International Rectifier IRHN8150, IRHN7150 Datasheet
Provisional Data Sheet No. PD-9.720A
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REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET
100 Volt, 0.055
International Rectifier’s MEGA RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation
doses as high as 1 x 10
and post-radiation test conditions, International Rectifier’s
RAD HARD HEXFETs retain identical electrical specifications up to 1 x 10
(Si) total dose, under the same pre-dose conditions, only
minor shifts in the electrical specifications are observed
and are so specified in table 1. No compensation in gate
drive circuitry is required. In addition, these devices are
capable of surviving transient ionization pulses as high
as 1 x 10
within a few microseconds. Single Event Effect (SEE)
testing of International Rectifier RAD HARD HEXFETs
has demonstrated virtual immunity to SEE failure. Since
the MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and
weapons environments.
12
Rads (Si)/Sec, and return to normal operation
®
TRANSISTOR
ΩΩ
Ω, MEGA RAD HARD HEXFET
ΩΩ
6
Rads (Si). Under identical pre-
5
Rads (Si) total dose. At 1 x 106 Rads
Absolute Maximum Ratings
Parameter IRHN7150, IRHN8150 Units
ID @ VGS = 12V , TC = 25°C Continuous Drain Current 34
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 21
I
DM
PD @ TC = 25°C Max. Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 5.5
T
J
T
STG
Pulsed Drain Current ➀ 136
Linear Derating Factor 1.2 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 500 mJ
Avalanche Current ➀ 34 A
Repetitive Avalanche Energy ➀ 15 mJ
Operating Junction -55 to 150
Storage Temperature Range
Package Mounting Surface Temperature 300
Weight 2.6 (typical) g
IRHN7150
IRHN8150
N-CHANNEL
MEGA RAD HARD
Product Summary
Part Number BVDSS RDS(on) ID
IRHN7150 100V 0.055Ω 34A
IRHN8150 100V 0.055Ω 34A
Features:
■ Radiation Hardened up to 1 x 10
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron Tolerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Surface Mount
■ Light-weight
(for 5 sec.)
6
Rads (Si)
Pre-Radiation
A
V/ns
o
C
IRHN7150, IRHN8150 Devices Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0 mA
/∆TJTemperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — 0.055 VGS = 12V, ID = 21A
On-State Resistance — 0.066 Ω VGS = 12V, ID = 34A
Gate Threshold V oltage 2.0 — 4.0 V VDS = VGS, ID = 1.0 mA
Forward Transconductance 8.0 — S ( )V
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 160 VGS =12V, ID = 34A
Gate-to-Source Charge — — 35 VDS = Max. Rating x 0.5
Gate-to-Drain (‘Miller’) Charge — — 65
Turn-On Delay Time — — 45 VDD = 50V, ID = 34A,
Rise Time — — 190 RG = 2.35Ω
Turn-Off Delay Time — — 170
Fall Time — — 130
Internal Drain Inductance — 0.8 —
Internal Source Inductance — 2.8 —
Input Capacitance — 4300 — VGS = 0V, VDS = 25V
Output Capacitance — 1200 — f = 1.0 MHz
Reverse Transfer Capacitance — 200 — (see figure 22)
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
≥ 15V, IDS = 21A ➃
DS
VGS = 0V, TJ = 125°C
(see figures 23 and 31)
(see figure 28)
Modified MOSFET
symbol showing the
internal inductances.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 34 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ➀ — — 136 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 1.9 V Tj = 25°C, IS = 34A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 570 n s Tj = 25°C, IF = 34A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 5.8 µ CV
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by L
on
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
R
thJ-PCB
Junction-to-Case — — 0.83
Junction-to-PC board — TBD — soldered to a copper-clad PC board
A
≤ 50V ➃
DD
+ LD.
