International Rectifier IRG4PSC71U Datasheet
PD - 91681A
IRG4PSC71U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
C
UltraFast Speed IGBT
V
= 600V
CES
in resonant mode soft switching
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
• Industry-benchmark Super-247 package with
G
E
n-channel
V
CE(on) typ.
= 1.67V
@VGE = 15V, IC = 60A
higher power handling capability compared to
same footprint TO-247
• Creepage distance increased to 5.35mm
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• Cost and space saving in designs that require
multiple, paralleled IGBTs
SUPER - 247
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 85
IC @ TC = 100°C Continuous Collector Current 60 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 350
PD @ TC = 100°C Maximum Power Dissipation 140
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 600 V
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
➀➀
➀ 200
➀➀
➁➁
➁ 200
➁➁
➂➂
➂ 180 mJ
➂➂
W
°C
Thermal Resistance\ Mechanical
Parameter Min. Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– ––– 0.36
Case-to-Sink, flat, greased surface ––– 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– ––– 38
Recommended Clip Force 20.0(2.0) ––– ––– N (kgf)
Weight ––– 6 (0.21) ––– g (oz)
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IRG4PSC71U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Collector-to-Emitter Breakdown Voltage 600 – –– – –– V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage
/∆T
Temperature Coeff. of Breakdown Voltage –– – 0.45 –– – V/°C VGE = 0V, IC = 5.0mA
J
➃➃
➃ 18 ––– ––– V VGE = 0V, IC = 1.0A
➃➃
––– 1.67 2.0 IC = 60A VGE = 15V
Collector-to-Emitter Saturation Voltage ––– 1.95 –– – IC = 100A See Fig.2, 5
––– 1.71 ––– IC = 60A , TJ = 150°C
V
Gate Threshold Voltage 3.0 –– – 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ––– -10 –– – mV/°C VCE = VGE, IC = 1.0mA
Forward Transconductance
Zero Gate Voltage Collector Current
➄➄
➄ 47 70 ––– S VCE = 50V, IC = 60A
➄➄
––– ––– 500 VGE = 0V, VCE = 600V
––– ––– 2. 0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
––– ––– 5.0 mA VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current ––– –– – ±100 n A VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) ––– 340 520 IC = 60A
Gate - Emitter Charge (turn-on) ––– 44 66 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) ––– 160 240 VGE = 15V
Turn-On Delay Time ––– 34 –––
Rise Time ––– 50 ––– TJ = 25°C
Turn-Off Delay Time ––– 56 84 IC = 60A, VCC = 480V
ns
Fall Time ––– 86 130 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss ––– 0.42 ––– Energy losses include "tail"
Turn-Off Switching Loss ––– 1.99 ––– mJ See Fig. 10, 11, 13, 14
Total Switching Loss ––– 2.41 3.2
Turn-On Delay Time ––– 30 ––– TJ = 150°C,
Rise Time ––– 49 ––– IC = 60A, VCC = 480V
Turn-Off Delay Time ––– 12 9 ––– VGE = 15V, RG = 5.0Ω
ns
Fall Time ––– 175 ––– Energy losses include "tail"
Total Switching Loss ––– 4.5 ––– mJ See Fig. 13, 14
Internal Emitter Inductance ––– 13 ––– nH Measured 5mm from package
Input Capacitance ––– 7500 ––– VGE = 0V
Output Capacitance ––– 720 ––– pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ––– 93 ––– ƒ = 1.0MHz
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
= 80%(V
CC
(See fig. 13a)
CES
= 20V, pulse width limited by
GE
), V
= 20V, L = 10µH, RG = 5.0Ω,
GE
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Current limited by the package, (Die current = 100A)
Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4PSC71U
A
150
120
90
60
Square wave:
60% of rated
voltage
For bot h:
Duty cycle: 50%
T = 125°C
J
T = 90°C
sink
Gate drive as specif ied
Power Di ssipati on = 58W
Triangular wave:
Clamp voltage:
80% of ra te d
Load Current (A)
30
0
0.1 1 10 100
Ideal diodes
f, F re q u e n cy (k H z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
1000
of fundamental; for triangular wave, I=IPK)
RMS
1000
°
T = 25 C
J
100
10
C
I , Collector Current (A)
Ic , Collector-to-Emitter Current (A)
1
1.0 1.5 2.0 2.5 3.0 3.5
V , Collector-to-Emitter Voltage (V)
CE
°
T = 150 C
J
V = 15V
GE
80µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
100
10
C
I , Collector-to-Emitter Current (A)
1
5 6 7 8 9 10
V , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
°
T = 150 C
J
GE
°
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
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