International Rectifier IRG4PSH71KD Datasheet

PD - 91688A

PRELIMINARY

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE

Features

• Hole-less clip/pressure mount package compatible

IRG4PSH71KD

Short Circuit Rated

UltraFast IGBT

C

V

= 1200V

CES

with TO-247 and TO-264, with reinforced pins

• High short circuit rating IGBTs, optimized for
motorcontrol

G

V

CE(on) typ.

= 2.97V

• Minimum switching losses combined with low
conduction losses

• Tightest parameter distribution

• IGBT co-packaged with ultrafast soft recovery

E

n-channel

@VGE = 15V, IC = 42A

antiparallel diode

• Creepage distance increased to 5.35mm

Benefits

• Highest current rating copack IGBT

• Maximum power density, twice the power
handling of the TO-247, less space than TO-264

• HEXFREDTM diode optimized for operation with
IGBT, to minimize EMI, noise and switching losses

SUPER - 247

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 78
IC @ TC = 100°C Continuous Collector Current 42
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 42
I

FM

t

sc

V

GE

PD @ TC = 25°C Maximum Power Dissipation 350
PD @ TC = 100°C Maximum Power Dissipation 140
T

J

T

STG

Collector-to-Emitter Voltage 1200 V

Pulsed Collector Current  156 A
Clamped Inductive Load Current  156

Diode Maximum Forward Current 156
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V

W

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Thermal Resistance\ Mechanical

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

Junction-to-Case - IGBT ––– ––– 0.36
Junction-to-Case - Diode ––– ––– 0.69 °C/W
Case-to-Sink, flat, greased surface ––– 0.24 –––
Junction-to-Ambient, typical socket mount ––– ––– 38
Recommended Clip Force 20.0(2.0) ––– ––– N (kgf)
Weight ––– 6 (0.21) ––– g (oz)

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IRG4PSH71KD

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage — 1.1 — V/°C VGE = 0V, IC = 10mA

J

Collector-to-Emitter Saturation Voltage — 2.97 3.9 IC = 42A VGE = 15V

— 3.44 — V IC = 78A See Fig. 2, 5

— 2.60 — IC = 42A, TJ = 150°C
V
∆V
g
I

CES

GE(th)

GE(th)

fe

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 1.5mA

Forward Transconductance  25 38 — S VCE = 50V, IC = 42A
Zero Gate Voltage Collector Current — — 500 µA VGE = 0V, VCE = 1200V

— — 10 mA VGE = 0V, VCE = 1200V, TJ = 150°C
V

I

FM

GES

Diode Forward Voltage Drop — 2.5 3 . 7 IC = 42A See Fig. 13

— 2.4 — IC = 42A, TJ = 150°C

V

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q
Q
Q
t

d(on)

t

r

t

d(off)

t

f

E
E
E
t

sc

g
ge
gc

on
off
ts

Total Gate Charge (turn-on) — 410 610 IC = 42A
Gate - Emitter Charge (turn-on) — 47 70 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 145 220 VGE = 15V
Turn-On Delay Time — 67 —
Rise Time — 84 — TJ = 25°C
Turn-Off Delay Time — 230 350 IC = 42A, VCC = 800V

ns

Fall Time — 130 190 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss — 5.68 — Energy losses include "tail"
Turn-Off Switching Loss — 3.23 — m J and diode reverse recovery
Total Switching Loss — 8.90 11.6 See Fig. 9,10,18
Short Circuit Withstand Time 10 — — µs VCC = 720V, TJ = 125°C

VGE = 15V, RG = 5.0Ω

t

d(on)

t

r

t

d(off)

t

f

E
L
C
C
C
t

rr

ts

E

ies
oes
res

Turn-On Delay Time — 65 — TJ = 150°C, See Fig. 11,18
Rise Time — 87 — IC = 42A, VCC = 800V
Turn-Off Delay Time — 370 — VGE = 15V, RG = 5.0Ω

ns

Fall Time — 290 — Energy losses include "tail"
Total Switching Loss — 13.7 — mJ and diode reverse recovery
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 5770 — VGE = 0V
Output Capacitance — 400 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 100 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 107 160 n s TJ = 25°C See Fig.

— 160 240 TJ = 125°C 14 IF = 42A
I

rr

Diode Peak Reverse Recovery Current — 10 15 A TJ = 25°C See Fig.

—1624 TJ = 125°C 15 VR = 200V
Q

rr

Diode Reverse Recovery Charge — 680 1020 nC TJ = 25°C See Fig.

— 1400 2100 TJ = 125°C 16 di/dt = 200A/µs
di

/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs TJ = 25°C See Fig.

(rec)M

During t

b

— 320 — TJ = 125°C 17

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IRG4PSH71KD

40

For both:

Duty cycle: 50%
T = 125°C

J

T = 90° C

30

Square wave:

20

LOAD CURRENT (A)

10

0

0.1 1 10 100

60 % o f r a ted
v o l tage

I

Ideal diodes

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

sink

Gate drive as specified

Power Dissipation = W

58

1000

100

10

C

I , Collector Current (A)

Ic , Collector-to-Emitter Current (A)

1

1.0 2.0 3.0 4.0 5.0

T = 150 C

V , Collector-to-Emitter Voltage (V)

J

CE

°

°

T = 25 C

J

V = 15V

GE

80µs PULSE WIDTH

1000

100

°

T = 150 C

J

10

°

T = 25 C

J

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11

V , Gate-to-Emitter Voltage (V)

GE

V = 50V

CC

5µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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