International Rectifier IRGP450UD2 Datasheet
Preliminary Data Sheet PD - 9.1065
Next Data SheetIndex
Previous Datasheet
To Order
IRGP450UD2
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast CoPack IGBT
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
G
C
V
= 500V
CES
V
CE(sat)
≤ 3.2V
@VGE = 15V, IC = 33A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
O-247AC
T
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 59
IC @ TC = 100°C Continuous Collector Current 33
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 29
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 78
T
J
T
STG
Collector-to-Emitter Voltage 500 V
Pulsed Collector Current 120 A
Clamped Inductive Load Current 120
Diode Maximum Forward Current 120
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight — 6 (0.21) — g (oz)
Parameter Min. Typ. Max. Units
Junction-to-Case - IGBT — — 0.64
Junction-to-Case - Diode — — 0.83 °C/W
Case-to-Sink, flat, greased surface — 0.24 —
Junction-to-Ambient, typical socket mount — — 40
Revision 1
C-649
IRGP450UD2
Next Data SheetIndex
Previous Datasheet
To Order
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Notes:
Collector-to-Emitter Breakdown Voltage 500 — — V VGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage — 0.41 — V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 2.1 3.2 IC = 33A VGE = 15V
— 2.6 — V IC = 59A
— 2.1 — IC = 33A, TJ = 150°C
Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -10 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 7.0 22 — S VCE = 100V, IC = 33A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 500V
— — 6500 VGE = 0V, VCE = 500V, TJ = 150°C
Diode Forward Voltage Drop — 1.3 1.7 V IC = 25A
— 1.2 1.5 IC = 25A, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Total Gate Charge (turn-on) — 120 180 IC = 33A
Gate - Emitter Charge (turn-on) — 22 33 nC VCC = 400V
Gate - Collector Charge (turn-on) — 41 62
Turn-On Delay Time — 33 — TJ = 25°C
Rise Time — 26 — ns IC = 33A, VCC = 400V
Turn-Off Delay Time — 110 170 VGE = 15V, RG = 5.0Ω
Fall Time — 91 140 Energy losses include "tail" and
Turn-On Switching Loss — 0.91 — diode reverse recovery.
Turn-Off Switching Loss — 0.25 — mJ
Total Switching Loss — 1.2 1.7
Turn-On Delay Time — 37 — TJ = 150°C,
Rise Time — 29 — ns IC = 33A, VCC = 400V
Turn-Off Delay Time — 160 — VGE = 15V, RG = 5.0Ω
Fall Time — 110 — Energy losses include "tail" and
Total Switching Loss — 1.8 — mJ diode reverse recovery.
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 2700 — VGE = 0V
Output Capacitance — 280 — pF VCC = 30V
Reverse Transfer Capacitance — 34 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 50 75 ns TJ = 25°C
— 105 160 TJ = 125°C IF = 25A
Diode Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C
— 8.0 15 TJ = 125°C VR = 200V
Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C
— 420 1200 TJ = 125°C di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs TJ = 25°C
During t
b
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
— 160 — TJ = 125°C
VCC=80%(V
), VGE=20V, L=10µH,
CES
RG= 5.0Ω, ( See fig. 19 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs,
single shot.
Refer to Section D - page D-13 for Package Outline 3 - JEDEC Outline TO-247AC
C-650
Loading...