Datasheet IRGBC20SD2 Datasheet (International Rectifier)

PD-9.1544

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PROVISIONAL

INSULATED GATE BIPOLAR TRANSISTOR WITH

IRGBC20SD2

Standard Speed CoPack

ULTRAFAST SOFT RECOVERY DIODE

C

Features

• Switching-loss rating includes all 'tail' losses

• HEXFRED

• Optimized for line frequency operation (to 400HZ)

TM

soft ultrafast diodes

Description

Co-packaged IGBTs are a natural extension of

G

E

n-channel

V

CES

V

CE(

@VGE = 15V, IC = 10A

International Rectifier's well-known IGBT line. They
provide the convenience of an IBGT and an ultrafast
recovery diode in one package, resulting in
substantial benefits to a host of high-voltage, high­current, motor control, UPS and power supply
applications.

TO-220AB

Absolute Maximum Ratings

Parameter Max. Units

V

CES

@ TC = 25°C Continuous Collector Current 19

I

C

IC @ TC = 100°C Continuous Collector Current 10
I

CM

I

LM

@ TC = 100°C Diode Continuous Forward Current 7.0

I

F

I

FM

V

GE

@ TC = 25°C Maximum Power Dissipation 60 W

P

D

PD @ TC = 100°C Maximum Power Dissipation 24
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current  76 A
Clamped Inductive Load Current  38

Diode Maximum Forward Current 32
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight ------ 2 (0.07) ------ g (oz)

Junction-to-Case - IGBT ------ ------ 2.1
Junction-to-Case - Diode ------ ------ 3.5 °C/W
Case-to-Sink, flat, greased surface ------ 0.50 -----­Junction-to-Ambient, typical socket mount -- -- - -- -- - 80

= 600V

≤≤

≤ 2.4V

≤≤

SAT

)

Revision 0:9/04/96

IRGBC20SD2

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Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage ---- 0.75 ---- V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage ---- 1.8 2.4 IC = 10A VGE = 15V

---- 2.4 ---- V I

= 19A

C

---- 1.9 ---- IC = 10A, TJ = 150°C
V
∆V
g
I

fe

CES

GE(th)

GE(th)

Gate Threshold Voltage 3.0 ---- 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA

Forward Transconductance  2.0 5.8 ---- S VCE = 100V, IC = 10A
Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V

---- ---- 1700 VGE = 0V, VCE = 600V, TJ = 150°C
V

I

GES

FM

Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 8.0A

---- 1.3 1.6 I

= 8.0A, TJ = 150°C

C

Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Qge Gate - Emitter Charge (turn-on) ---- 2.3 4.0 nC V
Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

Total Gate Charge (turn-on) ---- 1.6 2.6 IC = 10A

= 400V

CC

Gate - Collector Charge (turn-on) ---- 7.0 12
Turn-On Delay Time ---- 72 ---- TJ = 25°C
Rise Time ---- 69 ---- ns IC = 10A, VCC = 480V
Turn-Off Delay Time ---- 820 ---- VGE = 15V, RG = 5.0Ω
Fall Time ---- 910 ---- Energy losses include "tail" and
Turn-On Switching Loss ---- 0.70 ---- diode reverse recovery.
Turn-Off Switching Loss ---- 3.9 ---- mJ
Total Switching Loss ---- 4.6 ---­Turn-On Delay Time ---- 78 ---- TJ = 150°C,
Rise Time ---- 90 ---- ns
Turn-Off Delay Time ---- 1100 ---- VGE = 15V, RG = 50Ω
Fall Time ---- 1800 ---- Energy losses include "tail" and
Total Switching Loss ---- 7.0 ---- mJ diode reverse recovery.
Internal Emitter Inductance ---- 7.5 ---- n H Measured 5mm from package
Input Capacitance ---- 360 ---- VGE = 0V
Output Capacitance ---- 36 ---- pF VCC = 30V
Reverse Transfer Capacitance ---- 5.2 ---- ƒ = 1.0MHz
Diode Reverse Recovery Time ---- 37 55 ns TJ = 25°C

