International Rectifier IRG4PH50U Datasheet
TO-247AC
PD - 91574B
IRG4PH50U
INSULATED GATE BIPOLAR TRANSISTOR
FeaturesFeatures
Features
FeaturesFeatures
C
Ultra Fast Speed IGBT
• UltraFast: Optimized for high operating
V
frequencies up to 40 kHz in hard switching,
= 1200V
CES
>200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• Optimized for power conversion; SMPS, UPS
and welding
G
E
n-channel
V
CE(on) typ.
= 2.78V
@VGE = 15V, IC = 24A
• Industry standard TO-247AC package
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• Much lower conduction losses than MOSFETs
• More efficient than short circuit rated IGBTs
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 45
IC @ TC = 100°C Continuous Collector Current 24 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 1200 V
Pulsed Collector Current Q 180
Clamped Inductive Load Current R 180
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy S 170 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
W
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 6 (0.21) ––– g (oz)
Junction-to-Case ––– 0.64
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40
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IRG4PH50U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
E
on
E
off
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Q Repetitive rating; V
max. junction temperature. ( See fig. 13b )
R V
(See fig. 13a)
Collector-to-Emitter Breakdown Voltage 1200 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 1.20 — V/°CVGE = 0V, IC = 1.0mA
J
— 2.56 3.5 IC = 20A
Collector-to-Emitter Saturation Voltage
— 2.78 3.7 IC = 24A VGE = 15V
— 3.20 — I
V
= 45 A See Fig.2, 5
C
— 2.54 — IC = 24A , TJ = 150°C
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -13 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance U 23 35 — SVCE = 100V, IC = 24A
——250 VGE = 0V, VCE = 1200V
Zero Gate Voltage Collector Current ——2.0 µA VGE = 0V, VCE = 24V, TJ = 25°C
——5000 VGE = 0V, VCE = 1200V, TJ = 150°C
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 160 250 IC = 24A
Gate - Emitter Charge (turn-on) — 27 40 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 53 83 VGE = 15V
Turn-On Delay Time — 35 —
Rise Time — 15 — TJ = 25°C
Turn-Off Delay Time — 200 350 IC = 24A, VCC = 960V
ns
Fall Time — 290 500 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss — 0.53 — Energy losses include "tail"
Turn-Off Switching Loss — 1.41 — mJ See Fig. 9, 10, 14
Total Switching Loss — 1.94 2.6
Turn-On Delay Time — 31 — TJ = 150°C
Rise Time — 18 — IC = 24A, VCC = 960V
Turn-Off Delay Time — 320 — VGE = 15V, RG = 5.0Ω
ns
Fall Time — 280 — Energy losses include "tail"
Total Switching Loss — 5.40 — See Fig. 11, 14
mJ
Turn-On Switching Loss — 0.35 — TJ = 25°C, VGE = 15V, RG = 5.0Ω
Turn-Off Switching Loss — 1.43 — IC = 20A, VCC = 960V
Total Switching Loss
— 1.78 2.9 Energy losses include "tail"
— 4.56 — See Fig. 9, 10, 11, 14, TJ = 150°C
mJ
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 3600 — VGE = 0V
Output Capacitance — 160 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 31 —ƒ = 1.0MHz
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
= 80%(V
CC
CES
= 20V, pulse width limited by
GE
), V
= 20V, L = 10µH, RG = 5.0Ω,
GE
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IRG4PH50U
)
A
60
40
Square wave:
60 % o f r a ted
v o l tage
20
Load Current (A)
0
0.1 1 10 100
I
Ideal diodes
For both:
Duty cycle: 50%
T = 125°C
J
T = 90°C
sink
Gat e drive as spec ified
Pow er Dissipation = 40W
Triangular wave :
I
Clam p v oltage :
80 % o f rated
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
1000
100
o
T = 150 C
J
10
o
T = 25 C
J
C
I , Collector-to-Emitter Current (A)
1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
1000
100
10
C
I , Collector-to-Emitter Current (A)
1
5 6 7 8 9 10 11 12
o
T = 150 C
J
o
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
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