGS =12V , ID = 12A
Gate-to-Source Charge — — 50 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 60
Turn-On Delay T ime — — 35 VDD = 250V , ID =12A,
Rise Time — — 50 RG = 2.35Ω
Turn-Off Delay Time — — 100
Fall T ime — — 60
Internal Drain Inductance — 2.0 —
Internal Source Inductance — 6.5 —
Input Capacitance — 4000 — VGS = 0V , VDS = 25V
Output Capacitance — 330 — f = 1.0 MHz
Reverse Transfer Capacitance — 52 —
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 12 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ➀ —— 48 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 1.6 V Tj = 25°C, IS = 12A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 500 ns Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs
rr
QRRReverse Recovery Charge — — 16 µ CV
t
Forward Turn-On T ime
on
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
R
thJ-PCB
Junction-to-Case — — 0.83
Junction-to-PC board — TBD — soldered to a copper-clad PC board
A
K/W➄
DD
≤ 50V ➃
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