---- 55 90 T

= 125°C IF = 8.0A

J

Diode Peak Reverse Recovery Current ---- 3.5 5.0 A TJ = 25°C

---- 4.5 8 .0 T

= 125°C VR = 200V

J

Diode Reverse Recovery Charge ---- 65 138 nC TJ = 25°C

---- 124 360 TJ = 125°C di/dt 200A/µs

/dt Diode Peak Rate of Fall of Recovery ---- 240 ---- A/µs TJ = 25°C

During t

b

---- 210 ---- TJ = 125°C

IRGBC20SD2

)

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80

60

40

Square wave:

60% of rated
v o l t a g e

For both:

Duty cycle: 50%
T = 125°C

J

T = 9 0° C

sink

Gate drive as specified

Power D issipation = 40W

Trian g ula r w a v e:

Clamp voltage:
80% of rated

Load Current (A)

20

0

0.1 1 10 10 0

Idea l diod es

f, Frequency (kHz

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

A

1000

100

10

C

I , Collector-to-Emitter Current (A)

1

0.1 1 10

V , Collector-to-Emitter Voltage (V)

CE

Fig. 2 - Typical Output Characteristics

T = 25°C

J

T = 150°C

J

V = 15V

GE

20µs PULSE WIDTH

1000

100

T = 150°C

J

T = 25°C

10

C

I , Collector-to-Emitter Current (A)

A

1

4681012

V , Gate-to-Emitter Voltage (V)

GE

Fig. 3 - Typical Transfer Characteristics

J

V = 10V

CC

5µs PULSE WIDTH

A

IRGBC20SD2

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40

30

20

10

V = 15V

GE

Maximum DC Collector Current (A)

0

25 50 75 100 125 150

T , Case Temperature (°C)

C

Fig. 4 - Maximum Collector Current vs.

Case Temperature

1

2.5

V = 15V

GE

80µs PULSE WIDTH

I = 40A

C

2.0

I = 20A

C

1.5
C

I = 10A

CE

V , Collector-to-Emitter Voltage (V)

A

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

J

A

Fig. 5 - Collector-to-Emitter Voltage vs.

Junction Temperature

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

S ING LE PULSE
(THERMAL RESPONSE)

t , Re ctangu lar P ulse Duration (sec )

P

DM

t

1

t

Notes :

1. Duty factor D = t / t

2. Pea k T = P x Z + T

J

DM

12

thJC

2

C

1

IRGBC20SD2

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4000

3000

2000

C , C apac itance ( pF)

1000

0

1 10 100

V = 0V, f = 1MHz

GE

C = C + C , C S HORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oe s

C

re s

V , C o l le c tor-to- E mitte r Vo ltage (V)

CE

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

1.8

V = 480V

CC

V = 15V

GE

T = 25°C

C

I = 20A

C

1.6

20

V = 40 0V

CE

I = 20A

C

16

12

8

4

GE

V , Ga te-to -Emitter Voltage (V)

A

0

0 20 40 60 80 100 120

Q , Total G ate Charge (nC)

g

A

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = 10
V = 15V

V = 480V

G
GE
CC

Ω

I = 40A

C

1.4

1.2

Total Switching Losses (mJ)

1.0
0 102030405060

R , Gate Resistance (Ω)

G

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

I = 20A

C

1

I = 10A

C

Total Switching Losses (mJ)

A

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

J

A

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

IRGBC20SD2

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5.0

R = 10
T = 150°C
V = 480V

4.0

V = 15V

3.0

2.0

1.0

Total Switching Losses (mJ)

0.0
0 1020304050

Ω

G
C
CC
GE

I , Collector-to-Emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

1000

V = 20 V

GE

GE

T = 125°C

J

100

SAFE O PERATING AREA

10

A

1

1 10 100 1000

V , C ollector-to -Em it te r V o lta g e (V )

CE

Fig. 12 - Turn-Off SOA

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

F

10

T = 150°C

J

T = 125°C

J

T = 2 5 ° C

J

Instantaneous Forward C urrent - I (A)

1

0.8 1.2 1.6 2.0 2.4

Forward Voltage Drop - V (V)

FM

IRGBC20SD2

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100

V = 200V

R

T = 125°C

J

T = 25°C

J

80

I = 30A

F

60

rr

t - (ns)

40

20

100 1000

di /dt - (A/µs)

