International Rectifier IRHN7230, IRHN8230 Datasheet

Provisional Data Sheet No. PD-9.822A

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REPETITIVE A V ALANCHE AND dv/dt RATED

HEXFET

200 V olt, 0.40

International Rectifier’s MEGA RAD HARD technology
HEXFETs demonstrate excellent threshold voltage sta­bility and breakdown voltage stability at total radiation
doses as high as 1 x 10
and post-radiation test conditions, International Rectifier’s
RAD HARD HEXFETs retain identical electrical specifi­cations up to 1 x 10
(Si) total dose, under the same pre-dose conditions, only
minor shifts in the electrical specifications are observed
and are so specified in table 1. No compensation in gate
drive circuitry is required. In addition, these devices are
capable of surviving transient ionization pulses as high
as 1 x 10
within a few microseconds. Single Event Effect (SEE)
testing of International Rectifier RAD HARD HEXFETs
has demonstrated virtual immunity to SEE failure. Since
the MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.

RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt­age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.

They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au­dio amplifiers and high-energy pulse circuits in space and
weapons environments.

12

Rads (Si)/Sec, and return to normal operation

®

TRANSISTOR

ΩΩ

Ω, MEGA RAD HARD HEXFET

ΩΩ

6

Rads (Si). Under identical pre-

5

Rads (Si) total dose. At 1 x 106 Rads

Absolute Maximum Ratings

Parameter IRHN7230, IRHN8230 Units

ID @ VGS = 12V , TC = 25°C Continuous Drain Current 9.0

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 6.0

I

DM

PD @ TC = 25°C Max. Power Dissipation 75 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ 5.0 (see fig. 30)

T

J

T

STG

Pulsed Drain Current ➀ 36

Linear Derating Factor 0.60 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 330 (see fig. 29) mJ
Avalanche Current ➀ 9.0 A
Repetitive Avalanche Energy ➀ 7.5 mJ

Operating Junction -55 to 150
Storage Temperature Range

Package Mounting Surface Temperature 300
Weight 2.6 (typical) g

IRHN7230
IRHN8230

N-CHANNEL

MEGA RAD HARD

Product Summary

Part Number BVDSS RDS(on) I D

IRHN7230 200V 0.40Ω 9.0A
IRHN8230 200V 0.40Ω 9.0A

Features:

■ Radiation Hardened up to 1 x 10

■ Single Event Burnout (SEB) Hardened

■ Single Event Gate Rupture (SEGR) Hardened

■ Gamma Dot (Flash X-Ray) Hardened

■ Neutron Tolerant

■ Identical Pre- and Post-Electrical Test Conditions

■ Repetitive Avalanche Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Surface Mount

■ Light-weight

(for 5 seconds)

6

Rads (Si)

Pre-Radiation

A

V/ns

o

C

IRHN7230, IRHN8230 Devices Pre-Radiation

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min. Typ. Max. Units Test Conditions

BV

DSS

∆BV
R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

DSS

Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 1.0 mA

/∆TJTemperature Coefficient of Breakdown — 0.27 — V/°C Reference to 25°C, ID = 1.0 mA

Voltage
Static Drain-to-Source — — 0.40 VGS = 12V, ID = 6.0A
On-State Resistance — — 0.49 Ω VGS = 12V, ID = 9.0A
Gate Threshold V oltage 2.0 — 4.0 V VDS = VGS, ID = 1.0 mA
Forward Transconductance 3.0 — — S ( )VDS > 15V, IDS = 6.0A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V

— — 250 VDS = 0.8 x Max Rating

Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 50 VGS =12V, ID = 9.0A
Gate-to-Source Charge — — 10 VDS = Max. Rating x 0.5
Gate-to-Drain (‘Miller’) Charge — — 2 0 (see figures 23 and 31)
Turn-On Delay Time — — 35 VDD = 100V, ID = 9.0A,
Rise Tim e — — 80 RG = 7.5Ω
Turn-Off Delay Time — — 60 (see figure 28)
Fall Time — — 46
Internal Drain Inductance — 2. 0 —

Internal Source Inductance — 4.1 —

Input Capacitance — 1100 — VGS = 0V, VDS = 25V
Output Capacitance — 250 — f = 1.0 MHz
Reverse Transfer Capacitance — 65 — (see figure 22)

Ω

µA

nA

nC

ns

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

nH

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

pF

VGS = 0V, TJ = 125°C

Modified MOSFET
symbol showing the
internal inductances.

➃

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

I

Continuous Source Current (Body Diode) — — 9. 0 Modified MOSFET symbol showing the

S

I

Pulse Source Current (Body Diode) ➀ ——36 integral reverse p-n junction rectifier.

