International Rectifier IRHN7250, IRHN8250 Datasheet

REPETITIVE AVALANCHE AND dv/dt RATED

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HEXFET

®

TRANSIST OR

Provisional Data Sheet PD 9.679C

IRHN7250
IRHN8250

N-CHANNEL

MEGA RAD HARD

200 Volt, 0.10

International Rectifier’s MEGA RAD HARD technology
HEXFET power MOSFETs demonstrate excellent
threshold voltage stability and breakdown voltage sta­bility at total radiation doses as high as 1 x 10
(Si). Under identical pre- and post-radiation test con­ditions, International Rectifier’s RAD HARD HEXFETs
retain identical electrical specifications up to 1 x 10
Rads (Si) total dose. At 1 x 106 Rads (Si) total dose,
under the same pre-dose conditions, only minor shifts
in the electrical specifications are observed and are so
specified in table 1. No compensation in gate drive cir­cuitry is required. In addition, these devices are capable
of surviving transient ionization pulses as high as 1 x

12

Rads (Si)/Sec, and return to normal operation within

10
a few microseconds. Single Event Effect (SEE) testing
of International Rectifier RAD HARD HEXFETs has dem­onstrated virtual immunity to SEE failure. Since the
MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.

RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt­age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.

They are well-suited for applications such as switching
power supplies, motor controls , inv erters, choppers , au­dio amplifiers and high-energy pulse circuits in space
and weapons environments.

ΩΩ

Ω, MEGA RAD HARD HEXFET

ΩΩ

Absolute Maximum Ratings

Parameter IRHN7250, IRHN8250 Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current 26

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 16

I

DM

PD @ TC = 25°C Max. Power Dissipation 150 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ 5.0

T

J

T

STG

Pulsed Drain Current ➀ 104

Linear Derating Factor 1.2 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 500 mJ
Avalanche Current ➀ 26 A
Repetitive Avalanche Energy ➀ 15 mJ

Operating Junction -55 to 150
Storage Temperature Range

Package Mounting Surface Temperature 300
Weight 2.6 (typical) g

6

Rads

Product Summary

Part Number BVDSS RDS(on) ID

IRHN7250 200V 0.10Ω 26A
IRHN8250 200V 0.10Ω 26A

5

Features:

■ Radiation Hardened up to 1 x 10

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

■ Gamma Dot (Flash X-Ray) Hardened

■ Neutron Tolerant

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Light-weight

6

Rads (Si)

Pre-Radiation

(for 5 sec.)

A

V/ns

o

C

F-347

IRHN7250/IRHN8250 Devices

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min. Typ. Max. Units Test Conditions

BV

DSS

∆BV
R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

DSS

Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 1.0 mA

/∆TJTemperature Coefficient of Breakdown — 0.28 — V/°C Reference to 25°C, ID = 1.0 mA

Voltage
Static Drain-to-Source — — 0.10 VGS = 12V, ID = 16A
On-State Resistance — — 0.11 Ω VGS = 12V, ID = 26A
Gate Threshold V oltage 2.0 — 4.0 V VDS = VGS, ID = 1.0 mA
Forward Transconductance 8.0 — — S ( )VDS > 15V, IDS = 16A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V

— — 250 VDS = 0.8 x Max Rating

Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 170 VGS =12V, ID = 26A
Gate-to-Source Charge — — 30 VDS = Max. Rating x 0.5
Gate-to-Drain (‘Miller’) Charge — — 60
Turn-On Delay Time — — 33 VDD = 100V , ID = 26A,
Rise Time — — 140 RG = 2.35Ω
Turn-Off Delay Time — — 140
Fall Time — — 140
Internal Drain Inductance — 2.0 —

Internal Source Inductance — 4. 1 —

Input Capacitance — 4700 — VGS = 0V, VDS = 25V
Output Capacitance — 850 — f = 1.0 MHz
Reverse Transfer Capacitance — 210 — (see figure 22)

Ω

µA

nA

nC

ns

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

nH

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

pF

Pre-Radiation

VGS = 0V, TJ = 125°C

(see figures 23 and 31)

(see figure 22)

Modified MOSFET
symbol showing the

internal inductances.

➃

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

I

Continuous Source Current (Body Diode) — — 26 Modified MOSFET symbol showing the

S

I

Pulse Source Current (Body Diode) ➀ — — 104 integral reverse p-n junction rectifier.

