International Rectifier IRG4PH40UD Datasheet
PD- 91621B
TO-247AC
IRG4PH40UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
FeaturesFeatures
Features
FeaturesFeatures
• UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter
parameter distribution and higher efficiency than
previous generations
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
G
n-channel
bridge configurations
• Industry standard TO-247AC package
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 41
IC @ TC = 100°C Continuous Collector Current 21
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 8.0
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 160
PD @ TC = 100°C Maximum Power Dissipation 65
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 1200 V
Pulsed Collector Current Q 82
Clamped Inductive Load Current R 82 A
Diode Maximum Forward Current 130
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
C
E
V
= 1200V
CES
V
CE(on) typ.
= 2.43V
@VGE = 15V, IC = 21A
W
°C
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ––– 6 (0.21) ––– g (oz)
Junction-to-Case - IGBT ––– ––– 0.77
Junction-to-Case - Diode ––– ––– 1.7 °C/W
Case-to-Sink, flat, greased surface ––– 0.24 –––
Junction-to-Ambient, typical socket mount ––– ––– 40
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7/7/2000
IRG4PH40UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Qge Gate - Emitter Charge (turn-on) — 13 20 nC VCC = 400V See Fig. 8
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Collector-to-Emitter Breakdown VoltageS 1200 —— VVGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage — 0.43 — V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 2.43 3.1 IC = 21A VGE = 15V
— 2.97 — VIC = 41A See Fig. 2, 5
— 2.47 — IC = 21A, TJ = 150°C
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance T 16 24 — SVCE = 100V, IC = 21A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 600V
——5000 VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop — 2.6 3.3 V IC = 8.0A See Fig. 13
— 2.4 3.1 IC = 8.0A, TJ = 125°C
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Total Gate Charge (turn-on) — 86 130 IC = 21A
Gate - Collector Charge (turn-on) — 29 44 VGE = 15V
Turn-On Delay Time — 46 — TJ = 25°C
Rise Time — 35 — ns IC = 21A, VCC = 800V
Turn-Off Delay Time — 97 150 VGE = 15V, RG = 10Ω
Fall Time — 240 360 Energy losses include "tail" and
Turn-On Switching Loss — 1.80 — diode reverse recovery.
Turn-Off Switching Loss — 1.93 — mJ See Fig. 9, 10, 18
Total Switching Loss — 3.73 4.6
Turn-On Delay Time — 42 — TJ = 150°C, See Fig. 11, 18
Rise Time — 32 — ns IC = 21A, VCC = 800V
Turn-Off Delay Time — 240 — VGE = 15V, RG = 10Ω
Fall Time — 510 — Energy losses include "tail" and
Total Switching Loss — 7.04 — mJ diode reverse recovery.
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 1800 — VGE = 0V
Output Capacitance — 120 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 18 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 63 95 ns TJ = 25°C See Fig.
— 106 160 TJ = 125°C 14 IF = 8.0A
Diode Peak Reverse Recovery Current — 4.5 8.0 A TJ = 25°C See Fig.
— 6.2 11 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge — 140 380 nC TJ = 25°C See Fig.
— 335 880 TJ = 125°C 16 di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 133 — A/µs TJ = 25°C See Fig.
During t
b
— 85 — TJ = 125°C 17
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IRG4PH40UD
25
For both:
Duty cycle: 50%
20
15
Square wave:
60 % of ra ted
10
v olta ge
I
LOAD CURRENT (A)
5
0
0.1 1 10 100
Ideal diodes
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
T = 125°C
J
T = 90 ° C
sink
Gate drive as specified
Pow er Dissipation = W
35
100
o
T = 150 C
J
10
o
T = 25 C
J
C
I , Collector-to-Emitter Current (A)
1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
100
o
T = 150 C
J
10
o
T = 25 C
J
C
I , Collector-to-Emitter Current (A)
1
5 6 7 8 9 10
V , Gate-to-Emitter Voltage (V)
GE
V = 50V
CC
5µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
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