S
K/W➄
IRHN7150, IRHN8150 Devices Radiation Characteristics
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Radiation Performance of Mega Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and
figure 8a and a V
bias condition equal to 80%
DSS
of the device rated voltage per note 7 and figure
8b. Pre- and post-radiation limits of the devices irradiated to 1 x 10
5
Rads (Si) are identical and are presented in Table 1, column 1, IRHN7150. Device
performance limits at a post radiation level of 1 x
6
10
Rads (Si) are presented in Table 1, column 2,
IRHN8150. The values in Table 1 will be met for either of the two low dose rate test circuits that are
used. Typical delta curves showing radiation response appear in figures 1 through 5. Typical postradiation curves appear in figures 10 through 17.
Table 1. Low Dose Rate ➅ ➆ IRHN7150 IRHN8150
100K Rads (Si) 1000K Rads (Si) Units Test Conditions ➉
min. max. min. max.
BV
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
V
SD
DSS
Parameter
Drain-to-Source Breakdown Voltage 100 — 100 —
Gate Threshold Voltage ➃ 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0 mA
Gate-to-Source Leakage Forward — 100 — 100
Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20V
Zero Gate Voltage Drain Current — 25 — 50 µAVDS = 0.8 x Max Rating, VGS = 0
Static Drain-to-Source ➃ — 0.055 — 0.075 Ω VGS = 12V, ID = 21A
On-State Resistance One
Diode Forward Voltage ➃ — 1.9 — 1.9 V TC = 25°C, IS = 34A,VGS = 0V
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10
5
Rads (Si), no change in limits are specified in DC
parameters. At a radiation level of 1 x10
6
Rads (Si),
leakage remains low and the device is usable with
no change in drive circuitry required.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec. Photocurrent and transient voltage waveforms are shown in figure 7, and the recommended
test circuit to be used is shown in figure 9.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. The effects on bulk silicon of the type used by International Rectifier on RAD HARD HEXFETs are shown
in figure 6. Single Event Effects characterization is
shown in Table 3.
V
nA
VGS = 0V, ID = 1.0 mA
VGS = +20V
Table 2. High Dose Rate ➇
Parameter Min. Typ Max. Min.Typ. Max. Units Test Conditions
V
I
di/dt — — 1000 — — 150 A/µsec Rate of rise of photo-current
L
Drain-to-Source Voltage — — 80 — — 80 V Applied drain-to-source voltage
DSS
PP
1
Table 3. Single Event Effects ➈
Parameter Typ. Units Ion
BV
DSS
100 V Ni 28 1 x 10
1011 Rads (Si)/sec 1012 Rads (Si)/sec
— 100 — — 100 — A Peak radiation induced photo-current
0.1 — — 0.5 — — µH Circuit inductance required to limit di/dt
during gamma-dot
LET (Si) Fluence Range VDS Bias VGS Bias
(MeV/mg/cm
2
) (ions/cm2)(µm) (V) (V)
5
~41 100 -5
IRHN7150, IRHN8150 Devices
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Post-Radiation
VGS = 12V
ID = 21A
Figure 1. – T ypical Response of Gate Threshold Voltage
Figure 3. – Typical Response of Transconductance
Vs. T otal Dose Exposure.
VGS ≥ 15V
ID = 21A
Vs. T otal Dose Exposure.
Figure 2. – Typical Response of On-State Resistance
Figure 4. – Typical Response of Drain-to-Source
Vs. Total Dose Exposure.
Breakdown Vs. Total Dose Exposure.
IRHN7150, IRHN8150 Devices Post-Radiation
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Figure 5. – Typical Zero Gate Voltage Drain Current
Figure 7. – T ypical Transient Response of
Rad Hard HEXFET During 1 x 10
Vs. T otal Dose Exposure.
Rad (Si)/Sec Exposure.
Figure 6. – T ypical On-State Resistance Vs.
Figure 8a – Gate Stress
of V
Volts During Radiation.
12
Figure 8b – V
Equals 80% of B
Equals 12
GSS
Stress
DSS
During Radiation.
VDSS
Neutron Fluence Level
Figure 9. – High Dose Rate (Gamma Dot)
Test Circuit
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