International Rectifier IRGPH40MD2 Datasheet
Preliminary Data Sheet PD - 9.1118
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IRGPH40MD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
Short Circuit Rated
Fast CoPack IGBT
DIODE
Features
• Short circuit rated -10µs @125°C, V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to
10kHz)
GE
= 15V
G
C
V
= 1200V
CES
V
CE(sat)
≤ 3.4V
@VGE = 15V, IC = 18A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 31
IC @ TC = 100°C Continuous Collector Current 18
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 8.0
I
FM
t
sc
V
GE
PD @ TC = 25°C Maximum Power Dissipation 160 W
PD @ TC = 100°C Maximum Power Dissipation 65
T
J
T
STG
Collector-to-Emitter Voltage 1200 V
Pulsed Collector Current 62 A
Clamped Inductive Load Current 62
Diode Maximum Forward Current 62
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
TO-247AC
Thermal Resistance
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight — 6 (0.21) — g (oz)
Parameter Min. Typ. Max. Units
Junction-to-Case - IGBT — — 0.77
Junction-to-Case - Diode — — 1.7 °C/W
Case-to-Sink, flat, greased surface — 0.24 —
Junction-to-Ambient, typical socket mount — — 40
Revision 2
C-479
IRGPH40MD2
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Qge Gate - Emitter Charge (turn-on) — 11 21 nC VCC = 400V
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Notes:
Refer to Section D - page D-13 for Package Outline 3 - JEDEC Outline TO-247AC
Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
/∆T
Temp. Coeff. of Breakdown Voltage — 1.1 — V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 2.3 3.4 IC = 18A VGE = 15V
— 3.0 — V IC = 31A
— 2.8 — IC = 18A, TJ = 150°C
Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
/∆TJTemp. Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 4.0 10 — S VCE = 100V, IC = 18A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 1200V
— — 3500 VGE = 0V, VCE = 1200V, TJ = 150°C
Diode Forward Voltage Drop — 2.6 3.3 V IC = 8A
— 2.3 3.0 IC = 8A, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Total Gate Charge (turn-on) — 50 75 IC = 18A
Gate - Collector Charge (turn-on) — 15 30
Turn-On Delay Time — 67 — TJ = 25°C
Rise Time — 89 — ns IC = 18A, VCC =800V
Turn-Off Delay Time — 340 930 VGE = 15V, RG = 10Ω
Fall Time — 510 930 Energy losses include "tail" and
Turn-On Switching Loss — 2.1 — diode reverse recovery.
Turn-Off Switching Loss — 5.9 — mJ
Total Switching Loss — 8.0 13
Short Circuit Withstand Time 10 — — µs VCC = 720V, TJ = 125°C
VGE = 15V, RG = 10Ω, V
Turn-On Delay Time — 64 — TJ = 150°C,
Rise Time — 74 — ns IC = 18A, VCC = 800V
Turn-Off Delay Time — 550 — VGE = 15V, RG = 10Ω
Fall Time — 1200 — Energy losses include "tail" and
Total Switching Loss — 16 — mJ diode reverse recovery.
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 1400 — VGE = 0V
Output Capacitance — 100 — pF VCC = 30V
Reverse Transfer Capacitance — 15 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 63 95 ns TJ = 25°C
— 106 160 TJ = 125°C IF = 8A
Diode Peak Reverse Recovery Current — 4.5 8.0 A TJ = 25°C
— 6.2 11 TJ = 125°C VR = 200V
Diode Reverse Recovery Charge — 140 380 nC TJ = 25°C
— 335 880 TJ = 125°C di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 133 — A/µs TJ = 25°C
During t
b
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
— 85 — TJ = 125°C
VCC=80%(V
), VGE=20V, L=10µH,
CES
RG= 10Ω
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
< 1000V
CPK
Pulse width 5.0µs,
single shot.
C-480
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