International Rectifier IRH9250 Datasheet
Provisional Data Sheet No. PD-9.1392
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AVALANCHE ENERGY AND dv/dt RATED
HEXFET
-200 Volt, 0.315
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold v oltage stability
and breakdown voltage stability at total radiation doses as
high as 105 Rads (Si). Under identical pre- and postradiation test conditions, International Rectifier’s P-Channel
RAD HARD HEXFETs retain identical electrical specifications
up to 1 x 105 Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capabl e
of surviving transient ionization pulses as high as 1 x 10
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of
International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the PChannel RAD HARD process utilizes International Rectifier’s
patented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and
weapons environments.
®
TRANSISTOR
ΩΩ
Ω, RAD HARD HEXFET
ΩΩ
IRH9250
P-CHANNEL
RAD HARD
Product Summary
Part Number BV
DSS
IRH9250 -200V 0.315Ω -14A
Features:
n Radiation Hardened up to 1 x 10
12
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron T olerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
R
DS(on)
5
Rads (Si)
I
D
Absolute Maximum Ratings
Parameter IRH9250 Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -14
ID @ VGS = -12V , TC = 100°C Continuous Drain Current -9
I
DM
PD @ TC = 25°C Max. Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.5
T
J
T
STG
Notes: See page 4
Pulsed Drain Current -56
Linear Derating Factor 1.2 W/K
Gate-to-Source V oltage ±20 V
Single Pulse Avalanche Energy 500 mJ
Avalanche Current -14 A
Repetitive Avalanche Energy 15 mJ
Operating Junction -55 to 150
Storage T emperature Range
Lead Temperature 300 (0.063 in. (1 .6mm) from case for 10s)
Weight 11.5 (typical) g
Pre-Radiation
A
V/ns
o
C
IRH9250 Device Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage -200 — — V VGS = 0V, ID = -1.0 mA
/∆TJTemperature Coefficient of Breakdown — -0.10 — V/°C Reference to 25°C, ID = -1.0 mA
Voltage
Static Drain-to-Source — — 0.315 VGS = -12V, ID = -9A
On-State Resistance — — 0.33 Ω VGS = -12V, ID = -14A
Gate Threshold V oltage -2.0 — -4.0 V VDS = VGS, ID = -1.0 mA
Forw ard Tr ansconductance 4.0 — — S ( )VDS > -15V, IDS = -9A
Zero Gate Voltage Drain Current — — -25 VDS = 0.8 x Max. Rating,VGS = 0V
— — -250 VDS = 0.8 x Max. Rating
Gate-to-Source Leakage Forward — — -100 VGS = - 20V
Gate-to-Source Leakage Reverse — — 100 VGS = 20V
Total Gate Charge — — 200 VGS = -12V, ID = -14A
Gate-to-Source Charge — — 45 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 85
Turn-On Delay Time — — 60 VDD = -50V, ID = -14A, RG = 2.35Ω
Rise Time — — 240
Turn-Off Delay Time — — 225
Fall Time — — 175
Internal Drain Inductance — 8.7 —
Internal Source Inductance — 8.7 —
Input Capacitance — 1100 — VGS = 0V, VDS = -25V
Output Capacitance — 310 — f = 1.0 MHz
Reverse T ransfer Capacitance — 55 —
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current — — -14 Modified MOSFET symbol
S
(Body Diode)
I
Pulse Source Current — — -56
SM
(Body Diode) ➀
V
Diode Forward Voltage — — -3.6 V Tj = 25°C, IS = -14A, VGS = 0V
SD
t
Reverse Recovery Time — — 740 ns Tj = 25°C, IF = -14A, di/dt ≤ -100 A/µs
rr
Q
Reverse Recovery Charge — — 7.0 µCV
RR
t
Forward T urn-On Time
on
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
thJC
R
thJA
RthCS Case-to-Sink — 0.12 — Typical socket mount
Junction-to-Case — — 0.83
Junction-to-Ambient — — 30
Notes: See page 4
showing the integral Re verse
p-n junction rectifier.
A
≤ -14V
DD
K/W
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