International Rectifier IRHF9130 Datasheet
Provisional Data Sheet No. PD-9.882A
Next Data SheetIndex
Previous Datasheet
To Order
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSIST OR
[REF: MIL-PRF-19500/630]
-100 Volt, 0.30
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold v oltage stability
and breakdown voltage stability at total radiation doses as
high as 10
tion test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications
up to 1 x 10
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 10
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the RAD
HARD process utilizes International Rectifier’s patented
HEXFET technology, the user can expect the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and weapons environments.
5
ΩΩ
Ω, RAD HARD HEXFET
ΩΩ
Rads (Si). Under identical pre- and post-radia-
5
Rads (Si) total dose. No compensation in gate
Product Summary
Part Number BVDSS RDS(on) ID
IRHF9130 -100V 0.30 Ω -6.5A
Features:
n Radiation Hardened up to 1 x 10
n Single Event Burnout (SEB) Hardened
12
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolera nt
n Identical Pre- and Post-Electrical Test Conditions
n Avalanche Energy Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Parameter IRHF9130 Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -6.5
ID @ VGS = -12V , TC = 100°C Continuous Drain Current -4.1
I
DM
PD @ TC = 25°C Max. Power Dissipation 25 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.5
T
J
T
STG
Pulsed Drain Current -26
Linear Derating Factor 0.2 W/K
Gate-to-Source V oltage ±20 V
Single Pulse Avalanche Energy 165 mJ
Avalanche Current -6.5 A
Repetitive Avalanche Energy 2.5 mJ
Operating Junction -55 to 150
Storage T emperature Range
Lead T emperature 300
Weight 0.98 (typical) g
(0.063 in (1.6 mm) from case for 10 sec.)
IRHF9130
JANSR2N7389
P-CHANNEL
RAD HARD
5
Rads (Si)
Pre-Radiation
A
V/ns
o
C
IRHF9130 Device Pre-Radiation
Next Data SheetIndex
Previous Datasheet
To Order
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0 mA
/∆TJTemperature Coefficient of Breakdown — -0.087 — V/°C Reference to 25°C, ID = -1.0 mA
Voltage
Static Drain-to-Source — — 0.30 VGS = 12V, ID =-4.1A
On-State Resistance — — 0.325 Ω VGS = 12V, ID = -6.5A
Gate Threshold V oltage -2.0 — -4.0 V VDS = VGS, ID = -1.0 mA
Forw ard Tr ansconductance 2.5 — — S ( )VDS ≥ -15V, IDS = -4.1A
Zero Gate Voltage Drain Current — — -25 VDS = 0.8 x Max Rating,VGS = 0V
— — -250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — -100 VGS = -20V
Gate-to-Source Leakage Reverse — — 100 VGS = 20V
Total Gate Charge — — 35 VGS =-12V, ID = -6.5A
Gate-to-Source Charge — — 10 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 25
Turn-On Delay Time — — 30 VDD = -50V, ID = -6.5A,
Rise Time — — 70 RG = 7.5Ω
Turn-Off Delay Time — — 70
Fall Time — — 70
Internal Drain Inductance — 5.0 —
Internal Source Inductance — 13 —
Input Capacitance — 1100 — VGS = 0V, VDS = -25V
Output Capacitance — 310 — f = 1.0 MHz
Reverse Transfer Capacitance — 55 —
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — -6.5 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) — — -26 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — -3.0 V Tj = 25°C, IS = -6.5A, VGS = 0V
SD
t
Reverse Recovery Time — — 250 ns Tj = 25°C, IF = -6.5A, di/dt ≤ -100A/µs
rr
Q
Reverse Recovery Charge — — 2.6 µCV
RR
t
Forward T urn-On Time
on
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled b y LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
R
thJC
thJA
Junction-to-Case — — 5.0
Junction-to-Ambient — — 175
A
≤ -50V
DD
K/W
Typical socket mount
Loading...