International Rectifier IRG4PH30KD Datasheet

PD- 91579A

IRG4PH30KD

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE

FeaturesFeatures

Features

FeaturesFeatures

• High short circuit rating optimized for motor control,
t

=10µs, V

sc

= 720V , TJ = 125°C,

CC

VGE = 15V

• Combines low conduction losses with high

G

switching speed

• Tighter parameter distribution and higher efficiency
than previous generations

• IGBT co-packaged with HEXFRED

TM

ultrafast,

n-channel

ultrasoft recovery antiparallel diodes

Benefits

• Latest generation 4 IGBT's offer highest power density
motor controls possible

• HEXFRED

TM

diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses

• This part replaces IRGPH30MD2 products

• For hints see design tip 97003

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 20
IC @ TC = 100°C Continuous Collector Current 10
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 10
I

FM

t

sc

V

GE

PD @ TC = 25°C Maximum Power Dissipation 100
PD @ TC = 100°C Maximum Power Dissipation 42
T

J

T

STG

Collector-to-Emitter Voltage 1200 V

Pulsed Collector Current Q 40 A
Clamped Inductive Load Current R 40

Diode Maximum Forward Current 40
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

C

E

TO-247AC

Short Circuit Rated

UltraFast IGBT

V

= 1200V

CES

V

CE(on) typ.

@VGE = 15V, IC = 10A

= 3.10V

W

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight ––– 6 (0.21) ––– g (oz)

Junction-to-Case - IGBT ––– ––– 1.2
Junction-to-Case - Diode ––– ––– 2.5 °C/W
Case-to-Sink, flat, greased surface ––– 0.24 –––
Junction-to-Ambient, typical socket mount ––– ––– 40

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2/7/2000

IRG4PH30KD

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

sc

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

2 www.irf.com

Collector-to-Emitter Breakdown VoltageS 1200 —— VVGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage — 0.19 — V/°CVGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 3.10 4.2 IC = 10A VGE = 15V

— 3.90 — VIC = 20A See Fig. 2, 5
— 3.01 — IC = 10A, TJ = 150°C

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -12 — mV/°CVCE = VGE, IC = 250µA

Forward Transconductance T 4.3 6.5 — SVCE = 100V, IC = 10A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 1200V

——3500 VGE = 0V, VCE = 1200V, TJ = 150°C

Diode Forward Voltage Drop — 3.4 3.8 V IC = 10A See Fig. 13

— 3.3 3.7 IC = 10A, TJ = 150°C

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 53 80 IC = 10A
Gate - Emitter Charge (turn-on) — 9.0 14 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 21 32 VGE = 15V
Turn-On Delay Time — 39 —
Rise Time — 84 — TJ = 25°C
Turn-Off Delay Time — 220 340 IC = 10A, VCC = 800V

ns

Fall Time — 90 140 VGE = 15V, RG = 23Ω
Turn-On Switching Loss — 0.95 — Energy losses include "tail"
Turn-Off Switching Loss — 1.15 — mJ and diode reverse recovery
Total Switching Loss — 2.10 2.6 See Fig. 9,10,18
Short Circuit Withstand Time 10 —— µs VCC = 720V, TJ = 125°C

VGE = 15V, RG = 5.0Ω
Turn-On Delay Time — 42 — TJ = 150°C, See Fig. 10,11,18
Rise Time — 79 — IC = 10A, VCC = 800V
Turn-Off Delay Time — 540 — VGE = 15V, RG = 23Ω,

ns

Fall Time — 97 — Energy losses include "tail"
Total Switching Loss — 3.5 — mJ and diode reverse recovery
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 800 — VGE = 0V
Output Capacitance — 60 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 14 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 50 76 ns TJ = 25°C See Fig.

— 72 110 TJ = 125°C 14 IF = 10A

Diode Peak Reverse Recovery Current — 4.4 7.0 A TJ = 25°C See Fig.

— 5.9 8.8 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 130 200 nC TJ = 25°C See Fig.

— 250 380 TJ = 125°C 16 di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery — 210 — A/µs TJ = 25°C See Fig.

During t

b

— 180 — TJ = 125°C 17

IRG4PH30KD

15

For both:

Duty cycle: 50%
T = 125° C

J

T = 9 0 ° C

sink

10

Square wave:

60 % of rate d
v olta ge

Gate drive as specified

Power Dissipation = W

24

5

I

LOAD CURRENT (A)

Ideal diodes

0

0.1 1 10 100

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

100

10

°

T = 150 C



J

°

T = 25 C



J

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE



20µs PULSE WIDTH

of fundamental)

RMS

100

10

°

T = 150 C



J

C

I , Collector-to-Emitter Current (A)

1

6 8 10 12 14

V , Gate-to-Emitter Voltage (V)

GE

°

T = 25 C



J

V = 50V

CC



5µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

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