International Rectifier IRGPH40FD2 Datasheet

PD - 9.1117

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IRGPH40FD2

INSULATED GATE BIPOLAR TRANSISTOR

Fast CoPack IGBT
WITH ULTRAFAST SOFT RECOVERY
DIODE

Features

• Switching-loss rating includes all "tail" losses

• HEXFREDTM soft ultrafast diodes

• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve

G

C

V

= 1200V

CES

V

CE(sat)

≤ 3.3V

@VGE = 15V, IC = 17A

E

n-chan n el

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.

O-247AC

T

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 29
IC @ TC = 100°C Continuous Collector Current 17
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 8.0
I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 160 W
PD @ TC = 100°C Maximum Power Dissipation 65
T

J

T

STG

Collector-to-Emitter Voltage 1200 V

Pulsed Collector Current 58 A
Clamped Inductive Load Current 58

Diode Maximum Forward Current 130
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight — 6 (0.21) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case - IGBT — — 0.77
Junction-to-Case - Diode — — 1.7 °C/W
Case-to-Sink, flat, greased surface — 0.24 —
Junction-to-Ambient, typical socket mount — — 40

C-285

Revision 1

IRGPH40FD2

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 20 )

Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage — 1.3 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.5 3.3 IC = 17A VGE = 15V

— 3.2 — V IC = 29A See Fig. 2, 5
— 3.0 — IC = 17A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 5.0 11 — S VCE = 100V, IC = 17A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 1200V

— — 1000 VGE = 0V, VCE = 1200V, TJ = 150°C

Diode Forward Voltage Drop — 2.6 3.3 V IC = 8.0A See Fig. 13

— 2.3 3.0 IC = 8.0A, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 45 67 IC = 17A
Gate - Emitter Charge (turn-on) — 11 16 nC VCC = 400V
Gate - Collector Charge (turn-on) — 17 26 See Fig. 8
Turn-On Delay Time — 70 — TJ = 25°C
Rise Time — 58 — ns IC = 17A, VCC = 800V
Turn-Off Delay Time — 320 550 VGE = 15V, RG = 10Ω
Fall Time — 370 630 Energy losses include "tail" and
Turn-On Switching Loss — 2.6 — diode reverse recovery.
Turn-Off Switching Loss — 5.4 — mJ See Fig. 9, 10, 11, 18
Total Switching Loss — 8.0 15
Turn-On Delay Time — 70 — TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time — 54 — ns IC = 17A, VCC = 800V
Turn-Off Delay Time — 670 — VGE = 15V, RG = 10Ω
Fall Time — 930 — Energy losses include "tail" and
Total Switching Loss — 15 — mJ diode reverse recovery.
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 1200 — VGE = 0V
Output Capacitance — 75 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 15 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 63 95 ns TJ = 25°C See Fig.

— 106 160 TJ = 125°C 14 IF = 8.0A

Diode Peak Reverse Recovery Current — 4.5 8.0 A TJ = 25°C See Fig.

— 6.2 11 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 140 380 nC TJ = 25°C See Fig.

— 335 880 TJ = 125°C 16 di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery — 133 — A/µs TJ = 25°C See Fig.

During t

b

— 85 — TJ = 125°C 17

VCC=80%(V

), VGE=20V, L=10µH,

CES

RG= 10Ω, ( See fig. 19 )

Pulse width 5.0µs,

single shot.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-286

IRGPH40FD2

A

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltag e (V)

C

I , C ollector-to-Emitte r C urrent (A)

,

GE

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25

Duty cyc le : 50%
T = 125°C

J

T = 9 0°C

20

15

60% o f ra ted
volta g e

10

Load Current (A)

5

0

0.1 1 10 100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

sink

Gate drive as specified
Turn- on l o sses include
effects of reve rse recovery

Power Dissipation = 35W

100

T = 25°C

J

T = 150°C

J

10

V = 15V

G E

1

1 10

V

20µs P ULSE WIDTH

itt

Fig. 2 - Typical Output Characteristics

C-287

1000

100

T = 150°C

J

10

T = 25°C

J

1

0.1

V = 1 00V

CC

0.0 1
5 10 15 20

V

Gate-to-Em itter Voltage (V)

5µs PU LSE W IDTH

Fig. 3 - Typical Transfer Characteristics