International Rectifier IRGPC20MD2 Datasheet

PD - 9.1144

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IRGPC20MD2

INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY

Short Circuit Rated

Fast CoPack IGBT

DIODE

Features

• Short circuit rated -10µs @125°C, V

• Switching-loss rating includes all "tail" losses

• HEXFREDTM soft ultrafast diodes

• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve

GE

= 15V

G

C

V

= 600V

CES

V

CE(sat)

≤ 2.5V

@VGE = 15V, IC = 8.0A

E

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.

These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.

TO-247AC

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 13
IC @ TC = 100°C Continuous Collector Current 8.0
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 7.0
I

FM

t

sc

V

GE

PD @ TC = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C Maximum Power Dissipation 24
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 26 A
Clamped Inductive Load Current 26

Diode Maximum Forward Current 60
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight — 6 (0.21) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case - IGBT — — 2.1
Junction-to-Case - Diode — — 3.5 °C/W
Case-to-Sink, flat, greased surface — 0.24 —
Junction-to-Ambient, typical socket mount — — 40

Revision 2

C-381

IRGPC20MD2

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Qge Gate - Emitter Charge (turn-on) — 3.6 5.2 nC VCC = 400V
Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

sc

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

Notes:

Repetitive rating; VGE=20V, pulse width limited

by max. junction temperature. ( See fig. 20 )

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA

/∆T

Temp. Coeff. of Breakdown Voltage — 0.42 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.0 2.5 IC = 8.0A VGE = 15V

— 2.7 — V IC = 13A See Fig. 2, 5
— 2.5 — IC = 8.0A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 2.7 3.8 — S VCE = 100V, IC = 8.0A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 1700 VGE = 0V, VCE = 600V, TJ = 150°C

Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13

— 1.4 1.7 IC = 8.0A, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 16 24 IC = 8.0A

Gate - Collector Charge (turn-on) — 6.0 9.0 See Fig. 8
Turn-On Delay Time — 66 — TJ = 25°C
Rise Time — 40 — ns IC = 8.0A, VCC = 480V
Turn-Off Delay Time — 330 540 VGE = 15V, RG = 50Ω
Fall Time — 260 480 Energy losses include "tail" and
Turn-On Switching Loss — 0.5 — diode reverse recovery.
Turn-Off Switching Loss — 1.0 — mJ See Fig. 9, 10, 11, 18
Total Switching Loss — 1.5 2.5
Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C

VGE = 15V, RG = 50Ω, V
Turn-On Delay Time — 65 — TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time — 46 — ns IC = 8.0A, VCC = 480V
Turn-Off Delay Time — 520 — VGE = 15V, RG = 50Ω
Fall Time — 560 — Energy losses include "tail" and
Total Switching Loss — 2.3 — mJ diode reverse recovery.
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 365 — VGE = 0V
Output Capacitance — 47 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 4.8 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.

— 55 90 TJ = 125°C 14 IF = 8.0A

Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig.

— 4.5 8.0 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.

— 124 360 TJ = 125°C 16 di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.

During t

b

— 210 — TJ = 125°C 17
VCC=80%(V

), VGE=20V, L=10µH,

CES

RG= 50Ω, ( See fig. 19 )

Pulse width 5.0µs,

single shot.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

CPK

< 500V

C-382

IRGPC20MD2

A

A

A

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10

Duty cycle: 5 0 %
T = 12 5°C

J

T = 9 0 °C

8

6

60% of r a ted
v olta ge

4

Load Current (A)

2

0

0.1 1 10 100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

sink

Gate drive as specifie d
Turn-on losses include
effect s of reverse recove ry
Po wer D issipation = 15W

100

T = 25°C

J

T = 150°C

J

10

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE

20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

C-383

100

T = 150°C

J

10

T = 25°C

J

C

I , Collector-to-Emitter Current (A)

1

5 10 15 20

V , Gate-to-Emitter Voltage (V)

GE

V = 100V

CC

5µs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics