International Rectifier IRGPC30FD2 Datasheet
PD - 9.1040
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IRGPC30FD2
INSULATED GATE BIPOLAR TRANSISTOR
Fast CoPack IGBT
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
G
C
V
= 600V
CES
V
CE(sat)
≤ 2.1V
@VGE = 15V, IC = 17A
E
n-chan ne l
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
O-247AC
T
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 31
IC @ TC = 100°C Continuous Collector Current 17
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 12
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 120 A
Clamped Inductive Load Current 120
Diode Maximum Forward Current 120
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight — 6 (0.21) — g (oz)
Parameter Min. Typ. Max. Units
Junction-to-Case - IGBT — — 1.2
Junction-to-Case - Diode — — 2.5 °C/W
Case-to-Sink, flat, greased surface — 0.24 —
Junction-to-Ambient, typical socket mount — — 40
Revision 1
C-109
IRGPC30FD2
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
/∆T
Temp. Coeff. of Breakdown Voltage — 0.69 — V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 1.8 2.1 IC = 17A VGE = 15V
— 2.4 — V IC = 31A See Fig. 2, 5
— 2.2 — IC = 17A, TJ = 150°C
Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
/∆TJTemp. Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 6.1 10 — S VCE = 100V, IC = 17A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 2500 VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop — 1.4 1.7 V IC = 12A See Fig. 13
— 1.3 1.6 IC = 12A, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Total Gate Charge (turn-on) — 27 30 IC = 17A
Gate - Emitter Charge (turn-on) — 4.1 5.9 nC VCC = 400V
Gate - Collector Charge (turn-on) — 12 15 See Fig. 8
Turn-On Delay Time — 72 — TJ = 25°C
Rise Time — 75 — ns IC = 17A, VCC = 480V
Turn-Off Delay Time — 300 450 VGE = 15V, RG = 23Ω
Fall Time — 220 350 Energy losses include "tail" and
Turn-On Switching Loss — 0.9 — diode reverse recovery.
Turn-Off Switching Loss — 2.1 — mJ See Fig. 9, 10, 11, 18
Total Switching Loss — 3.0 4.6
Turn-On Delay Time — 70 — TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time — 75 — ns IC = 17A, VCC = 480V
Turn-Off Delay Time — 420 — VGE = 15V, RG = 23Ω
Fall Time — 480 — Energy losses include "tail" and
Total Switching Loss — 4.7 — mJ diode reverse recovery.
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 670 — VGE = 0V
Output Capacitance — 100 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 10 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig.
— 80 120 TJ = 125°C 14 IF = 12A
Diode Peak Reverse Recovery Current — 3.5 6.0 A TJ = 25°C See Fig.
— 5.6 10 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig.
— 220 600 TJ = 125°C 16 di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs TJ = 25°C See Fig.
During t
b
— 120 — TJ = 125°C 17
VCC=80%(V
), VGE=20V, L=10µH,
CES
RG= 23Ω, ( See fig. 19 )
Pulse width 5.0µs,
single shot.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-110
IRGPC30FD2
A
CE
C
I , Collector-to-Emitter Current (A)
, Collector-to-Em
er Voltage (V)
C
I , Collector-to-Emitter Current (A)
,
GE
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20
Du ty cycle: 5 0 %
T = 1 25 °C
J
T = 9 0 °C
16
12
60% of r a te d
volta ge
8
Load Current (A)
4
0
0.1 1 10 100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
sink
Ga te d rive as specifi ed
Turn -on lo sses include
effects o f re verse recove ry
Po we r D issipatio n = 24W
1000
T = 25°C
100
10
1
1 10
V
J
T = 150°C
J
V = 15V
G E
20µs P ULSE WIDTH
itt
Fig. 2 - Typical Output Characteristics
C-111
1000
100
T = 150°C
J
10
T = 25°C
J
1
V = 100V
CC
0.1
5 10 15 2 0
V
Gate-to -Emitter Voltage (V)
5µs P ULSE W ID TH
Fig. 3 - Typical Transfer Characteristics
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