International Rectifier IRGBC20U Datasheet
PD - 9.681A
TO-220AB
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IRGBC20U
UltraFast IGBTINSULATED GATE BIPOLAR TRANSISTOR
Features
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
C
V
= 600V
CES
See Fig. 1 for Current vs. Frequency curve
G
V
E
@VGE = 15V, IC = 6.5A
CE(sat)
≤ 3.0V
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 13
IC @ TC = 100°C Continuous Collector Current 6.5 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C Maximum Power Dissipation 24
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 52
Clamped Inductive Load Current 52
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 5 mJ
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
R
θJC
R
θCS
R
θJA
Wt Weight — 2.0 (0.07) — g (oz)
Parameter Min. Typ. Max. Units
Junction-to-Case — — 2.1
Case-to-Sink, flat, greased surface — 0.50 — °C/W
Junction-to-Ambient, typical socket mount — — 80
Revision 0
C-651
IRGBC20U
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.69 — V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 2.2 3.0 IC = 6.5A VGE = 15V
— 2.8 — V IC = 13A See Fig. 2, 5
— 2.5 — IC = 6.5A, TJ = 150°C
Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 1.4 4.3 — S VCE = 100V, IC = 6.5A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Total Gate Charge (turn-on) — 16 22 IC = 6.5A
Gate - Emitter Charge (turn-on) — 2.5 3.8 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 7.8 13 VGE = 15V
Turn-On Delay Time — 22 — TJ = 25°C
Rise Time — 12 — ns IC = 6.5A, VCC = 480V
Turn-Off Delay Time — 71 95 VGE = 15V, RG = 50Ω
Fall Time — 91 280 Energy losses include "tail"
Turn-On Switching Loss — 0.11 —
Turn-Off Switching Loss — 0.14 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 0.25 0.50
Turn-On Delay Time — 23 — TJ = 150°C,
Rise Time — 13 — ns IC = 6.5A, VCC = 480V
Turn-Off Delay Time — 140 — VGE = 15V, RG = 50Ω
Fall Time — 200 — Energy losses include "tail"
Total Switching Loss — 0.45 — mJ See Fig. 10, 14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 330 — VGE = 0V
Output Capacitance — 65 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 6.0 — ƒ = 1.0MHz
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
VCC=80%(V
RG= 50Ω, ( See fig. 13a )
), VGE=20V, L=10µH,
CES
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-652
Pulse width 5.0µs,
single shot.
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