SM

V

Diode Forward Voltage — — 1.9 V Tj = 25°C, IS = 26A, VGS = 0V ➃

SD

t

Reverse Recovery Time — 820 ns Tj = 25°C, IF = 26A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — 12 µCV

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

R

thJC

R

thJPCB

Junction-to-Case — — 0.83
Junction-to-PC board — TBD — soldered to a copper-clad PC board

F-348

A

≤ 50V ➃

DD

+ LD.

S

K/W➄

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Radiation Perf ormance of Mega Rad Hard HEXFETs

International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability. The
hardness assurance program at International Recti­fier uses two radiation environments.

Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and
figure 8a and a V

bias condition equal to 80%

DSS

of the device rated voltage per note 7 and figure
8b. Pre- and post-radiation limits of the devices irra­diated to 1 x 10

5

Rads (Si) are identical and are pre­sented in Tab le 1, column 1, IRHN7250. Device
performance limits at a post radiation level of 1 x

6

10

Rads (Si) are presented in Table 1, column 2,
IRHN8250. The values in Table 1 will be met for ei­ther of the two low dose rate test circuits that are
used. Typical delta curves showing radiation re­sponse appear in figures 1 through 5. Typical post­radiation curves appear in figures 10 through 17.

Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10
Rads (Si), no change in limits are specified in DC
parameters. At a radiation level of 1 x10
leakage remains low and the device is usable with
no change in drive circuitry required.

High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
(Si)/Sec. Photocurrent and transient voltage wave­forms are shown in figure 7, and the recommended
test circuit to be used is shown in figure 9.

International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. The ef­fects on bulk silicon of the type used by Interna­tional Rectifier on RAD HARD HEXFETs are shown
in figure 6. Single Event Effects characterization is
shown in Table 3.

Table 1. Low Dose Rate ➅ ➆ IRHN7250 IRHN8250

BV
V

GS(th)

I

GSS

I

GSS

I

DSS

R

DS(on)1

V

SD

DSS

Parameter

Drain-to-Source Breakdown Voltage 200 — 200 —
Gate Threshold Voltage ➃ 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0 mA
Gate-to-Source Leakage Forward — 100 — 100
Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20V
Zero Gate Voltage Drain Current — 25 — 50 µAVDS = 0.8 x Max Rating, VGS = 0
Static Drain-to-Source ➃ — 0.10 — 0.150 Ω VGS = 12V, ID = 16A
On-State Resistance One
Diode Forward Voltage ➃ — 1.9 — 1.9 V TC = 25°C, IS = 26A,VGS = 0V

100K Rads (Si) 1000K Rads (Si) Units Test Conditions ➉

min. max. min. max.

P ost-Radiation Characteristics

5

6

Rads (Si),

12

Rads

V

nA

VGS = 0V, ID = 1.0 mA

VGS = +20V

Table 2. High Dose Rate ➇

Parameter Min. Typ Max. Min.Typ. Max. Units Test Conditions

V
I

di/dt — — 160 — — 8.0 A/µsec Rate of rise of photo-current
L

Drain-to-Source Voltage — — 160 — — 160 V Applied drain-to-source voltage

DSS

PP

1

Table 3. Single Event Effects ➈

Parameter Typ. Units Ion

BV

DSS

200 V Ni 28 1 x 10

1011 Rads (Si)/sec 1012 Rads (Si)/sec

— 15 — — 15 — A Peak radiation induced photo-current

1.0 — — 20 — — µH Circuit inductance required to limit di/dt

during gamma-dot

LET (Si) Fluence Range VDS Bias VGS Bias

(MeV/mg/cm

2

) (ions/cm2)(µm) (V) (V)

5

~41 160 -5

F-349

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Post-Radiation

VGS = 12V

ID = 16A

Figure 1. – Typical Response of Gate Threshold Volta ge

Figure 3. – Typical Response of Transconductance Vs.

Vs. Total Dose Exposure

VDS ≥ 15V

ID = 16A

Total Dose Exposure

F-350

Figure 2. – Typical Response of On-State Resistance

Figure 4. – Typical Response of Drain-to-Source

Vs. Total Dose Exposure

Breakdown Vs. Total Dose Exposure

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Post-Radiation

Figure 5. – Typical Zero Gate Voltage Drain Current

Figure 7. – Typical Transient Response

of Rad Hard HEXFET During 1 x1012 Rad

Vs. Total Dose Exposure

(Si)/Sec Exposure

Figure 6. – Typical On-State Resistance Vs. Neutron

Figure 8a. – During Radiation

Gate Stress of V

Figure 8b. – During Radiation

Stress = 80% of B

V

DSS

GSS

= 12V

VDSS

Fluence Level

Figure 9. – High Dose Rate

(Gamma Dot) Test Circuit

F-351