International Rectifier IRG4RC10UD Datasheet

PD 91571A

IRG4RC10UD

INSULATED GATE BIPOLAR TRANSISTOR WITH

UltraFast CoPack IGBT

ULTRAFAST SOFT RECOVERY DIODE

FeaturesFeatures

Features

FeaturesFeatures

• UltraFast: Optimized for medium operating
frequencies ( 8-40 kHz in hard switching, >200
kHz in resonant mode).

• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than

G

previous generation

TM

• IGBT co-packaged with HEXFRED
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations

ultrafast,

n-channel

• Industry standard TO-252AA package

Benefits

• Generation 4 IGBT's offer highest efficiencies
available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require
less/no snubbing

• Lower losses than MOSFET's conduction and Diode
losses

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 8.5
IC @ TC = 100°C Continuous Collector Current 5.0
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 4.0
I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 38
PD @ TC = 100°C Maximum Power Dissipation 15
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current Q 34 A
Clamped Inductive Load Current R 34

Diode Maximum Forward Current 16
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range ° C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θJA

Wt Weight ––– 0.3 (0.01) ––– g (oz)

Junction-to-Case - IGBT ––– ––– 3.3
Junction-to-Case - Diode ––– ––– 7.0 °C/W
Junction-to-Ambient (PCB mount)* ––– ––– 50

C

E

V

CES

V

CE(on) typ.

@VGE = 15V, IC = 5.0A

tf (typ.) = 140ns

D-PAK

TO-252AA

= 600V

= 2.15V

W

Details of note Q through T are on the last page

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12/30/00

IRG4RC10UD

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown VoltageS 600 —— VVGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage — 0.54 — V/°CVGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.15 2.6 IC = 5.0A VGE = 15V

— 2.61 — VIC = 8.5A See Fig. 2, 5
— 2.30 — IC = 5.0A, TJ = 150°C

V
∆V
g
I

CES

V

GE(th)

GE(th)

fe

FM

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -8.7 — mV/°CVCE = VGE, IC = 250µA

Forward Transconductance T 2.8 4.2 — SVCE = 100V, IC = 5.0A
Zero Gate Voltage Collector Current ——250 µ A VGE = 0V, VCE = 600V

——1000 V

= 0V, VCE = 600V, TJ = 150°C

GE

Diode Forward Voltage Drop — 1.5 1.8 V IC = 4.0A See Fig. 13

— 1.4 1.7 IC = 4.0A, TJ = 125°C

I

GES

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Qge Gate - Emitter Charge (turn-on) — 2.6 4.0 nC VCC = 400V See Fig. 8
Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

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Total Gate Charge (turn-on) — 15 22 IC = 5.0A

Gate - Collector Charge (turn-on) — 5.8 8.7 VGE = 15V
Turn-On Delay Time — 40 — TJ = 25°C
Rise Time — 16 — ns IC = 5.0A, VCC = 480V
Turn-Off Delay Time — 87 130 VGE = 15V, RG = 100Ω
Fall Time — 140 210 Energy losses include "tail" and
Turn-On Switching Loss — 0.14 — diode reverse recovery.
Turn-Off Switching Loss — 0.12 — mJ See Fig. 9, 10, 18
Total Switching Loss — 0.26 0.33
Turn-On Delay Time — 38 — TJ = 150°C, See Fig. 11, 18
Rise Time — 18 — ns IC = 5.0A, VCC = 480V
Turn-Off Delay Time — 95 — VGE = 15V, RG = 100Ω
Fall Time — 250 — Energy losses include "tail" and
Total Switching Loss — 0.45 — mJ diode reverse recovery.
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 270 — VGE = 0V
Output Capacitance — 21 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 3.5 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 28 42 ns TJ = 25°C See Fig.

— 38 57 TJ = 125°C 14 IF = 4.0A

Diode Peak Reverse Recovery Current — 2.9 5.2 A TJ = 25°C See Fig.

— 3.7 6.7 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 40 60 nC TJ = 25°C See Fig.

— 70 105 TJ = 125°C 16 di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery — 280 — A/µs TJ = 25°C See Fig.

During t

b

— 235 — TJ = 125°C 17

IRG4RC10UD

1.6

For both:

Duty cycle: 50%
T = 125°C

J

T = 9 0°C

1.2

Square wave:

0.8

LOAD CURRENT (A)

0.4

0.0

0.1 1 10 100

60 % of r a ted
v o l tage

I

Ideal diodes

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

55°C

sink

Gate drive as specified

Pow e r D issip ation = W

1.4

100

o

T = 25 C



J

10

1

C

I , Collector-to-Emitter Current (A)

0.1
1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15V



20µs PULSE WIDTH

GE

T = 150 C



J

Fig. 2 - Typical Output Characteristics

o

100

10



C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11 12 13 14

o

T = 150 C

J

o

T = 25 C



J

V = 50V

CC



5µs PULSE WIDTH

V , Gate-to-Emitter Voltage (V)

GE

Fig. 3 - Typical Transfer Characteristics

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