International Rectifier IRHM9160 Datasheet
Provisional Data Sheet No. PD-9.1415
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REPETITIVE A V ALANCHE AND dv/dt RA TED
HEXFET
-100 Volt, 0.087
International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold
voltage stability and breakdown voltage stability at
total radiation doses as high as 10
identical pre- and post-radiation test conditions, International Rectifier’s P-channel RAD HARD HEXFETs
retain identical electrical specifications up to 1 x 10
Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x
12
Rads (Si)/Sec, and return to normal operation
10
within a few microseconds. Single Event Ef fect, (SEE),
testing of International Rectifier ’s P-channel RAD
HARD HEXFETs has demonstrated virtual immunity
to SEE failure. Since the P-channel RAD HARD process utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
P-channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFET s, such as voltage control, very fast switching, ease
of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
®
TRANSISTOR
ΩΩ
Ω, RAD HARD HEXFET
ΩΩ
5
Rads (Si). Under
Product Summary
Part Number BVDSS RDS(on) ID
IRHM9160 -100V 0.087 Ω -35*A
Features:
■ Radiation Hardened up to 1 x 10
5
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron Tolerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Electrically Isolated
■ Ceramic Eyelets
Absolute Maximum Ratings
Parameter IRHM9160 Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -35*
ID @ VGS = -12V, TC = 100°C Continuous Drain Current -22
I
DM
PD @ TC = 25°C Max. Power Dissipation 250 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ -5.5
T
J
T
STG
Notes: See Page 4.
*I
current limited by pin diameter
D
Pulsed Drain Current ➀ -140
Linear Derating Factor 2.0 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 500 mJ
Avalanche Current ➀ -35 A
Repetitive Avalanche Energy ➀ 25 mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300
Weight 9.3 (typical) g
IRHM9160
P-CHANNEL
RAD HARD
5
Rads (Si)
Pre-Radiation
(0.063 in. (1.6mm) from
case for 10 sec.)
A
V/ns
o
C
IRHM9160 Device Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0 mA
/∆TJTemperature Coefficient of Breakdown — -0.13 — V/°C Reference to 25°C, ID = -1.0 mA
Voltage
Static Drain-to-Source — — 0.087 VGS = 12V, ID = -22A
On-State Resistance — — 0.10 Ω VGS = 12V, ID = -35A
Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -1.0 mA
Forward Transconductance 10 — — S ( )VDS > 15V, IDS = -22A ➃
Zero Gate Voltage Drain Current — — -25 VDS = 0.8 x Max Rating,VGS = 0V
— — -250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — -100 VGS = -20V
Gate-to-Source Leakage Reverse — — 100 VGS = +20V
Total Gate Charge — — 200 VGS =12V, ID = -35A
Gate-to-Source Charge — — 50 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 90
Turn-On Delay Time — — 70 VDD = -50V, ID = -35A,
Rise Time — — 240 RG = 2.35Ω
Turn-Off Delay Time — — 220
Fall Time — — 150
Internal Drain Inductance — 8.7 —
Internal Source Inductance — 8.7 —
Input Capacitance — 7000 — VGS = 0V, VDS = -25V
Output Capacitance — 2000 — f = 1.0 MHz
Reverse Transfer Capacitance — 500 —
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — -35 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ➀ — — -140 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — -3.3 V Tj = 25°C, IS = -35A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 775 ns Tj = 25°C, IF = -35A, di/dt ≤ -100A/µs
rr
Q
Reverse Recovery Charge — — 5.0 µCV
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
R
thJC
thJA
Junction-to-Case — — 0.50
Junction-to-Ambient — — 48
K/W➄
A
≤ -50V ➃
DD
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