International Rectifier IRGBC20SD2 Datasheet
PD-9.1544
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PROVISIONAL
INSULATED GATE BIPOLAR TRANSISTOR WITH
IRGBC20SD2
Standard Speed CoPack
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Switching-loss rating includes all 'tail' losses
• HEXFRED
• Optimized for line frequency operation (to 400HZ)
TM
soft ultrafast diodes
Description
Co-packaged IGBTs are a natural extension of
G
E
n-channel
V
CES
V
CE(
@VGE = 15V, IC = 10A
International Rectifier's well-known IGBT line. They
provide the convenience of an IBGT and an ultrafast
recovery diode in one package, resulting in
substantial benefits to a host of high-voltage, highcurrent, motor control, UPS and power supply
applications.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
V
CES
@ TC = 25°C Continuous Collector Current 19
I
C
IC @ TC = 100°C Continuous Collector Current 10
I
CM
I
LM
@ TC = 100°C Diode Continuous Forward Current 7.0
I
F
I
FM
V
GE
@ TC = 25°C Maximum Power Dissipation 60 W
P
D
PD @ TC = 100°C Maximum Power Dissipation 24
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 76 A
Clamped Inductive Load Current 38
Diode Maximum Forward Current 32
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ------ 2 (0.07) ------ g (oz)
Junction-to-Case - IGBT ------ ------ 2.1
Junction-to-Case - Diode ------ ------ 3.5 °C/W
Case-to-Sink, flat, greased surface ------ 0.50 -----Junction-to-Ambient, typical socket mount -- -- - -- -- - 80
= 600V
≤≤
≤ 2.4V
≤≤
SAT
)
Revision 0:9/04/96
IRGBC20SD2
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Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage ---- 0.75 ---- V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage ---- 1.8 2.4 IC = 10A VGE = 15V
---- 2.4 ---- V I
= 19A
C
---- 1.9 ---- IC = 10A, TJ = 150°C
V
∆V
g
I
fe
CES
GE(th)
GE(th)
Gate Threshold Voltage 3.0 ---- 5.5 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 2.0 5.8 ---- S VCE = 100V, IC = 10A
Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 1700 VGE = 0V, VCE = 600V, TJ = 150°C
V
I
GES
FM
Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 8.0A
---- 1.3 1.6 I
= 8.0A, TJ = 150°C
C
Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Qge Gate - Emitter Charge (turn-on) ---- 2.3 4.0 nC V
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Total Gate Charge (turn-on) ---- 1.6 2.6 IC = 10A
= 400V
CC
Gate - Collector Charge (turn-on) ---- 7.0 12
Turn-On Delay Time ---- 72 ---- TJ = 25°C
Rise Time ---- 69 ---- ns IC = 10A, VCC = 480V
Turn-Off Delay Time ---- 820 ---- VGE = 15V, RG = 5.0Ω
Fall Time ---- 910 ---- Energy losses include "tail" and
Turn-On Switching Loss ---- 0.70 ---- diode reverse recovery.
Turn-Off Switching Loss ---- 3.9 ---- mJ
Total Switching Loss ---- 4.6 ---Turn-On Delay Time ---- 78 ---- TJ = 150°C,
Rise Time ---- 90 ---- ns
Turn-Off Delay Time ---- 1100 ---- VGE = 15V, RG = 50Ω
Fall Time ---- 1800 ---- Energy losses include "tail" and
Total Switching Loss ---- 7.0 ---- mJ diode reverse recovery.
Internal Emitter Inductance ---- 7.5 ---- n H Measured 5mm from package
Input Capacitance ---- 360 ---- VGE = 0V
Output Capacitance ---- 36 ---- pF VCC = 30V
Reverse Transfer Capacitance ---- 5.2 ---- ƒ = 1.0MHz
Diode Reverse Recovery Time ---- 37 55 ns TJ = 25°C
---- 55 90 T
= 125°C IF = 8.0A
J
Diode Peak Reverse Recovery Current ---- 3.5 5.0 A TJ = 25°C
---- 4.5 8 .0 T
= 125°C VR = 200V
J
Diode Reverse Recovery Charge ---- 65 138 nC TJ = 25°C
---- 124 360 TJ = 125°C di/dt 200A/µs
/dt Diode Peak Rate of Fall of Recovery ---- 240 ---- A/µs TJ = 25°C
During t
b
---- 210 ---- TJ = 125°C
IRGBC20SD2
)
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80
60
40
Square wave:
60% of rated
v o l t a g e
For both:
Duty cycle: 50%
T = 125°C
J
T = 9 0° C
sink
Gate drive as specified
Power D issipation = 40W
Trian g ula r w a v e:
Clamp voltage:
80% of rated
Load Current (A)
20
0
0.1 1 10 10 0
Idea l diod es
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
A
1000
100
10
C
I , Collector-to-Emitter Current (A)
1
0.1 1 10
V , Collector-to-Emitter Voltage (V)
CE
Fig. 2 - Typical Output Characteristics
T = 25°C
J
T = 150°C
J
V = 15V
GE
20µs PULSE WIDTH
1000
100
T = 150°C
J
T = 25°C
10
C
I , Collector-to-Emitter Current (A)
A
1
4681012
V , Gate-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
J
V = 10V
CC
5µs PULSE WIDTH
A
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