International Rectifier IRGB430UD2 Datasheet

PD - 9.1067

TO-220AB

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IRGB430UD2

INSULATED GATE BIPOLAR TRANSISTOR

UltraFast CoPack IGBT

WITH ULTRAFAST SOFT RECOVERY DIODE

Features

• Switching-loss rating includes all "tail" losses

• HEXFREDTM soft ultrafast diodes

• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve

G

C

V

= 500V

CES

V

CE(sat)

≤ 3.0V

@VGE = 15V, IC = 15A

E

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 25
IC @ TC = 100°C Continuous Collector Current 15
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 12
I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
T

J

T

STG

Collector-to-Emitter Voltage 500 V

Pulsed Collector Current 50 A
Clamped Inductive Load Current 50

Diode Maximum Forward Current 50
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight — 2 (0.07) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case - IGBT — —— 1.2
Junction-to-Case - Diode — — 2.5 °C/W
Case-to-Sink, flat, greased surface — 0.50 —
Junction-to-Ambient, typical socket mount — — 80

Revision 1

C-625

IRGB430UD2

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Qge Gate - Emitter Charge (turn-on) —- 6.2 9.2 nC VCC = 400V
Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 20 )

Collector-to-Emitter Breakdown Voltage 500 —- —- V VGE = 0V, IC = 250µA

/∆T

Temp. Coeff. of Breakdown Voltage —- 0.46 —- V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage —- 2.3 3.0 IC = 15A VGE = 15V

—- 2.8 —- V IC = 25A See Fig. 2, 5
—- 2.6 —- IC = 15A, TJ = 150°C

Gate Threshold Voltage 3.0 —- 5.5 VCE = VGE, IC = 250µA

/∆TJTemp. Coeff. of Threshold Voltage —- -11 —- mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 2.3 8.1 —- S VCE = 100V, IC = 15A
Zero Gate Voltage Collector Current —- —- 250 µA VGE = 0V, VCE = 500V

—- —- 2500 VGE = 0V, VCE = 500V, TJ = 150°C

Diode Forward Voltage Drop —- 1.4 1.7 V IC = 12A See Fig. 13

—- 1.3 1.6 IC = 12A, TJ = 150°C

Gate-to-Emitter Leakage Current —- —- ±100 nA VGE = ±20V

Total Gate Charge (turn-on) —- 31 47 IC = 15A

Gate - Collector Charge (turn-on) —- 12 19 See Fig. 8
Turn-On Delay Time —- 73 —- TJ = 25°C
Rise Time —- 72 —- ns IC = 15A, VCC = 400V
Turn-Off Delay Time —- 120 180 VGE = 15V, RG = 23Ω
Fall Time —- 100 150 Energy losses include "tail" and
Turn-On Switching Loss —- 0.7 —- diode reverse recovery.
Turn-Off Switching Loss —- 0.4 —- mJ See Fig. 9, 10, 11, 18
Total Switching Loss —- 1.1 1.7
Turn-On Delay Time —- 77 —- TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time —- 75 —- ns IC = 15A, VCC = 400V
Turn-Off Delay Time —- 200 —- VGE = 15V, RG = 23Ω
Fall Time —- 190 —- Energy losses include "tail" and
Total Switching Loss —- 1.5 —- mJ diode reverse recovery.
Internal Emitter Inductance —- 7.5 —- nH Measured 5mm from package
Input Capacitance —- 660 —- VGE = 0V
Output Capacitance —- 110 —- pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance —- 12 —- ƒ = 1.0MHz
Diode Reverse Recovery Time —- 42 60 ns TJ = 25°C See Fig.

—- 80 120 TJ = 125°C 14 IF = 12A

Diode Peak Reverse Recovery Current —- 3.5 6.0 A TJ = 25°C See Fig.

—- 5.6 10 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge —- 80 180 nC TJ = 25°C See Fig.

—- 220 600 TJ = 125°C 16 di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery —- 180 —- A/µs TJ = 25°C See Fig.

During t

b

—- 120 —- TJ = 125°C 17

VCC=80%(V

), VGE=20V, L=10µH,

CES

RG= 23Ω, ( See fig. 19 )

Pulse width 5.0µs,

single shot.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-626

IRGB430UD2

A

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltag e (V)

C

I , Collector-to-Emitter Current (A)

, Gate-to-Em

er Voltage (V)

GE

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15

D u ty cy c le : 5 0 %
T = 12 5° C

J

T = 9 0 °C

12

9

60% of rat e d
v olta ge

6

Load Current (A)

3

0

0.1 1 10 100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

sink

G a te d riv e a s s p ec ifie d
T u r n-on lo s se s i n c lu d e
e ffec t s o f rev e rse re co ve ry
P o w e r D iss ipation = 2 1W

100

T = 25°C

J

T = 150°C

J

10

V = 15V

G E

1

1 10

V

20µs P ULS E WIDTH

itt

Fig. 2 - Typical Output Characteristics

C-627

1000

100

T = 150°C

J

10

1

0.1
5 10 15 20

T = 25°C

J

V

V = 100 V

CC

5µs P ULS E W IDTH

itt

Fig. 3 - Typical Transfer Characteristics