SM

V

Diode Forward Voltage — — 2.0 V Tj = 25°C, IS = 9A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 460 ns Tj = 25°C, IF = 9A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 5. 0 µCV

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by L

on

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

R

thJC

R

thJPCB

Junction-to-Case — — 1.67
Junction-to-PC board — TBD — soldered to a copper-clad PC board

A

≤ 50V ➃

DD

+ LD.

S

K/W➄

IRHN7230, IRHN8230 Devices Radiation Characteristics

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Radiation Performance of Mega Rad Hard HEXFETs

International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability . The hard­ness assurance program at International Rectifier uses
two radiation environments.

Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a V
bias condition equal to 80% of the device rated voltage
per note 7 and figure 8b. Pre- and post-radiation limits
of the devices irradiated to 1 x 10

5

Rads (Si) are identi­cal and are presented in T able 1, column 1, IRHN7230.
Device performance limits at a post radiation level of 1

6

x 10

Rads (Si) are presented in Table 1, column 2,
IRHN8230. The values in T able 1 will be met for either of
the two low dose rate test circuits that are used. Typi­cal delta curves showing radiation response appear in
figures 1 through 5. Typical post-radiation curves appear
in figures 10 through 17.

Table 1. Low Dose Rate ➅ ➆ IRHN7230 IRHN8230

BV

DSS

V

GS(th)

I

GSS

I

GSS

I

DSS

R

DS(on)1

V

SD

Parameter

Drain-to-Source Breakdown Voltage 200 — 200 —
Gate Threshold Voltage ➃ 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0 mA
Gate-to-Source Leakage Forward — 1 00 — 100
Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20V
Zero Gate Voltage Drain Current — 25 — 25 µAVDS = 0.8 x Max Rating, VGS = 0
Static Drain-to-Source ➃ — 0.40 — 0.53 Ω VGS = 12V, ID = 6.0A
On-State Resistance One
Diode Forward Voltage ➃ — 1.6 — 1.6 V TC = 25°C, IS = 9.0A,VGS = 0V

100K Rads (Si) 1000K Rads (Si) Units Test Conditions ➉

min. max. min. max.

Both pre- and post-radiation performance are tested and
specified using the same drive circuitry and test condi­tions in order to provide a direct comparison. It should
be noted that at a radiation level of 1 x 10
change in limits are specified in DC parameters. At a
radiation level of 1 x 10

6

Rads (Si), leakage remains
low and the device is usable with no change in drive
circuitry required.

DSS

High dose rate testing may be done on a special re­quest basis, using a dose rate up to 1 x 10
Sec. Photocurrent and transient voltage waveforms are
shown in figure 7 and the recommended test circuit to
be used is shown in figure 9.

International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. The effects
on bulk silicon of the type used by International Recti­fier on RAD HARD HEXFETs are shown in figure 6.
Single Event Effects characterization is shown in
T able 3.

V

nA

VGS = 0V, ID = 1.0 mA

VGS = +20V

5

Rads (Si), no

12

Rads (Si)/

Table 2. High Dose Rate ➇

Parameter Min. Typ Max. Min. Typ. Max. Units Test Conditions

V
I

di/dt — — 160 — — 8.0 A/µsec Rate of rise of photo-current
L

Drain-to-Source Voltage — — 160 — — 1 60 V Applied drain-to-source voltage

DSS

PP

1

Table 3. Single Event Effects ➈

Parameter Typ. Units Ion

BV

DSS

200 V Ni 28 1 x 10

1011 Rads (Si)/sec 1012 Rads (Si)/sec

during gamma-dot

—20——20 — A Peak radiation induced photo-current

1.0 — — 20 — — µH Circuit inductance required to limit di/dt

LET (Si) Fluence Range VDS Bias VGS Bias

2

(MeV/mg/cm

) (ions/cm2)(µm) (V) (V)

5

~41 160 -5

VGS = 12V

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ID = 6.0A

Post-RadiationIRHN7230, IRHN8230 Devices

Figure 1. – Typical Response of Gate Threshold Voltage

Figure 3. – Typical Response of Transconductance Vs.

Vs. Total Dose Exposure

VGS ≥ 15V

ID = 6.0A

Total Dose Exposure

Figure 2. – Typical Response of On-State Resistance

Figure 4. – Typical Response of Drain-to-Source

Vs. Total Dose Exposure

Breakdown Vs. Total Dose Exposure

Post-RadiationIRHN7230, IRHN8230 Devices

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Figure 5. – Typical Zero Gate Voltage Drain Current

Figure 7. – Typical Transient Response

of Rad Hard HEXFET During 1 x10

Vs. Total Dose Exposure

Rad (Si)/Sec Exposure

12

Figure 8a. – Gate

Stress of V

Figure 8b. – V

Equals 80% of B

GSS

12 Volts During

Radiation

Radiation

Figure 6. – Typical On-State Resistance Vs. Neutron

Equals

Stress

DSS

During

VDSS

Fluence Level

Figure 9. – High Dose Rate

(Gamma Dot) Test Circuit