International Rectifier IRGPC50MD2 Datasheet

PD - 9.1145A

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IRGPC50MD2

INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY

Short Circuit Rated

Fast CoPack IGBT

DIODE

Features

• Short circuit rated -10µs @125°C, V

• Switching-loss rating includes all "tail" losses

• HEXFREDTM soft ultrafast diodes

• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve

GE

= 15V

G

C

V

= 600V

CES

V

CE(sat)

≤ 2.0V

@VGE = 15V, IC = 35A

E

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.

These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.

TO-247AC

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 60
IC @ TC = 100°C Continuous Collector Current 35
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 25
I

FM

t

sc

V

GE

PD @ TC = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 78
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 120 A
Clamped Inductive Load Current 120

Diode Maximum Forward Current 120
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight — 6 (0.21) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case - IGBT — — 0.64
Junction-to-Case - Diode — — 0.83 °C/W
Case-to-Sink, flat, greased surface — 0.24 —
Junction-to-Ambient, typical socket mount — — 40

Revision 2

C-399

IRGPC50MD2

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

sc

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

Notes:

Repetitive rating; VGE=20V, pulse width limited

by max. junction temperature. ( See fig. 20 )

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA

/∆T

Temp. Coeff. of Breakdown Voltage — 0.62 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.8 2.0 IC = 35A VGE = 15V

— 2.3 — V IC = 60A See Fig. 2, 5
— 2.0 — IC = 35A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 11 20 — S VCE = 100V, IC = 35A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 6500 VGE = 0V, VCE = 600V, TJ = 150°C

Diode Forward Voltage Drop — 1.3 1.7 V IC = 25A See Fig. 13

— 1.2 1.5 IC = 25A, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 120 180 IC = 35A
Gate - Emitter Charge (turn-on) — 25 38 nC VCC = 400V
Gate - Collector Charge (turn-on) — 40 60 See Fig. 8
Turn-On Delay Time — 78 — TJ = 25°C
Rise Time — 110 — ns IC = 35A, VCC = 480V
Turn-Off Delay Time — 340 510 VGE = 15V, RG = 5.0Ω
Fall Time — 265 400 Energy losses include "tail" and
Turn-On Switching Loss — 2.1 — diode reverse recovery.
Turn-Off Switching Loss — 4.0 — mJ See Fig. 9, 10, 11, 18
Total Switching Loss — 6.1 9.5
Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C

VGE = 15V, RG = 5.0Ω, V
Turn-On Delay Time — 80 — TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time — 110 — ns IC = 35A, VCC = 480V
Turn-Off Delay Time — 610 — VGE = 15V, RG = 5.0Ω
Fall Time — 440 — Energy losses include "tail" and
Total Switching Loss — 9.4 — mJ diode reverse recovery.
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 2900 — VGE = 0V
Output Capacitance — 230 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 30 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 50 75 ns TJ = 25°C See Fig.

— 105 160 TJ = 125°C 14 IF = 25A

Diode Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C See Fig.

— 8.0 15 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C See Fig.

— 420 1200 TJ = 125°C 16 di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs TJ = 25°C See Fig.

During t

b

— 160 — TJ = 125°C 17

VCC=80%(V

), VGE=20V, L=10µH,

CES

RG= 5.0Ω, ( See fig. 19 )

Pulse width 5.0µs,

single shot.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

CPK

< 500V

C-400

IRGPC50MD2

f, Frequency (kHz)

C

I , Collector-to-Emitte r Current (A)

, Gate-to-Em

er Voltage (V)

GE

CE

C

I , Collector-to-E mitter Current (A)

, Collector-to-Em

er Voltage (V)

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40

30

20

10

0

0.1 1 10 100

Duty cycle: 50%
T = 125°C

J

T = 90°C

sink

Gate drive a s specifie d
Tu rn-on losses include
effects of reverse rec overy
Po w er Diss ipa tion = 40W

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

1000

of fundamental)

RMS

1000

100

10

1

0.1 1 1 0

V

Fig. 2 - Typical Output Characteristics

25°C

150°C

V = 15V

GE

20µs P UL SE W IDTH

itt

C-401

100

150°C

10

1

5 10 15 2 0

25°C

V = 100V

CC

5µs PU LS E WID TH

V

itt

Fig. 3 - Typical Transfer Characteristics