International Rectifier IRG4PH50UD Datasheet
TO-247AC
PD 91573A
IRG4PH50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
FeaturesFeatures
Features
FeaturesFeatures
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
G
n-channel
bridge configurations
• Industry standard TO-247AC package
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 45
IC @ TC = 100°C Continuous Collector Current 24 A
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 16
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 1200 V
Pulsed Collector Current Q 180
Clamped Inductive Load Current R 180
Diode Maximum Forward Current 180
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
C
V
= 1200V
CES
V
CE(on) typ.
E
@VGE = 15V, IC = 24A
= 2.78V
W
°C
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ––– 6 (0.21) ––– g (oz)
Junction-to-Case - IGBT ––– ––– 0.64
Junction-to-Case - Diode ––– ––– 0.83 °C/W
Case-to-Sink, flat, greased surface ––– 0.24 –––
Junction-to-Ambient, typical socket mount ––– ––– 40
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7/7/2000
IRG4PH50UD
Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
Collector-to-Emitter Breakdown VoltageS 1200 —— VVGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage — 1.20 — V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 2.56 3.5 IC = 20A VGE = 15V
— 2.78 3.7 IC = 24A
— 3.20 — VI
— 2.54 — I
V
∆V
g
I
CES
GE(th)
GE(th)
fe
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -13 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance T 23 35 — SVCE = 100V, IC = 24A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 1200V
= 45A See Fig. 2, 5
C
= 24A, TJ = 150°C
C
——6500 VGE = 0V, VCE = 1200V, TJ = 150°C
V
FM
Diode Forward Voltage Drop — 2.5 3.5 V IC = 16A See Fig. 13
— 2.1 3.0 IC = 16A, TJ = 150°C
I
GES
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 160 250 IC = 24A
Qge Gate - Emitter Charge (turn-on) — 27 40 nC VCC = 400V See Fig. 8
Q
t
d(on)
t
r
t
d(off)
t
f
E
E
E
t
d(on)
t
r
t
d(off)
t
f
E
L
C
C
C
t
rr
gc
on
off
ts
ts
E
ies
oes
res
Gate - Collector Charge (turn-on) — 53 80 VGE = 15V
Turn-On Delay Time — 47 — TJ = 25°C
Rise Time — 24 — ns IC = 24A, VCC = 800V
Turn-Off Delay Time — 110 170 VGE = 15V, RG = 5.0Ω
Fall Time — 180 260 Energy losses include "tail" and
Turn-On Switching Loss — 2.10 — diode reverse recovery.
Turn-Off Switching Loss — 1.50 — mJ See Fig. 9, 10, 18
Total Switching Loss — 3.60 4.6
Turn-On Delay Time — 46 — TJ = 150°C, See Fig. 11, 18
Rise Time — 27 — ns IC = 24A, VCC = 800V
Turn-Off Delay Time — 240 — VGE = 15V, RG = 5.0Ω
Fall Time — 330 — Energy losses include "tail" and
Total Switching Loss — 6.38 — mJ diode reverse recovery.
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 3600 — VGE = 0V
Output Capacitance — 160 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 31 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 90 135 ns TJ = 25°C See Fig.
— 164 245 TJ = 125°C 14 IF = 16A
I
rr
Diode Peak Reverse Recovery Current — 5.8 10 A TJ = 25°C See Fig.
— 8.3 15 TJ = 125°C 15 VR = 200V
Q
rr
Diode Reverse Recovery Charge — 260 675 nC TJ = 25°C See Fig.
— 680 1838 TJ = 125°C 16 di/dt = 200A/µs
di
/dt Diode Peak Rate of Fall of Recovery — 120 — A/µs TJ = 25°C See Fig.
(rec)M
During t
b
— 76 — TJ = 125°C 17
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IRG4PH50UD
30
25
20
Square wave:
15
10
60 % o f rate d
v olta ge
I
For both:
Duty cycle: 50%
T = 125° C
J
T = 9 0 ° C
sink
Gate drive as specified
Power Dissipation = W
40
LOAD CURRENT (A)
5
0
0.1 1 10 100
Ideal diodes
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
1000
of fundamental)
RMS
1000
100
o
T = 150 C
J
10
o
T = 25 C
J
C
I , Collector-to-Emitter Current (A)
1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
100
10
C
I , Collector-to-Emitter Current (A)
1
5 6 7 8 9 10 11 12
o
T = 150 C
J
o
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
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