International Rectifier IRG4RC10S Datasheet

PD - 91732A
IRG4RC10S
INSULATED GATE BIPOLAR TRANSISTOR
Features
Standard Speed IGBT
C
• Extremely low voltage drop; 1.0V typical at 2A, 100°C
V
= 600V
• Standard: Optimized for minimum saturation
CES
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
• Industry standard TO-252AA package
G
E
V
CE(on) typ.
= 1.10V
@VGE = 15V, IC = 2.0A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter Max. Units
CES
IC @ TC = 25°C Continuous Collector Current 14 IC @ TC = 100°C Continuous Collector Current 8.0 A I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 38 PD @ TC = 100°C Maximum Power Dissipation 15 T
J
T
STG
Collector-to-Emitter Breakdown Voltage 600 V
Pulsed Collector Current 18 Clamped Inductive Load Current 18 Gate-to-Emitter Voltage ± 20 V Reverse Voltage Avalanche Energy 110 mJ
Operating Junction and -55 to + 150 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
W
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Wt Weight 0.3 (0.01) ––– g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
Junction-to-Case ––– 3.3 Junction-to-Ambient (PCB mount)* ––– 50
°C/W
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IRG4RC10S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
V
(BR)CES
V
CE(ON)
V
GE(th)
V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A
/T
Temperature Coeff. of Breakdown Voltage 0.64 V/°C VGE = 0V, IC = 1.0mA
J
1.58 1.7 IC = 8.0A VGE = 15V
Collector-to-Emitter Saturation Voltage 2.05 IC = 14 A See Fig.2, 5
1.68 IC = 8.0A , TJ = 150°C
V
Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA
/TJTemperature Coeff. of Threshold Voltage -9.5 mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 3.7 5.5 S VCE = 100V, IC = 8.0A Zero Gate Voltage Collector Current
250 VGE = 0V, VCE = 600V — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
1000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) 1 5 22 IC = 8.0A Gate - Emitter Charge (turn-on) 2 .4 3.6 nC VCC = 400V See Fig. 8 Gate - Collector Charge (turn-on) 6.5 9.8 VGE = 15V Turn-On Delay Time 25 — Rise Time 28 TJ = 25°C Turn-Off Delay Time 630 950 IC = 8.0A, VCC = 480V
ns
Fall Time 710 1100 VGE = 15V, RG = 100 Turn-On Switching Loss 0.14 Energy losses include "tail" Turn-Off Switching Loss 2.58 mJ See Fig. 9, 10, 14 Total Switching Loss 2.72 4.3 Turn-On Delay Time 24 TJ = 150°C, Rise Time 31 IC = 8.0A, VCC = 480V Turn-Off Delay Time 810 VGE = 15V, RG = 100
ns
Fall Time — 1300 — Energy losses include "tail" Total Switching Loss 3.94 mJ See Fig. 11, 14 Internal Emitter Inductance 7 .5 nH Measured 5mm from package Input Capacitance 280 VGE = 0V Output Capacitance 30 pF VCC = 30V See Fig. 7 Reverse Transfer Capacitance 4.0 ƒ = 1.0MHz
Repetitive rating; V
= 20V, pulse width limited by
GE
Pulse width 80µs; duty factor 0.1%.
max. junction temperature. ( See fig. 13b )
V
= 80%(V
CC
CES
), V
= 20V, L = 10µH, RG = 100,
GE
Pulse width 5.0µs, single shot.
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4RC10S
3.0
2.0
Square wa ve :
60% of rated voltage
1.0
Load Current ( A )
Ideal diodes
0.0
0.1 1 10 100
For bot h :
Duty cycle: 50% T = 125˚C
J
T = 90˚C
sink Gate drive as specified Powe r D iss ipa tio n = 0.70W
Triangu lar wa ve :
Clamp vo lt ag e: 80% of rated
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
100
of fundamental)
RMS
100
A
°
T = 25 C
J
10
C
I , Collector Current (A)
1
0.8 1.2 1.6 2.0 2.4 2.8 3.2
V , Collector-to-Emitter Voltage (V)
CE
T = 150 C
V = 15V
GE
20µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
°
J
10
C
I , Collector-to-Emitter Current (A)
1
6 8 10 12
°
T = 150 C
J
°
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
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