International Rectifier IRGB420UD2 Datasheet

PD - 9.1066

TO-220AB

Next Data SheetIndex

Previous Datasheet

To Order

IRGB420UD2

INSULATED GATE BIPOLAR TRANSISTOR

UltraFast CoPack IGBT
WITH ULTRAFAST SOFT RECOVERY
DIODE

Features

• Switching-loss rating includes all "tail" losses

• HEXFREDTM soft ultrafast diodes

• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve

G

C

V

= 500V

CES

V

CE(sat)

≤ 2.9V

@VGE = 15V, IC = 7.5A

E

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 14
IC @ TC = 100°C Continuous Collector Current 7.5
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 7.0
I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C Maximum Power Dissipation 24
T

J

T

STG

Collector-to-Emitter Voltage 500 V

Pulsed Collector Current 28 A
Clamped Inductive Load Current 28

Diode Maximum Forward Current 28
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight —- 2 (0.07) —- g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case - IGBT —- —- 2.1
Junction-to-Case - Diode —- —- 3.5 °C/W
Case-to-Sink, flat, greased surface —- 0.50 —­Junction-to-Ambient, typical socket mount — — 80

Revision 1

C-617

IRGB420UD2

Next Data SheetIndex

Previous Datasheet

To Order

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 20 )

Collector-to-Emitter Breakdown Voltage 500 — — V VGE = 0V, IC = 250µA

/∆T

Temp. Coeff. of Breakdown Voltage — 0.47 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.4 2.9 IC = 7.5A VGE = 15V

— 3.1 — V IC = 14A See Fig. 2, 5
— 2.7 — IC = 7.5A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemp. Coeff. of Threshold Voltage — -10 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 1.2 2.0 — S VCE = 100V, IC = 7.5A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 500V

— — 1700 VGE = 0V, VCE = 500V, TJ = 150°C

Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13

— 1.3 1.6 IC = 8.0A, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 15 23 IC = 7.5A
Gate - Emitter Charge (turn-on) — 3.7 5.6 nC VCC = 400V
Gate - Collector Charge (turn-on) — 6.5 9.8 See Fig. 8
Turn-On Delay Time — 65 — TJ = 25°C
Rise Time — 44 — ns IC = 7.5A, VCC = 400V
Turn-Off Delay Time — 140 210 VGE = 15V, RG = 50Ω
Fall Time — 110 160 Energy losses include "tail" and
Turn-On Switching Loss — 0.25 — diode reverse recovery.
Turn-Off Switching Loss — 0.25 — mJ See Fig. 9, 10, 11, 18
Total Switching Loss — 0.50 0.80
Turn-On Delay Time — 60 — TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time — 44 — ns IC = 7.5A, VCC = 480V
Turn-Off Delay Time — 230 — VGE = 15V, RG = 50Ω
Fall Time — 220 — Energy losses include "tail" and
Total Switching Loss — 0.8 — mJ diode reverse recovery.
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 330 — VGE = 0V
Output Capacitance — 47 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 5.9 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.

— 55 90 TJ = 125°C 14 IF = 8.0A

Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig.

— 4.5 8.0 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.

— 124 360 TJ = 125°C 16 di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.

During t

b

— 210 — TJ = 125°C 17

VCC=80%(V

), VGE=20V, L=10µH,

CES

RG= 50Ω, ( See fig. 19 )

Pulse width 5.0µs,

single shot.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-618

IRGB420UD2

A

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltag e (V)

C

I , C ollector-to-E m itte r C urrent (A )

, Gate-to-Em

er Voltage (V)

GE

To Order

Next Data SheetIndex

Previous Datasheet

10

D u ty c ycle: 50 %
T = 1 2 5 °C

J

T = 9 0 ° C

8

6

60% of ra ted
vo lta ge

4

Load Current (A)

2

0

0.1 1 10 100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

sink

G a te drive a s s p ec ifi ed
Tu rn -on lo ss e s i n c lu de
effe cts o f re ve rs e re c ov e ry
P o w e r D iss ip a tion = 13W

100

T = 25°C

J

T = 150°C

10

1

1 10

V

J

V = 15V

G E

20µs P ULS E WIDTH

itt

Fig. 2 - Typical Output Characteristics

C-619

100

10

T = 150°C

J

T = 25°C

1

0.1

0.0 1
5 10 15 20

J

V = 1 00V

CC

5µs PU LSE W IDTH

V

itt

Fig. 3 - Typical Transfer Characteristics