International Rectifier IRHM7460SE Datasheet
Provisional Data Sheet No. PD-9.1394A
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REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSIST OR
SINGLE EVENT EFFECT (SEE) RAD HARD
500 Volt, 0.32Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 10
gate drive circuitry is required. These de vices are also
capable of surviving transient ionization pulses as high
as 1 x 10
tion within a few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits in space
and weapons environments.
5
Rads (Si) total dose. No compensation in
12
Rads (Si)/Sec, and return to normal opera-
Product Summary
Part Number BVDSS RDS(on) ID
IRHM7460SE 500V 0.32Ω 18.8A
Features:
n Radiation Hardened up to 1 x 10
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
IRHM7460SE
N-CHANNEL
5
Rads (Si)
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 18.8
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 11.9
I
DM
PD @ TC = 25°C Max. P o wer Dissipation 25 0 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Reco ve ry dv/dt 3.5
T
J
T
STG
Pre-Radiation
Parameter IRHM7460SE Units
A
Pulsed Drain Current 75.2
Linear Derating Factor 2.0 W/K
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 500 mJ
Av alanche Current 18.8 A
Repetitive Avalanche Energy 25 mJ
V/ns
Operating Junction -55 to 150
Storage T emperature Range
Lead T emperature 300
Weight 9.3 (typical) g
(0.063 in. (1.6 mm) from case for 10s)
o
C
IRHM7460SE Device Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown V oltage 500 — — V VGS = 0V, ID = 1.0 mA
/∆TJT emperature Coefficient of Breakdow n — 0.68 — V/°C Reference to 25°C, ID = 1.0 mA
V oltage
Static Drain-to-Source — — 0.32 VGS = 12V, ID =11.9A
On-State Resistance — — 0.36 Ω VGS = 12V, ID = 18.8A
Gate Threshold Voltage 2.5 — 4.5 V VDS = VGS, ID = 1.0 mA
Forward T ransconductance 3 — — S ( )VDS > 15V, IDS = 11.9A
Zero Gate V oltage Dr ain Current — — 5 0 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
T otal Gate Charge — — 26 0 VGS =12V, ID = 18.8A
Gate-to-Source Charge — — 40 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 20 0
T urn-On Dela y T ime — — 4 5 VDD = 250V, ID =18.8A,
Rise Time — — 14 0 RG = 2.35Ω
T urn-Off Delay Time — — 14 0
Fall Time — — 11 0
Internal Drain Inductance — 8.7 —
Internal Source Inductance — 8.7 —
Input Capacitance — 6400 — VGS = 0V, VDS = 25V
Output Capacitance — 1100 — f = 1.0 MHz
Reverse T ransfer Capacitance — 37 5 —
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 18.8 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) — — 75.2 integral reverse p-n junction rectifier.
SM
V
Diode Forward V oltage — — 1.8 V Tj = 25°C, IS = 18.8A, VGS = 0V
SD
t
Reverse Reco v ery Time — — 1200 ns Tj = 25°C, IF = 18.8A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 16 µCV
RR
t
Fo rward T urn-On Time
on
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
R
R
thJC
thJA
thCS
Junction-to-Case — — 0.50
Junction-to-Ambient — — 48 K/W
Case-to-Sink — 0.21 — Typical socket mount
A
≤ 50V
DD
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