International Rectifier IRH7450SE Datasheet
Provisional Data Sheet No. PD 9.1390
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REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSIST OR
SINGLE EVENT EFFECT (SEE) RAD HARD
500 Volt, 0.51
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 10
gate drive circuitry is required. These de vices are also
capable of surviving transient ionization pulses as high
as 1 x 10
tion within a few microseconds. Since the (SEE) process utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
ΩΩ
Ω, (SEE) RAD HARD HEXFET
ΩΩ
5
Rads (Si) total dose. No compensation in
12
Rads (Si)/Sec, and return to normal opera-
Absolute Maximum Ratings
Parameter IRH7450SE Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 11
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 7.0
I
DM
PD @ TC = 25°C Max. Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 3.5
T
J
T
STG
Pulsed Drain Current 44
Linear Derating Factor 1.2 W/K
Gate-to-Source V oltage ±20 V
Single Pulse Avalanche Energy 500 mJ
Avalanche Current 11 A
Repetitive Avalanche Energy 15 mJ
Operating Junction -55 to 150
Storage T emperature Range
Lead T emperature 300
Weight 11.5 (typical) g
IRH7450SE
N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRH7450SE 500V 0.51Ω 11A
Features:
n Radiation Hardened up to 1 x 10
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
(0.0063 in. (1.6mm) from case for 10 sec.)
5
Rads (Si)
Pre-Radiation
A
V/ns
o
C
IRH7450SE Device Pre-Radiation
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0 mA
/∆TJTemperature Coefficient of Breakdown — 0.6 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — — 0.51 VGS = 12V, ID =7.0A
On-State Resistance — — 0.57 Ω VGS = 12V, ID = 11A
Gate Threshold Voltage 2.5 — 4.5 V VDS = VGS, ID = 1.0 mA
Forw ard Tr ansconductance 3 — — S ( )VDS > 15V, IDS = 7.0A
Zero Gate Voltage Drain Current — — 50 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 180 VGS =12V, ID = 11A
Gate-to-Source Charge — — 45 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge — — 105
Tur n-On Delay Time — — 45 VDD = 250V, ID =11A,
Rise Time — — 190 RG = 2.35Ω
Turn-Off Delay Time — — 190
Fall Time — — 130
Internal Drain Inductance — 8.7 —
Internal Source Inductance — 8.7 —
Input Capacitance — 4000 — VGS = 0V, VDS = 25V
Output Capacitance — 330 — f = 1.0 MHz
Reverse T ransfer Capacitance — 52 —
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 11 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) —— 44 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 1.6 V Tj = 25°C, IS = 11A, VGS = 0V
SD
t
Reverse Recovery Time — — 1100 ns Tj = 25°C, IF =11 A, di/dt ≤ 100A/µs
rr
QRRReverse Recovery Charge — — 16 µCV
t
Forward T urn-On Time
on
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
R
R
thJC
thJA
thCS
Junction-to-Case — — 0.83
Junction-to-Ambient — — 30 K/W
Case-to-Sink — 0.12 — Typical Socket Mount
A
≤ 50V
DD
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