International Rectifier IRG4RC20F Datasheet

PD - 91731A

IRG4RC20F

INSULATED GATE BIPOLAR TRANSISTOR

Features

C

Fast Speed IGBT

• Fast: Optimized for medium operating
frequencies (1-5 kHz in hard switching, >20
kHz in resonant mode).

• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than

G

V

CES

V

CE(on) typ.

= 600V

= 1.82V

previous generation IGBTs.

• Industry standard TO-252AA package

• Combines very low V

with low switching

CE(on)

losses

E

N-channel

@VGE = 15V, IC = 12A

Benefits

• Generation 4 IGBTs offer highest efficiency

• Optimized for specific application conditions

• High power density and current rating

D-Pak

TO-252AA

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 22
IC @ TC = 100°C Continuous Collector Current 12 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 66
PD @ TC = 100°C Maximum Power Dissipation 26
T

J

T

STG

Collector-to-Emitter Breakdown Voltage 600 V

Pulsed Collector Current  44
Clamped Inductive Load Current  44
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy  5.0 mJ

W

Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

Wt Weight 0.3 (0.01) ––– g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

Junction-to-Case ––– 1.9
Junction-to-Ambient (PCB mount)* ––– 50

°C/W

2/22/01

IRG4RC20F

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(ON)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Notes:

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage  18 — — V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.72 — V/°C VGE = 0V, IC = 1.0mA

J

— 1.82 2.1 IC = 12A VGE = 15V

Collector-to-Emitter Saturation Voltage — 2.42 — IC = 22A See Fig.2, 5

— 2.04 — IC = 12A , TJ = 150°C

V

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance  5.2 7.75 — S VCE = 100V, IC = 12A
Zero Gate Voltage Collector Current

— — 250 VGE = 0V, VCE = 600V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C

µA

— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge (turn-on) — 27 40 IC = 12A
Gate - Emitter Charge (turn-on) — 4. 8 6.8 n C VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 11.4 17 VGE = 15V
Turn-On Delay Time — 26 —
Rise Time — 24 — TJ = 25°C
Turn-Off Delay Time — 194 290 IC = 12A, VCC = 480V

ns

Fall Time — 226 340 VGE = 15V, RG = 50Ω
Turn-On Switching Loss — 0.19 — Energy losses include "tail"
Turn-Off Switching Loss — 0.92 — mJ See Fig. 9, 10, 14
Total Switching Loss — 1.11 1.4
Turn-On Delay Time — 25 — TJ = 150°C,
Rise Time — 26 — IC = 12A, VCC = 480V
Turn-Off Delay Time — 263 — VGE = 15V, RG = 50Ω

ns

Fall Time — 443 — Energy losses include "tail"
Total Switching Loss — 1.89 — m J See Fig. 11, 14
Internal Emitter Inductance — 7.5 — n H Measured 5mm from package
Input Capacitance — 540 — VGE = 0V
Output Capacitance — 37 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 7.0 — ƒ = 1.0MHz

 Repetitive rating; V

= 20V, pulse width limited by

GE

 Pulse width ≤ 80µs; duty factor ≤ 0.1%.

max. junction temperature. ( See fig. 13b )

 V

= 80%(V

CC

CES

), V

= 20V, L = 10µH, RG = 50Ω,

GE

 Pulse width 5.0µs, single shot.

(See fig. 13a)

 Repetitive rating; pulse width limited by maximum

junction temperature.

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IRG4RC20F

A

30

20

Squar e wa ve:

60% of rated
voltage

10

Load Current (A)

Ideal diodes

0

0.1 1 10 100

For both:

Duty cycle: 50%
T = 125°C

J

T = 90°C

sink
Gate drive as specified
Powe r Dissipation = 15W

Triangular wave :

Clamp voltage:
80% of rated

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

100

T = 25°C

J

T = 150°C

J

10

C

I , Collector-to-Emitter Current (A)

1

12345

V , Collect o r-to-Emitte r Voltage (V)

CE

V = 15V

GE

20µs PULSE WIDTH

A

100

°

T = 150 C

J

10

°

T = 25 C

J

C

I , Collector-to-Emitter Current (A)

1

6 8 10 12 14

V , Gate-to-Emitter Voltage (V)

GE

V = 50V

CC

5µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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