International Rectifier IRGPC50FD2 Datasheet

PD - 9.800

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IRGPC50FD2

INSULATED GATE BIPOLAR TRANSISTOR

Fast CoPack IGBT
WITH ULTRAFAST SOFT RECOVERY
DIODE

Features

• Switching-loss rating includes all "tail" losses

• HEXFREDTM soft ultrafast diodes

• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve

G

C

V

= 600V

CES

V

CE(sat)

≤ 1.7V

@VGE = 15V, IC = 39A

E

n-chan ne l

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.

O-247AC

T

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 70
IC @ TC = 100°C Continuous Collector Current 39
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 25
I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 78
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 280 A
Clamped Inductive Load Current 280

Diode Maximum Forward Current 280
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight — 6 (0.21) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case - IGBT — — 0.64
Junction-to-Case - Diode — — 0.83 °C/W
Case-to-Sink, flat, greased surface — 0.24 —
Junction-to-Ambient, typical socket mount — — 40

C-125

Revision 1

IRGPC50FD2

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 20 )

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA

/∆T

Temp. Coeff. of Breakdown Voltage — 0.62 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.6 1.7 IC = 39A VGE = 15V

— 2.0 — V IC = 70A See Fig. 2, 5
— 1.7 — IC = 39A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -14 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 21 24 — S VCE = 100V, IC = 39A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 6500 VGE = 0V, VCE = 600V, TJ = 150°C

Diode Forward Voltage Drop — 1.3 1.7 V IC = 25A See Fig. 13

— 1.2 1.5 IC = 25A, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 110 170 IC = 39A
Gate - Emitter Charge (turn-on) — 20 30 nC VCC = 400V
Gate - Collector Charge (turn-on) — 50 75 See Fig. 8
Turn-On Delay Time — 70 — TJ = 25°C
Rise Time — 110 — ns IC = 39A, VCC = 480V
Turn-Off Delay Time — 400 600 VGE = 15V, RG = 5.0Ω
Fall Time — 290 400 Energy losses include "tail" and
Turn-On Switching Loss — 2.5 — diode reverse recovery.
Turn-Off Switching Loss — 6.0 — mJ See Fig. 9, 10, 11, 18
Total Switching Loss — 8.5 13
Turn-On Delay Time — 68 — TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time — 100 — ns IC = 39A, VCC = 480V
Turn-Off Delay Time — 760 — VGE = 15V, RG = 5.0Ω
Fall Time — 520 — Energy losses include "tail" and
Total Switching Loss — 14 — mJ diode reverse recovery.
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 3000 — VGE = 0V
Output Capacitance — 340 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 40 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 50 75 ns TJ = 25°C See Fig.

— 105 160 TJ = 125°C 14 IF = 25A

Diode Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C See Fig.

— 8.0 15 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C See Fig.

— 420 1200 TJ = 125°C 16 di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs TJ = 25°C See Fig.

During t

b

— 160 — TJ = 125°C 17

VCC=80%(V

), VGE=20V, L=10µH,

CES

RG= 5.0Ω, ( See fig. 19 )

Pulse width 5.0µs,

single shot.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-126

IRGPC50FD2

A

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltage (V)

C

I , Collector-to-Emitter Current (A )

,

GE

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30

D u ty c ycle : 5 0 %
T = 12 5° C

J

25

20

T = 90 °C

sink

G a te d r ive a s sp e cifie d
Tu rn -o n los s es in clud e
effe cts o f re v erse re c ove ry

P o w e r D is s ip a tio n = 4 0W

15

10

Load Current (A)

5

0

0.1 1 10 100

60% of rat e d
v olta ge

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

1000

100

(Load Current = I

T = 25°C

J

T = 150°C

J

of fundamental)

RMS

1000

100

T = 25°C

J

T = 150°C

J

10

1

0.1 1 1 0

V

Fig. 2 - Typical Output Characteristics

V = 15V

G E

20µs P ULSE WIDTH

itt

C-127

10

V = 1 00V

CC

1

5 10 1 5 20

V

Gate-to-Emitter Voltage (V)

5µs PUL SE W IDTH

Fig. 3 - Typical Transfer Characteristics