International Rectifier IRGBC20KD2 Datasheet

PD - 9.1105

TO-220AB

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IRGBC20KD2

INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE

Features

• Short circuit rated -10µs @125°C, V

GE

= 15V

C

Short Circuit Rated

UltraFast CoPack IGBT

V

= 600V

CES

• Switching-loss rating includes all "tail" losses

• HEXFREDTM soft ultrafast diodes

• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve

G

E

V

CE(sat)

≤ 3.5V

@VGE = 15V, IC = 6.0A

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.

These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 10
IC @ TC = 100°C Continuous Collector Current 6.0
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 7.0
I

FM

t

sc

V

GE

PD @ TC = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C Maximum Power Dissipation 24
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 20 A
Clamped Inductive Load Current 20

Diode Maximum Forward Current 20
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight — 2 (0.07) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case - IGBT — — 2.1
Junction-to-Case - Diode — — 3.5 °C/W
Case-to-Sink, flat, greased surface — 0.50 —
Junction-to-Ambient, typical socket mount — — 80

C-897

Revision 2

IRGBC20KD2

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Qge Gate - Emitter Charge (turn-on) — 4.3 6.8 nC VCC = 480V
Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

sc

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

Notes:

Repetitive rating; VGE=20V, pulse width limited

by max. junction temperature. ( See fig. 20 )

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA

/∆T

Temp. Coeff. of Breakdown Voltage — 0.37 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.4 3.5 IC = 6.0A VGE = 15V

— 3.6 — V IC = 10A See Fig. 2, 5
— 2.8 — IC = 6.0A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 1.9 3.3 — S VCE = 100V, IC = 6.0A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 1700 VGE = 0V, VCE = 600V, TJ = 150°C

Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13

— 1.4 1.7 IC = 8.0A, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 17 26 IC = 6.0A

Gate - Collector Charge (turn-on) — 6.4 11 See Fig. 8
Turn-On Delay Time — 59 — TJ = 25°C
Rise Time — 38 — ns IC = 6.0A, VCC = 480V
Turn-Off Delay Time — 110 210 VGE = 15V, RG = 50Ω
Fall Time — 80 120 Energy losses include "tail" and
Turn-On Switching Loss — 0.28 — diode reverse recovery.
Turn-Off Switching Loss — 0.15 — mJ See Fig. 9, 10, 11, 18
Total Switching Loss — 0.43 0.90
Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C

VGE = 15V, RG = 50Ω, V
Turn-On Delay Time — 52 — TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time — 35 — ns IC = 6.0A, VCC = 480V
Turn-Off Delay Time — 170 — VGE = 15V, RG = 50Ω
Fall Time — 170 — Energy losses include "tail" and
Total Switching Loss — 0.7 — mJ diode reverse recovery.
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 350 — VGE = 0V
Output Capacitance — 50 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 4.7 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.

— 55 90 TJ = 125°C 14 IF = 8.0A

Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig.

— 4.5 8.0 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.

— 124 360 TJ = 125°C 16 di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.

During t

b

— 210 — TJ = 125°C 17

VCC=80%(V

), VGE=20V, L=10µH,

CES

RG= 50Ω, ( See fig. 19 )

Pulse width 5.0µs,

single shot.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

CPK

< 500V

C-898

IRGBC20KD2

LOAD CURRENT (A)

f, Frequency (kHz)

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltage (V)

C

I , Collector-to-Emitter Current (A)

, Gate-to-Em

er Voltage (V)

GE

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8

6

60% of r a ted

4

2

0

0.1 1 10 100

v olta ge

Duty cycle: 5 0 %
T = 12 5°C

J

T = 9 0 °C

sink

Gate drive as specifie d
Turn-on losses include
effect s of reverse recove ry
Power D issipation = 13.5W

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

100

of fundamental)

RMS

100

10

1

0.1

0.1 1 1 0

V

Fig. 2 - Typical Output Characteristics

T = 25°C

J

T = 150°C

J

V = 15 V

G E

20µs P ULS E WIDTH

itt

C-899

10

T = 150°C

J

T = 25°C

J

V = 100 V

CC

1

5 10 15 20

V

5µs PU L SE W IDTH

itt

Fig. 3 - Typical Transfer Characteristics