PD-9.1544
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PROVISIONAL
INSULATED GATE BIPOLAR TRANSISTOR WITH
IRGBC20SD2
Standard Speed CoPack
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Switching-loss rating includes all 'tail' losses
• HEXFRED
• Optimized for line frequency operation (to 400HZ)
TM
soft ultrafast diodes
Description
Co-packaged IGBTs are a natural extension of
G
E
n-channel
V
CES
V
CE(
@VGE = 15V, IC = 10A
International Rectifier's well-known IGBT line. They
provide the convenience of an IBGT and an ultrafast
recovery diode in one package, resulting in
substantial benefits to a host of high-voltage, highcurrent, motor control, UPS and power supply
applications.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
V
CES
@ TC = 25°C Continuous Collector Current 19
I
C
IC @ TC = 100°C Continuous Collector Current 10
I
CM
I
LM
@ TC = 100°C Diode Continuous Forward Current 7.0
I
F
I
FM
V
GE
@ TC = 25°C Maximum Power Dissipation 60 W
P
D
PD @ TC = 100°C Maximum Power Dissipation 24
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 76 A
Clamped Inductive Load Current 38
Diode Maximum Forward Current 32
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θ JC
R
θ JC
R
θ CS
R
θ JA
Wt Weight ------ 2 (0.07) ------ g (oz)
Junction-to-Case - IGBT ------ ------ 2.1
Junction-to-Case - Diode ------ ------ 3.5 °C/W
Case-to-Sink, flat, greased surface ------ 0.50 -----Junction-to-Ambient, typical socket mount -- -- - -- -- - 80
= 600V
≤≤
≤ 2.4V
≤≤
SAT
)
Revision 0:9/04/96
IRGBC20SD2
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Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆ V
(BR)CES
V
CE(on)
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V V GE = 0V, IC = 250µA
/∆ T
Temperature Coeff. of Breakdown Voltage ---- 0.75 ---- V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage ---- 1.8 2.4 IC = 10A VGE = 15V
---- 2.4 ---- V I
= 19A
C
---- 1.9 ---- IC = 10A, TJ = 150°C
V
∆ V
g
I
fe
CES
GE(th)
GE(th)
Gate Threshold Voltage 3.0 ---- 5.5 VCE = VGE, IC = 250µA
/∆ TJTemperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 2.0 5.8 ---- S VCE = 100V, IC = 10A
Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 1700 VGE = 0V, VCE = 600V, TJ = 150°C
V
I
GES
FM
Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 8.0A
---- 1.3 1.6 I
= 8.0A, TJ = 150°C
C
Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Qge Gate - Emitter Charge (turn-on) ---- 2.3 4.0 nC V
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Total Gate Charge (turn-on) ---- 1.6 2.6 IC = 10A
= 400V
CC
Gate - Collector Charge (turn-on) ---- 7.0 12
Turn-On Delay Time ---- 72 ---- TJ = 25°C
Rise Time ---- 69 ---- ns IC = 10A, VCC = 480V
Turn-Off Delay Time ---- 820 ---- VGE = 15V, RG = 5.0Ω
Fall Time ---- 910 ---- Energy losses include "tail" and
Turn-On Switching Loss ---- 0.70 ---- diode reverse recovery.
Turn-Off Switching Loss ---- 3.9 ---- mJ
Total Switching Loss ---- 4.6 ---Turn-On Delay Time ---- 78 ---- TJ = 150°C,
Rise Time ---- 90 ---- ns
Turn-Off Delay Time ---- 1100 ---- VGE = 15V, RG = 50Ω
Fall Time ---- 1800 ---- Energy losses include "tail" and
Total Switching Loss ---- 7.0 ---- mJ diode reverse recovery.
