International Rectifier IRG4PSC71K Datasheet
PD - 91683A
PRELIMINARY
INSULATED GATE BIPOLAR TRANSISTOR
IRG4PSC71K
Short Circuit Rated
UltraFast IGBT
C
Features
= 600V
V
• Hole-less clip/pressure mount package compatible
CES
with TO-247 and TO-264, with reinforced pins
• High abort circuit rating IGBTs, optimized for
V
G
CE(on) typ.
= 1.83V
motorcontrol
• Minimum switching losses combined with low
conduction losses
• Tightest parameter distribution
E
n-channel
@VGE = 15V, IC = 60A
• Creepage distance increased to 5.35mm
Benefits
• Highest current rating IGBT
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
SUPER - 247
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 85
IC @ TC = 100°C Continuous Collector Current 60
I
CM
I
LM
t
SC
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 350
PD @ TC = 100°C Maximum Power Dissipation 140
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 600 V
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time 10 µ s
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
➀➀
➀ 200
➀➀
➁➁
➁ 200
➁➁
➂➂
➂ 180 mJ
➂➂
W
°C
A
Thermal Resistance\ Mechanical
Parameter Min. Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– ––– 0.36
Case-to-Sink, flat, greased surface ––– 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– ––– 38
Recommended Clip Force 20.0(2.0) ––– ––– N (kgf)
Weight ––– 6 (0.21) ––– g (oz)
www.irf.com 1
5/11/99
IRG4PSC71K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
CC
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
2 www.irf.com
Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage
/∆T
Temperature Coeff. of Breakdown Voltage ––– 0.5 ––– V/°C VGE = 0V, IC = 10mA
J
➃➃
➃ 18 ––– ––– V VGE = 0V, IC = 1.0A
➃➃
––– 1.83 2.3 IC = 60A VGE = 15V
Collector-to-Emitter Saturation Voltage ––– 2.20 ––– IC = 100A See Fig.2, 5
––– 1.81 ––– IC = 60A , TJ = 150°C
V
Gate Threshold Voltage 3.0 –– – 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage –– – -8.0 – –– mV/°C VCE = VGE, IC = 1.5mA
Forward Transconductance
Zero Gate Voltage Collector Current
➄➄
➄ 31 46 ––– S VCE = 50V, IC = 60A
➄➄
––– ––– 500 VGE = 0V, VCE = 600V
––– ––– 2. 0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
––– ––– 5.0 mA VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current ––– – –– ±100 n A VGE = ±20V
Total Gate Charge (turn-on) — 340 510 IC = 60A
Gate - Emitter Charge (turn-on) — 44 66 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 160 240 VGE = 15V
Turn-On Delay Time — 34 —
Rise Time — 54 — TJ = 25°C
Turn-Off Delay Time — 251 377 IC = 60A, VCC = 480V
ns
Fall Time — 89 133 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss — 0.79 — Energy losses include "tail"
Turn-Off Switching Loss — 1.98 — mJ and diode reverse recovery
Total Switching Loss — 2.77 3.1 See Fig. 9,10,18
Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 5.0Ω
Turn-On Delay Time — 37 — TJ = 150°C, See Fig. 10,11,18
Rise Time — 56 — IC = 60A, VCC = 480V
Turn-Off Delay Time — 356 — VGE = 15V, RG = 5.0Ω,
ns
Fall Time — 177 — Energy losses include "tail"
Total Switching Loss — 5.5 — mJ and diode reverse recovery
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 6900 — VGE = 0V
Output Capacitance — 730 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 190 — ƒ = 1.0MHz
= 80%(V
CES
= 20V, pulse width limited by
GE
), V
= 20V, L = 10µH, RG = 5.0Ω,
GE
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Current limited by the package, (Die current = 100A)
IRG4PSC71K
A
)
A
120
90
60
Square wave:
60% of rated
voltage
For both:
Duty cycle: 50%
T = 125°C
J
T = 90°C
sink
Gate drive as specified
Power Dissipation = 58W
Triangular wave:
Clamp voltage:
80% of rated
Load C urrent (A)
30
Idea l diodes
0
0.1 1 10 100
f, F requency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
1000
of fundamental; for triangular wave, I=IPK)
RMS
1000
100
T = 150°C
J
10
Ic , Collector-to-Emitter Current (A)
1
01234
V , Co llector-to -Em itter Vo ltage (V)
CE
T = 25°C
J
V = 1 5V
GE
20µs PULSE W IDTH
Fig. 2 - Typical Output Characteristics
100
T = 150 C
10
C
I , Collector-to-Emitter Current (A)
1
5 6 7 8 9 10 11
°
J
°
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
www.irf.com 3
Loading...