International Rectifier IRG4PH40KD Datasheet
PD- 91577B
IRG4PH40KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
FeaturesFeatures
Features
FeaturesFeatures
• High short circuit rating optimized for motor control,
tsc =10µs, V
= 720V , TJ = 125°C,
CC
VGE = 15V
• Combines low conduction losses with high
G
switching speed
• Tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFRED
TM
ultrafast,
n-channel
ultrasoft recovery antiparallel diodes
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGPH40KD2 and IRGPH40MD2
products
• For hints see design tip 97003
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 30
IC @ TC = 100°C Continuous Collector Current 15
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 8.0
I
FM
t
sc
V
GE
PD @ TC = 25°C Maximum Power Dissipation 160
PD @ TC = 100°C Maximum Power Dissipation 65
T
J
T
STG
Collector-to-Emitter Voltage 1200 V
Pulsed Collector Current Q 60 A
Clamped Inductive Load Current R 60
Diode Maximum Forward Current 130
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
C
E
TO-247AC
Short Circuit Rated
UltraFast IGBT
V
= 1200V
CES
V
CE(on) typ.
@VGE = 15V, IC = 15A
= 2.74V
W
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ––– 6 (0.21) ––– g (oz)
Junction-to-Case - IGBT ––– ––– 0.77
Junction-to-Case - Diode ––– ––– 1.7 °C/W
Case-to-Sink, flat, greased surface ––– 0.24 –––
Junction-to-Ambient, typical socket mount ––– ––– 40
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2/7/2000
IRG4PH40KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
2 www.irf.com
Collector-to-Emitter Breakdown VoltageS 1200 —— VVGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage — 0.37 — V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 2.74 3.4 IC = 15A VGE = 15V
— 3.29 — VIC = 30A See Fig. 2, 5
— 2.53 — IC = 15A, TJ = 150°C
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -3.3 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance T 8.0 12 — SVCE = 100V, IC = 15A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 1200V
——3000 VGE = 0V, VCE = 1200V, TJ = 150°C
Diode Forward Voltage Drop — 2.6 3.3 V IC = 8.0A See Fig. 13
— 2.4 3.1 IC = 8.0A, TJ = 125°C
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Total Gate Charge (turn-on) — 94 140 IC = 15A
Gate - Emitter Charge (turn-on) — 14 22 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 37 55 VGE = 15V
Turn-On Delay Time — 50 —
Rise Time — 31 — TJ = 25°C
Turn-Off Delay Time — 96 140 IC = 15A, VCC = 800V
ns
Fall Time — 220 330 VGE = 15V, RG = 10Ω
Turn-On Switching Loss — 1.31 — Energy losses include "tail"
Turn-Off Switching Loss — 1.12 — mJ and diode reverse recovery
Total Switching Loss — 2.43 2.8 See Fig. 9,10,18
Short Circuit Withstand Time 10 —— µs VCC = 720V, TJ = 125°C
VGE = 15V, RG = 10Ω , V
Turn-On Delay Time — 49 — TJ = 150°C, See Fig. 10,11,18
Rise Time — 33 — IC = 15A, VCC = 800V
Turn-Off Delay Time — 290 — VGE = 15V, RG = 10Ω,
ns
Fall Time — 440 — Energy losses include "tail"
Total Switching Loss — 5.1 — mJ and diode reverse recovery
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 1600 — VGE = 0V
Output Capacitance — 77 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 26 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 63 95 ns TJ = 25°C See Fig.
— 106 160 TJ = 125°C 14 IF = 8.0A
Diode Peak Reverse Recovery Current — 4.5 8.0 A TJ = 25°C See Fig.
— 6.2 11 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge — 140 380 nC TJ = 25°C See Fig.
— 335 880 TJ = 125°C 16 di/dt = 200Aµs
/dt Diode Peak Rate of Fall of Recovery — 133 — A/µs TJ = 25°C See Fig.
During t
b
— 85 — TJ = 125°C 17
CPK
< 500V
IRG4PH40KD
25
For both:
Duty cycle: 50%
T = 125°C
20
15
Square wave:
60 % of ra ted
v olta ge
10
I
LOAD CURRENT (A)
5
0
0.1 1 10 100
Ideal diodes
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
J
T = 90 ° C
sink
Gate drive as specified
Pow er Dissipation = W
35
100
°
T = 150 C
10
C
I , Collector-to-Emitter Current (A)
1
1 10
J
°
T = 25 C
J
V = 15V
GE
20µs PULSE WIDTH
V , Collector-to-Emitter Voltage (V)
CE
Fig. 2 - Typical Output Characteristics
100
°
T = 150 C
J
10
°
T = 25 C
J
C
I , Collector-to-Emitter Current (A)
1
4 6 8 10 12 14
V , Gate-to-Emitter Voltage (V)
GE
V = 50V
CC
5µs PULSE WIDTH
Fig. 3 - Typical Transfer Characteristics
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