International Rectifier IRG4RC10SD Datasheet

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IRG4RC10SD

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE

Features

• Extremely low voltage drop 1.1V(typ) @ 2A

• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.

• Tight parameter distribution

• IGBT co-packaged with HEXFRED

TM

ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations

G

n-channel

Standard Speed CoPack

C

V

= 600V

CES

V

CE(on) typ.

E

@VGE = 15V, IC = 2.0A

= 1.10V

IGBT

• Industry standard TO-252AA package

Benefits

• Generation 4 IGBT's offer highest efficiencies
available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing

• Lower losses than MOSFET's conduction and

D-PAK

TO-252AA

Diode losses

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 14
IC @ TC = 100°C Continuous Collector Current 8.0
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 4.0
I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 38
PD @ TC = 100°C Maximum Power Dissipation 15
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector CurrentQ 18 A
Clamped Inductive Load Current R 18

Diode Maximum Forward Current 16
Gate-to-Emitter Voltage ± 20 V

W

Operating Junction and -55 to +150
Storage Temperature Range °C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJC

R

θJA

Wt Weight 0.3 (0.01) ––– g (oz)

Junction-to-Case - IGBT ––– 3.3
Junction-to-Case - Diode ––– 7.0
Junction-to-Ambient (PCB mount)* ––– 50

°C/W

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

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12/30/00

IRG4RC10SD

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ T

Q

g

Qge Gate - Emitter Charge (turn-on) — 2.42 3.6 nC VCC = 400V See Fig. 8
Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

Details of note Q through T are on the last page

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Collector-to-Emitter Breakdown VoltageS 600 —— VVGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage — 0.64 — V/°CVGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.58 1.7 IC = 8.0A VGE = 15V

— 2.05 — VIC = 14.0A See Fig. 2, 5
— 1.68 — IC = 8.0A, TJ = 150°C

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -9.5 — mV/°CVCE = VGE, IC = 250µA

Forward TransconductanceT 3.65 5.48 — SVCE = 100V, IC =8.0A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 600V

——1000 V

= 0V, VCE = 600V, TJ = 150°C

GE

Diode Forward Voltage Drop — 1.5 1.8 V IC =4.0A See Fig. 13

— 1.4 1.7 IC =4.0A, TJ = 150°C

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

= 25°C (unless otherwise specified)

J

Parameter Min. T yp. Max. Units Conditions

Total Gate Charge (turn-on) — 15 22 IC = 8.0A

Gate - Collector Charge (turn-on) — 6.53 9.8 VGE = 15V
Turn-On Delay Time — 76 — TJ = 25°C
Rise Time — 32 — ns IC = 8.0A, VCC = 480V
Turn-Off Delay Time — 815 1200 VGE = 15V, RG = 100Ω
Fall Time — 720 1080 Energy losses include "tail" and
Turn-On Switching Loss — 0.31 — diode reverse recovery.
Turn-Off Switching Loss — 3.28 — m J See Fig. 9, 10, 18
Total Switching Loss — 3.60 10.9
Total Switching Loss — 1.46 2.6 mJ IC = 5.0A
Turn-On Delay Time — 70 — TJ = 150°C, See Fig. 10,11, 18
Rise Time — 36 — ns IC = 8.0A, VCC = 480V
Turn-Off Delay Time — 890 — VGE = 15V, RG = 100Ω
Fall Time — 890 — Energy losses include "tail" and
Total Switching Loss — 3.83 — mJ diode reverse recovery.
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 280 — VGE = 0V
Output Capacitance — 30 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 4.0 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 28 42 ns TJ = 25°C See Fig.

— 38 57 TJ = 125°C 14 IF =4.0A

Diode Peak Reverse Recovery Current — 2.9 5.2 A TJ = 25°C See Fig.

— 3.7 6.7 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 40 60 nC TJ = 25°C See Fig.

— 70 105 TJ = 125°C 16 di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery — 280 — A/µs TJ = 25°C See Fig.

During t

b

— 235 — TJ = 125°C 17

IRG4RC10SD

2.50

For both:

Duty cycle: 50%
T = 125°C

2.00

1.50

Square wave:

60% of rated

1.00

v o ltage

I

LOAD CURRENT (A)

0.50

0.00

0.1 1 10 100

Ideal diodes

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

J

T = 90 ° C

PCB Mount, Ta = 55°C

sink

Gate drive as specified

Power Dissipation = W

1.4

100

°

T = 25 C



J

T = 150 C

10

C

I , Collector Current (A)

1

0.5 1.0 1.5 2.0 2.5 3.0

V , Collector-to-Emitter Voltage (V)

CE



J

V = 15V

GE



80µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

°

100

°

T = 150 C



J

10

°

T = 25 C



J

C

I , Collector-to-Emitter Current (A)

1

6 8 10 12

V , Gate-to-Emitter Voltage (V)

GE

V = 50V

CC



5µs PULSE WIDTH

5µs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics

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