International Rectifier IRG4PSC71KD Datasheet

PD - 91684A

PRELIMINARY

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE

Features

• Hole-less clip/pressure mount package compatible

IRG4PSC71KD

Short Circuit Rated

UltraFast IGBT

C

V

= 600V

CES

with TO-247 and TO-264, with reinforced pins

• High abort circuit rating IGBTs, optimized for
motorcontrol

G

V

CE(on) typ.

= 1.83V

• Minimum switching losses combined with low
conduction losses

• Tightest parameter distribution

• IGBT co-packaged with ultrafast soft recovery

E

n-channel

@VGE = 15V, IC = 60A

antiparallel diode

• Creepage distance increased to 5.35mm

Benefits

• Highest current rating copack IGBT

• Maximum power density, twice the power
handling of the TO-247, less space than TO-264

• HEXFREDTM diode optimized for operation with
IGBT, to minimize EMI, noise and switching losses

SUPER - 247

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 85
IC @ TC = 100°C Continuous Collector Current 60
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 50
I

FM

t

sc

V

GE

PD @ TC = 25°C Maximum Power Dissipation 350
PD @ TC = 100°C Maximum Power Dissipation 140
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current  200 A
Clamped Inductive Load Current  200

Diode Maximum Forward Current 200
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V

W

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Thermal Resistance\ Mechanical

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

Junction-to-Case - IGBT ––– ––– 0.36
Junction-to-Case - Diode ––– ––– 0.69 °C/W
Case-to-Sink, flat, greased surface ––– 0.24 –––
Junction-to-Ambient, typical socket mount ––– ––– 38
Recommended Clip Force 20.0(2.0) ––– ––– N (kgf)
Weight ––– 6 (0.21) ––– g (oz)

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5/11/99

IRG4PSC71KD

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage — 0.5 — V/°C VGE = 0V, IC = 10mA

J

Collector-to-Emitter Saturation Voltage — 1.83 2.3 IC = 60A VGE = 15V

— 2.20 — V IC = 100A See Fig. 2, 5

— 1.81 — IC = 60A, TJ = 150°C
V
∆V
g
I

CES

GE(th)

GE(th)

fe

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -8.0 — mV/°C VCE = VGE, IC = 1.5mA

Forward Transconductance  31 46 — S VCE = 50V, IC = 60A
Zero Gate Voltage Collector Current — — 500 µA VGE = 0V, VCE = 600V

— — 13 mA VGE = 0V, VCE = 600V, TJ = 150°C
V

I

FM

GES

Diode Forward Voltage Drop — 1.4 1 .7 IC = 60A See Fig. 13

— 1.3 — IC = 60A, TJ = 150°C

V

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q
Q
Q
t

d(on)

t

r

t

d(off)

t

f

E
E
E
t

sc

t

d(on)

t

r

t

d(off)

t

f

E
L
C
C
C
t

rr

g
ge
gc

on
off
ts

ts

E

ies
oes
res

Total Gate Charge (turn-on) — 340 510 IC = 60A
Gate - Emitter Charge (turn-on) — 44 66 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 160 240 VGE = 15V
Turn-On Delay Time — 82 —
Rise Time — 107 — TJ = 25°C
Turn-Off Delay Time — 282 423 IC = 60A, VCC = 480V

ns

Fall Time — 97 146 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss — 3.95 — Energy losses include "tail"
Turn-Off Switching Loss — 2.33 — m J and diode reverse recovery
Total Switching Loss — 6.28 7.7 See Fig. 9,10,18
Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C

VGE = 15V, RG = 5.0Ω , V

CPK

< 500V
Turn-On Delay Time — 87 — TJ = 150°C, See Fig. 11,18
Rise Time — 104 — IC = 60A, VCC = 480V
Turn-Off Delay Time — 374 — VGE = 15V, RG = 5.0Ω

ns

Fall Time — 143 — Energy losses include "tail"
Total Switching Loss — 8. 5 — mJ and diode reverse recovery
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 6900 — VGE = 0V
Output Capacitance — 730 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 190 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 82 120 ns TJ = 25°C See Fig.

— 140 210 TJ = 125°C 14 IF = 60A

I

rr

Diode Peak Reverse Recovery Current — 8.2 12 A TJ = 25°C See Fig.

—1320 TJ = 125°C 15 VR = 200V

Q

rr

Diode Reverse Recovery Charge — 364 546 nC TJ = 25°C See Fig.

— 1084 1625 TJ = 125°C 16 di/dt = 200A/µs

di

/dt Diode Peak Rate of Fall of Recovery — 328 — A/µs TJ = 25°C See Fig.

(rec)M

During t

b

— 266 — TJ = 125°C 17

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IRG4PSC71KD

A

60

45

Square wave:

30

LOAD CURRENT (A)

15

0

0.1 1 10 100

60 % o f r a ted
v o l tage

I

Ideal diodes

For both:

Duty cycle: 50%
T = 125°C

J

T = 90° C

sink

Gate drive as specified

Power Dissipation = W

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

1000

of fundamental)

RMS

1000

58

100

T = 150°C

J

10

Ic , Collector-to-Emitter Current (A)

1

01234

V , Co llector-to -Em itter Vo ltage (V)

CE

T = 25°C

J

V = 1 5V

GE

20µs PULSE W IDTH

100

T = 150 C

10

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11

°

J

°

T = 25 C

J

V = 50V

CC

5µs PULSE WIDTH

V , Gate-to-Emitter Voltage (V)

GE

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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