International Rectifier IRG4PH50S Datasheet
PD -91712A
IRG4PH50S
INSULATED GATE BIPOLAR TRANSISTOR
FeaturesFeatures
Features
FeaturesFeatures
Standard Speed IGBT
C
• Standard: Optimized for minimum saturation
=1200V
V
voltage and low operating frequencies ( < 1kHz)
CES
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
G
E
V
CE(on) typ.
= 1.47V
@VGE = 15V, IC = 33A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 57
IC @ TC = 100°C Continuous Collector Current 33 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 80
T
J
T
STG
Collector-to-Emitter Voltage 1200 V
Pulsed Collector CurrentQ 114
Clamped Inductive Load Current R 114
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche EnergyS 270 mJ
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
TO-247AC
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 6.0 (0.21) ––– g (oz)
Junction-to-Case ––– 0.64
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40
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IRG4PH50S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
DV
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Collector-to-Emitter Breakdown Voltage 1200 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0 A
/∆T
Temperature Coeff. of Breakdown Voltage — 1.22 — V/°CVGE = 0V, IC = 2.0 mA
J
— 1.47 1.7 IC = 33A VGE = 15V
Collector-to-Emitter Saturation Voltage — 1.75 — IC = 57A See Fig.2, 5
— 1.55 — IC = 33A , TJ = 150°C
V
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/DTJTemperature Coeff. of Threshold Voltage — -11 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance U 27 40 — SVCE = 100V, IC = 33A
Zero Gate Voltage Collector Current
——250 VGE = 0V, VCE = 1200V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
——1000 VGE = 0V, VCE = 1200V, TJ = 150°C
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 167 251 IC = 33A
Gate - Emitter Charge (turn-on) — 25 38 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 55 83 VGE = 15V
Turn-On Delay Time — 32 —
Rise Time — 29 — TJ = 25°C
Turn-Off Delay Time — 845 1268 IC = 33A, VCC = 960V
ns
Fall Time — 425 638 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss — 1.80 — Energy losses include "tail"
Turn-Off Switching Loss — 19.6 — mJ See Fig. 9, 10, 14
Total Switching Loss — 21.4 44
Turn-On Delay Time — 32 — TJ = 150°C,
Rise Time — 30 — IC = 33A, VCC = 960V
Turn-Off Delay Time — 1170 — VGE = 15V, RG = 5.0Ω
ns
Fall Time — 1000 — Energy losses include "tail"
Total Switching Loss — 37 — m J See Fig. 10,11,14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 3600 — VGE = 0V
Output Capacitance — 160 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 30 —ƒ = 1.0MHz
Q Repetitive rating; V
= 20V, pulse width limited by
GE
max. junction temperature. ( See fig. 13b )
R V
CC
(See fig. 13a)
= 80%(V
CES
), V
= 20V, L = 10µH, RG = 5.0Ω,
GE
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4PH50S
A
For both:
60
40
Square wave:
60% of rated
voltage
Load Current (A)
20
Ideal diodes
0
0.1 1 10
Duty cycle: 50%
T = 125°C
J
T = 90°C
sink
Gate drive as spec ified
Power Dissipation = 40W
Triangular w ave:
Clamp voltage:
80% of rated
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
1000
of fundamental)
RMS
1000
°
T = 25 C
J
100
T = 150 C
10
C
I , Collector-to-Emitter Current (A)
1
0.0 1.0 2.0 3.0 4.0 5.0
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
80µs PULSE WIDTH
J
°
GE
Fig. 2 - Typical Output Characteristics
100
T = 150 C
10
C
I , Collector-to-Emitter Current (A)
1
5 6 7 8 9 10 11 12
°
J
°
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
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