I = 15A

F

I = 5.0A

F

f

Fig. 14 - Typical Reverse Recovery vs. dif/dt

800

V = 200V

R

T = 125°C

J

T = 25°C

J

100

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 3 0 A

F

I = 1 5A

F

10

IRRM

I - (A )

I = 5.0 A

F

1

100 1000

di /d t - ( A / µ s )

f

Fig. 15 - Typical Recovery Current vs. dif/dt

1000

V = 200 V

R

T = 125°C

J

T = 25°C

J

600

400

RR

Q - ( n C )

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di

I = 1 5 A

F

I = 5. 0A

F

200

0

100 1000

I = 30A

F

di /dt - (A/µs)

f

I = 5.0A

F

I = 15A

F

I = 30A

di(re c )M/d t - (A / µ s)

F

100

100 1000

d i /d t - (A /µ s )

f

/dt vs. dif/dt

(rec)M

IRGBC20SD2

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90% Vge

+Vge

Same type
device as
D.U.T.

80%
of Vce

430µF

D.U.T.

Fig. 18a - Test Circuit for Measurement of

I

LM

Vcc

, Eon, E

10% +Vg

10% Ic

, trr, Qrr, Irr, t

off(diode)

Vce

5% Vce

trtd(on)

t1 t2

d(on)

GATE VOLTAGE D .U.T.

+Vg

90% Ic

, tr, t

d(off)

DUT VOLTAGE
AND CURRENT

Ipk

Vce ie dt

Eon =

t1

Vce

10% Vce

Ic

td(off)

, t

f

t1

90% Ic

Ic

5% Ic

tf

Eoff =

t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

, t

d(off)

t3

, t

f

trr

Qrr =

10% Irr

DIODE RE COV E RY
WAVEFORMS

Erec =

t4

E

off

Ic

tx
10% Vcc

Vpk

Ic

t2

DIODE REVERSE
RECOVERY ENERGY

Irr

t1+5µS

Vce ic dt

t1

trr

id dt

tx

Vcc

t4

Vd id dt

t3

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

, t

Defining E

on

d(on)

, t

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

r

Defining E

, trr, Qrr, I

rec

rr

Vg

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GATE SIGN AL
DEVICE UNDE R TE ST

CURRENT D.U.T.

VOL T A G E IN D.U .T.

CURRENT IN D1

IRGBC20SD2

t0 t1

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L

V *

50V

6000µ F
100V

1000V

c

Figure 19. Clamped Inductive Load Test

Circuit

t2

D.U.T.

RL=

0 - 480V

Figure 20. Pulsed Collector Current

Test Circuit

4 X I

480V

@25°C

C

IRGBC20SD2

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Notes:

 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
 VCC=80%(V
 Pulse width ≤ 80µs; duty factor ≤ 0.1%.
 Pulse width 5.0µs, single shot.

Case Outline  TO-247AC

), VGE=20V, L=10µH, RG= 50Ω

CES

20.30 (.800)

19.70 (.775)

14.80 (.583)

*

14.20 (.559)

2.40 (.094)

2.00 (.079)

5.45 (.215)

15.90 (.626)

15.30 (.602)

- B -

1

2X

2X

2

3

3.40 (.133)

3.00 (.118)

3.65 (.143)

3.55 (.140)

M

D

M

0.25 (.010)

- A -

5. 50 (. 217)

5. 50 (. 217)

2X

4. 50 (. 177)

- C -

4.30 (.170)

3.70 (.145)

1.40 (.056)

3X

1.00 (.039)

M

0.25 (.010)

CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P)

Dimen sion s in M illimeters a nd (Inches)

B

S

C

A

- D -

2. 50 (. 089)

1. 50 (. 059)

3X

2.60 (.102)

2.20 (.087)

5.30 (.209)

4.70 (.185)

4

0.80 (.031)

0.40 (.016)

NOTES:
1 DIMENSIONS & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS ARE SHOWN
MILLIMETERS (INCHES).
4 CONFORMS TO JEDEC OUTLINE
TO -247AC .

LEAD ASSIGNMENTS
1 - GATE
2 - COLLECTOR
3 - EMITTE R
4 - COLLECTOR

LON G ER L EAD ED (20 m m)

*

VERSION AVAILABLE (TO-247AD)
TO ORDE R A DD " -E" SUF FIX
TO PART NUM BER

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