International Rectifier IRG4PH50KD Datasheet
PD- 91575B
IRG4PH50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
FeaturesFeatures
Features
FeaturesFeatures
• High short circuit rating optimized for motor control,
t
=10µs, V
sc
= 720V , TJ = 125°C,
CC
VGE = 15V
• Combines low conduction losses with high
G
switching speed
• Tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFRED
TM
ultrafast,
n-channel
ultrasoft recovery antiparallel diodes
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGPH50KD2 and IRGPH50MD2
products
• For hints see design tip 97003
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 45
IC @ TC = 100°C Continuous Collector Current 24
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 16
I
FM
t
sc
V
GE
PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
T
J
T
STG
Collector-to-Emitter Voltage 1200 V
Pulsed Collector Current Q 90 A
Clamped Inductive Load Current R 90
Diode Maximum Forward Current 90
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
C
E
TO-247AC
Short Circuit Rated
UltraFast IGBT
V
= 1200V
CES
V
CE(on) typ.
@VGE = 15V, IC = 24A
= 2.77V
W
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ––– 6 (0.21) ––– g (oz)
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Junction-to-Case - IGBT ––– ––– 0.64
Junction-to-Case - Diode ––– ––– 0.83 °C/W
Case-to-Sink, flat, greased surface ––– 0.24 –––
Junction-to-Ambient, typical socket mount ––– ––– 40
7/7/2000
IRG4PH50KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
2 www.irf.com
Collector-to-Emitter Breakdown VoltageS 1200 —— VVGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage — 0.91 — V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 2.77 3.5 IC = 24A VGE = 15V
— 3.28 — VIC = 45A See Fig. 2, 5
— 2.54 — IC = 24A, TJ = 150°C
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -10 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance T 13 19 — SVCE = 100V, IC = 24A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 1200V
——6500 VGE = 0V, VCE = 1200V, TJ = 150°C
Diode Forward Voltage Drop — 2.5 3.5 V IC = 16A See Fig. 13
— 2.1 3.0 IC = 16A, TJ = 150°C
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Total Gate Charge (turn-on) — 180 270 IC = 24A
Gate - Emitter Charge (turn-on) — 25 38 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 70 110 VGE = 15V
Turn-On Delay Time — 87 —
Rise Time — 100 — TJ = 25°C
Turn-Off Delay Time — 140 300 IC = 24A, VCC = 800V
ns
Fall Time — 200 300 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss — 3.83 — Energy losses include "tail"
Turn-Off Switching Loss — 1.90 — mJ and diode reverse recovery
Total Switching Loss — 5.73 7.9 See Fig. 9,10,18
Short Circuit Withstand Time 10 —— µs VCC = 720V, TJ = 125°C
VGE = 15V, RG = 5.0Ω
Turn-On Delay Time — 67 — TJ = 150°C, See Fig. 10,11,18
Rise Time — 72 — IC = 24A, VCC = 800V
Turn-Off Delay Time — 310 — VGE = 15V, RG = 5.0Ω,
ns
Fall Time — 390 — Energy losses include "tail"
Total Switching Loss — 8.36 — mJ and diode reverse recovery
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 2800 — VGE = 0V
Output Capacitance — 140 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 53 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 90 135 ns TJ = 25°C See Fig.
— 164 245 TJ = 125°C 14 IF = 16A
Diode Peak Reverse Recovery Current — 5.8 10 A TJ = 25°C See Fig.
— 8.3 15 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge — 260 675 nC TJ = 25°C See Fig.
— 680 1838 TJ = 125°C 16 di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 120 — A/µs TJ = 25°C See Fig.
During t
b
— 76 — TJ = 125°C 17
IRG4PH50KD
30
25
20
15
10
Square wave:
60 % of ra ted
v olta ge
I
For both:
Duty cycle: 50%
T = 125° C
J
T = 9 0 ° C
sink
Gate drive as specified
Power Dissipation = W
40
LOAD CURRENT (A)
5
0
0.1 1 10 100
Ideal diodes
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
100
of fundamental)
RMS
100
°
T = 150 C
J
10
°
T = 25 C
J
C
I , Collector-to-Emitter Current (A)
1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
10
C
I , Collector-to-Emitter Current (A)
1
Fig. 3 - Typical Transfer Characteristics
J
°
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
5 6 7 8 9 10 11 12
V , Gate-to-Emitter Voltage (V)
GE
°
T = 150 C
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