Internal Emitter Inductance ---- 7.5 ---- n H Measured 5mm from package
Input Capacitance ---- 360 ---- VGE = 0V
Output Capacitance ---- 36 ---- pF VCC = 30V
Reverse Transfer Capacitance ---- 5.2 ---- ƒ = 1.0MHz
Diode Reverse Recovery Time ---- 37 55 ns TJ = 25°C
---- 55 90 T
= 125°C IF = 8.0A
J
Diode Peak Reverse Recovery Current ---- 3.5 5.0 A TJ = 25°C
---- 4.5 8 .0 T
= 125°C VR = 200V
J
Diode Reverse Recovery Charge ---- 65 138 nC TJ = 25°C
---- 124 360 TJ = 125°C di/dt 200A/µs
/dt Diode Peak Rate of Fall of Recovery ---- 240 ---- A/µs TJ = 25°C
During t
b
---- 210 ---- TJ = 125°C
IRGBC20SD2
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80
60
40
Square wave:
60% of rated
v o l t a g e
For both:
Duty cycle: 50%
T = 125°C
J
T = 9 0° C
sink
Gate drive as specified
Power D issipation = 40W
Trian g ula r w a v e:
Clamp voltage:
80% of rated
Load Current (A)
20
0
0.1 1 10 10 0
Idea l diod es
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
A
1000
100
10
C
I , Collector-to-Emitter Current (A)
1
0.1 1 10
V , Collector-to-Emitter Voltage (V)
CE
Fig. 2 - Typical Output Characteristics
T = 25°C
J
T = 150°C
J
V = 15V
GE
20µs PULSE WIDTH
1000
100
T = 150°C
J
T = 25°C
10
C
I , Collector-to-Emitter Current (A)
A
1
4681 01 2
V , Gate-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
J
V = 10V
CC
5µs PULSE WIDTH
A
IRGBC20SD2
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40
30
20
10
V = 15V
GE
Maximum DC Collector Current (A)
0
25 50 75 100 125 150
T , Case Temperature (°C)
C
Fig. 4 - Maximum Collector Current vs.
Case Temperature
1
2.5
V = 15V
GE
80µs PULSE WIDTH
I = 40A
C
2.0
I = 20A
C
1.5
C
I = 10A
CE
V , Collector-to-Emitter Voltage (V)
A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
A
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
S ING LE PULSE
(THERMAL RESPONSE)
t , Re ctangu lar P ulse Duration (sec )
P
DM
t
1
t
Notes :
1. Duty factor D = t / t
2. Pea k T = P x Z + T
J
DM
12
thJC
2
C
1
IRGBC20SD2
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4000
3000
2000
C , C apac itance ( pF)
1000
0
1 10 100
V = 0V, f = 1MHz
GE
C = C + C , C S HORTED
ies ge gc ce
C = C
res gc
C = C + C
oes ce gc
C
ies
C
oe s
C
re s
V , C o l le c tor-to- E mitte r Vo ltage (V)
CE
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.8
V = 480V
CC
V = 15V
GE
T = 25°C
C
I = 20A
C
1.6
20
V = 40 0V
CE
I = 20A
C
16
12
8
4
GE
V , Ga te-to -Emitter Voltage (V)
A
0
0 20 40 60 80 100 120
Q , Total G ate Charge (nC)
g
A
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
R = 10
V = 15V
V = 480V
G
GE
CC
Ω
I = 40A
C
1.4
1.2
Total Switching Losses (mJ)
1.0
0 1 02 03 04 05 06 0
R , Gate Resistance (Ω)
G
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
I = 20A
C
1
I = 10A
C
Total Switching Losses (mJ)
A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
A
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
IRGBC20SD2
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5.0
R = 10
T = 150°C
V = 480V
4.0
V = 15V
3.0
2.0
1.0
Total Switching Losses (mJ)
0.0
0 1 02 03 04 05 0
Ω
G
C
CC
GE
I , Collector-to-Emitter Current (A)
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
1000
V = 20 V
GE
GE
T = 125°C
J
100
SAFE O PERATING AREA
10
A
1
1 10 100 1000
V , C ollector-to -Em it te r V o lta g e (V )
CE
Fig. 12 - Turn-Off SOA
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
F
10
T = 150°C
J
T = 125°C
J
T = 2 5 ° C
J
Instantaneous Forward C urrent - I (A)
1
0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - V (V)
FM
IRGBC20SD2
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100
V = 200V
R
T = 125°C
J
T = 25°C
J
80
I = 30A
F
60
rr
t - (ns)
40
20
100 1000
di /dt - (A/µs)
I = 15A
F
I = 5.0A
F
f
Fig. 14 - Typical Reverse Recovery vs. di f/dt
800
V = 200V
R
T = 125°C
J
T = 25°C
J
100
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 3 0 A
F
I = 1 5A
F
10
IRRM
I - (A )
I = 5.0 A
F
1
100 1000
di /d t - ( A / µ s )
f
Fig. 15 - Typical Recovery Current vs. di f/dt
1000
V = 200 V
R
T = 125°C
J
T = 25°C
J
600
400
RR
Q - ( n C )
Fig. 16 - Typical Stored Charge vs. di f/dt Fig. 17 - Typical di
I = 1 5 A
F
I = 5. 0A
F
200
0
100 1000
I = 30A
F
di /dt - (A/µs)
f
I = 5.0A
F
I = 15A
F
I = 30A
di(re c )M/d t - (A / µ s)
F
100
100 1000
d i /d t - (A /µ s )
f
/dt vs. dif/dt
(rec)M
IRGBC20SD2
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90% Vge
+Vge
Same type
device as
D.U.T.
