International Rectifier IRG4PH50K Datasheet
PD - 9.1576
IRG4PH50K
INSULATED GATE BIPOLAR TRANSISTOR
Features
● High short circuit rating optimized for motor control,
tsc =10µs, V
● Combines low conduction losses with high
switching speed
● Latest generation design provides tighter
parameter distribution and higher efficiency than
previous generations
= 720V, TJ = 125°C, VGE = 15V
CC
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
V
= 1200V
CES
V
CE(on) typ.
@VGE = 15V, IC = 24A
= 2.77V
Benefits
● As a Freewheeling Diode we recommend our HEXFRED
ultrafast, ultrasoft recovery diodes for minimum EMI/Noise
and switching losses in the Diode and IGBT
● Latest generation 4 IGBTs offer highest power density
motor controls possible
● This part replaces the IRGPH50K and IRGPH50M devices
TM
TO-247 AB
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 45
IC @ TC = 100°C Continuous Collector Current 24 A
I
CM
I
LM
t
sc
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 78
T
J
T
STG
Collector-to-Emitter Voltage 1200 V
Pulsed Collector Current ➀ 90
Clamped Inductive Load Current ➁ 90
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy ➂ 190 mJ
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 6 (0.21) — g (oz)
Junction-to-Case — 0.64
Case-to-Sink, Flat, Greased Surface 0.24 — °C/W
Junction-to-Ambient, typical socket mount — 40
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IRG4PH50K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
➀ Repetitive rating; V
junction temperature. (see figure 13b)
➁ V
CC
(see figure 13a)
Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.91 — V/°C VGE = 0V, IC = 2.0mA
J
— 2.77 3.5 IC = 24A VGE = 15V
Collector-to-Emitter Saturation Voltage — 3.28 — IC = 45A see figures 2, 5
— 2.54 — IC = 24A , TJ = 150°C
V
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -10 — mV/°C VCE = VGE, IC = 2.0mA
Forward Transconductance 13 19 — S VCE = 100 V, IC = 24A
Zero Gate Voltage Collector Current
— — 250 VGE = 0V, VCE = 1200V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
— — 5000 VGE = 0V, VCE = 1200V, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 180 270 IC = 24A
Gate - Emitter Charge (turn-on) — 25 38 nC VCC = 400V see figure 8
Gate - Collector Charge (turn-on) — 70 110 VGE = 15V
Turn-On Delay Time — 36 —
Rise Time — 27 — TJ = 25°C
Turn-Off Delay Time — 200 300 IC = 24A, VCC = 960V
ns
Fall Time — 130 190 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss — 1.21 — Energy losses include "tail"
Turn-Off Switching Loss — 2.25 — m J see figures 9,10,14
Total Switching Loss — 3.46 4.1
Short Circuit Withstand Time 10 — — µs VCC = 720V, TJ = 125°C
VGE = 15V, RG = 5.0Ω
Turn-On Delay Time — 35 — TJ = 150°C,
Rise Time — 29 — IC = 24A, VCC = 960V
Turn-Off Delay Time — 380 — VGE = 15V, RG = 5.0Ω
ns
Fall Time — 280 — Energy losses include "tail"
Total Switching Loss — 7.80 — mJ see figures 10,11,14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 2800 — VGE = 0V
Output Capacitance — 140 — pF VCC = 30V see figure 7
Reverse Transfer Capacitance — 53 — ƒ = 1.0MHz
= 80% (V
= 20V, pulse width limited bymax.
GE
), V
CES
= 20V, L = 10µH, RG = 5.0Ω,
GE
➂ Repetitive rating; pulse width limited by maximum
junction temperature.
➃ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
➄ Pulse width 5.0µs, single shot.
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