International Rectifier IRHM7064, IRHM8064 Datasheet
Provisional Data Sheet No. PD-9.1564
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REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET
60 Volt, 0.021
International Rectifier’s RAD HARD technology HEXFET s
demonstrate virtual immunity to SEE failure. Additionally , under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs
retain identical electrical specifications up to 1 x 10
(Si) total dose. No compensation in gate drive circuitry is
required. These devices are also capable of surviving
transient ionization pulses as high as 1 x 10
Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier’s patented HEXFET technology , the user
can expect the highest quality and reliability in the industry .
RAD HARD HEXFET transistors also feature all of the wellestablished advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
®
TRANSISTOR
ΩΩ
Ω, MEGA RAD HARD HEXFET
ΩΩ
5
Rads
12
Rads (Si)/
Product Summary
Part Number BVDSS RDS(on) ID
IRHM7064 60V 0.021Ω 35A*
IRHM8064 60V 0.021Ω 35A*
Features:
■ Radiation Hardened up to 1 x 10
■ Single Event Burnout (SEB) Hardened
■ Single Event Gate Rupture (SEGR) Hardened
■ Gamma Dot (Flash X-Ray) Hardened
■ Neutron Tolerant
■ Identical Pre- and Post-Electrical Test Conditions
■ Repetitive Avalanche Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Electrically Isolated
■ Ceramic Eyelets
IRHM7064
IRHM8064
N-CHANNEL
MEGA RAD HARD
6
Rads (Si)
Absolute Maximum Ratings
Pre-Radiation
Parameter IRHM7064, IRHM8064 Units
ID @ VGS = 12V , TC = 25°C Continuous Drain Current 35*
ID @ VGS = 12V , TC = 100°C Continuous Drain Current 35*
I
DM
PD @ TC = 25°C Max. Power Dissipation 250 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 4.5
T
J
T
STG
Notes: See page 4 *Current is limited by pin diameter
Pulsed Drain Current ➀ 284
Linear Derating Factor 2.0 W/K ➄
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy ➁ 500 m J
Avalanche Current ➀ 35 A
Repetitive Avalanche Energy ➀ 25 m J
Operating Junction -55 to 150
Storage T emperature Range
Lead Temperature
Weight 9.3 (typical) g
300 (0.063 in (1.6mm) from case for 10 sec.)
A
V/ns
o
C
IRHM7064, IRHM8064 Devices Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
DSS
Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 1.0 mA
/∆TJTemperature Coefficient of Breakdown — 0.048 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — — 0.021 VGS = 12V , ID = 35A
On-State Resistance Ω
Gate Threshold V oltage 2.0 — 4.0 V VDS = VGS, ID = 1.0 mA
Forward Transconductance 18 — — S ( )VDS > 15V, IDS = 35A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
T otal Gate Charge — — 260 VGS =12V , ID = 35A
Gate-to-Source Charge — — 60 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 86
Turn-On Delay T ime — — 27 VDD = 30V , ID = 35A,
Rise Time — — 120 RG = 2.35Ω
Turn-Off Delay Time — — 76
Fall Time — — 93
Internal Drain Inductance — 8.7 —
Internal Source Inductance — 8.7 —
Input Capacitance — 7400 — VGS = 0V, VDS = 25V
Output Capacitance — 3200 — f = 1.0 MHz
Reverse Transfer Capacitance — 540 —
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 35 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ➀ — — 284 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 3.0 V Tj = 25°C, IS = 35A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 220 ns Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 1.1 µCV
RR
t
Forward T urn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
R
thJ-PCB
R
thCS
Junction-to-Case — — 0.50
Junction-to-PC board — — 48
Case-to-Sink — 0.21 — typical socket mount
A
≤ 50V ➃
DD
+ LD.
S
K/W➄
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