80%
of Vce
430µF
D.U.T.
Fig. 18a - Test Circuit for Measurement of
I
LM
Vcc
, Eon, E
10% +Vg
10% Ic
, trr, Qrr, Irr, t
off(diode)
Vce
5% Vce
tr td(on)
t1 t2
d(on)
GATE VOLTAGE D .U.T.
+Vg
90% Ic
, tr, t
d(off)
DUT VOLTAGE
AND CURRENT
Ipk
Vce ie dt
Eon =
t1
Vce
10% Vce
Ic
td(off)
, t
f
t1
90% Ic
Ic
5% Ic
tf
Eoff =
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
, t
d(off)
t3
, t
f
trr
Qrr =
10% Irr
DIODE RE COV E RY
WAVEFORMS
Erec =
t4
E
off
Ic
tx
10% Vcc
Vpk
Ic
t2
DIODE REVERSE
RECOVERY ENERGY
Irr
t1+5µS
Vce ic dt
t1
trr
id dt
tx
Vcc
t4
Vd id dt
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
, t
Defining E
on
d(on)
, t
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
r
Defining E
, trr, Qrr, I
rec
rr
Vg
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GATE SIGN AL
DEVICE UNDE R TE ST
CURRENT D.U.T.
VOL T A G E IN D.U .T.
CURRENT IN D1
IRGBC20SD2
t0 t1
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L
V *
50V
6000µ F
100V
1000V
c
Figure 19. Clamped Inductive Load Test
Circuit
t2
D.U.T.
RL=
0 - 480V
Figure 20. Pulsed Collector Current
Test Circuit
4 X I
480V
@25°C
C
IRGBC20SD2
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Notes:
Repetitive rating: V GE=20V; pulse width limited by maximum junction temperature
V CC=80%(V
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Case Outline TO-247AC
), VGE=20V, L=10µH, RG= 50Ω
CES
20.30 (.800)
19.70 (.775)
14.80 (.583)
*
14.20 (.559)
2.40 (.094)
2.00 (.079)
5.45 (.215)
15.90 (.626)
15.30 (.602)
- B -
1
2X
2X
2
3
3.40 (.133)
3.00 (.118)
3.65 (.143)
3.55 (.140)
M
D
M
0.25 (.010)
- A -
5. 50 (. 217)
5. 50 (. 217)
2X
4. 50 (. 177)
- C -
4.30 (.170)
3.70 (.145)
1.40 (.056)
3X
1.00 (.039)
M
0.25 (.010)
CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P)
Dimen sion s in M illimeters a nd (Inches)
B
S
C
A
- D -
2. 50 (. 089)
1. 50 (. 059)
3X
2.60 (.102)
2.20 (.087)
5.30 (.209)
4.70 (.185)
4
0.80 (.031)
0.40 (.016)
NOTES:
1 DIMENSIONS & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS ARE SHOWN
MILLIMETERS (INCHES).
4 CONFORMS TO JEDEC OUTLINE
TO -247AC .
LEAD ASSIGNMENTS
1 - GATE
2 - COLLECTOR
3 - EMITTE R
4 - COLLECTOR
LON G ER L EAD ED (20 m m)
*
VERSION AVAILABLE (TO-247AD)
TO ORDE R A DD " -E" SUF FIX
TO PART NUM BER
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http://www.irf.com/ Data and specifications subject to change without notice. 9/96