International Rectifier IRG4RC10U Datasheet
PD - 91572A
IRG4RC10U
INSULATED GATE BIPOLAR TRANSISTOR
FeaturesFeatures
Features
FeaturesFeatures
• UltraFast: Optimized for high operating
frequencies ( 8-40 kHz in hard switching, >200
UltraFast Speed IGBT
C
V
CES
= 600V
kHz in resonant mode)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• Industry standard TO-252AA package
G
E
V
CE(on) typ.
= 2.15V
@VGE = 15V, IC = 5.0A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 8.5
IC @ TC = 100°C Continuous Collector Current 5.0 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 38
PD @ TC = 100°C Maximum Power Dissipation 15
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 34
Clamped Inductive Load Current 34
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 110 mJ
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case )
W
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Wt Weight 0.3 (0.01) ––– g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
Junction-to-Case ––– 3.3
Junction-to-Ambient (PCB mount)* ––– 50
°C/W
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8/30/99
IRG4RC10U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 14 — — V VGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.54 — V/°C VGE = 0V, IC = 1.0mA
J
— 2.15 2.6 IC = 5.0A VGE = 15V
Collector-to-Emitter Saturation Voltage — 2.61 — IC = 8.5A See Fig.2, 5
— 2.30 — IC = 5.0A , TJ = 150°C
V
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -8.7 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 2.8 4.2 — S VCE = 100V, IC = 5.0A
Zero Gate Voltage Collector Current
— — 250 VGE = 0V, VCE = 600V
— — 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 15 22 IC = 5.0A
Gate - Emitter Charge (turn-on) — 2 .6 4.0 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 5.8 8 .7 VGE = 15V
Turn-On Delay Time — 19 —
Rise Time — 11 — TJ = 25°C
Turn-Off Delay Time — 116 240 IC = 5.0A, VCC = 480V
ns
Fall Time — 81 180 VGE = 15V, RG = 100Ω
Turn-On Switching Loss — 0.08 — Energy losses include "tail"
Turn-Off Switching Loss — 0.16 — mJ See Fig. 9, 10, 14
Total Switching Loss — 0.24 0.36
Turn-On Delay Time — 18 — TJ = 150°C,
Rise Time — 14 — IC = 5.0A, VCC = 480V
Turn-Off Delay Time — 180 — VGE = 15V, RG = 100Ω
ns
Fall Time — 150 — Energy losses include "tail"
Total Switching Loss — 0.36 — mJ See Fig. 11, 14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 270 — VGE = 0V
Output Capacitance — 21 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 3.5 — ƒ = 1.0MHz
Repetitive rating; V
= 20V, pulse width limited by
GE
max. junction temperature. ( See fig. 13b )
V
CC
(See fig. 13a)
= 80%(V
CES
), V
= 20V, L = 10µH, RG = 100Ω,
GE
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4RC10U
)
4.0
3.0
Square wave:
2.0
Load Current ( A )
1.0
0.0
0.1 1 10 100
60% of rated
vo ltag e
I
I deal diod es
For both:
Duty cycle: 50%
T = 125°C
J
T = 55°C
A
Gate drive as specified
Pow er Dissipation = 1.4W
Typical FR-4 boar d mount
Triangular wave:
I
Clamp voltage:
80% of rated
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
A
100
o
T = 25 C
J
10
1
C
I , Collector-to-Emitter Current (A)
0.1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
20µs PULSE WIDTH
GE
T = 150 C
J
o
100
10
C
I , Collector-to-Emitter Current (A)
1
5 6 7 8 9 10 11 12 13 14
o
T = 150 C
J
o
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
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