International Rectifier IRG4PH30K Datasheet
PD -91580A
IRG4PH30K
INSULATED GATE BIPOLAR TRANSISTOR
FeaturesFeatures
Features
FeaturesFeatures
• High short circuit rating optimized for motor control,
=10µs, V
t
sc
V
= 15V
GE
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
= 720V , TJ = 125°C,
CC
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
V
= 1200V
CES
V
CE(on) typ.
@VGE = 15V, IC = 10A
= 3.10V
Benefits
• As a Freewheeling Diode we recommend our
HEXFRED
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
• This part replaces the IRGPH30K and IRGPH30M
devices
TM
ultrafast, ultrasoft recovery diodes for
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 20
IC @ TC = 100°C Continuous Collector Current 10 A
I
CM
I
LM
t
sc
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
T
J
T
STG
Collector-to-Emitter Voltage 1200 V
Pulsed Collector Current Q 40
Clamped Inductive Load Current R 40
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy S 121 mJ
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 6 (0.21) ––– g (oz)
Junction-to-Case ––– 1.2
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40
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2/7/2000
IRG4PH30K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Q Repetitive rating; V
max. junction temperature. ( See fig. 13b )
R V
(See fig. 13a)
Collector-to-Emitter Breakdown Voltage 1200 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.19 — V/°CVGE = 0V, IC = 2.0mA
J
— 3.10 4.2 IC = 10A VGE = 15V
Collector-to-Emitter Saturation Voltage — 3.90 — IC = 20A See Fig.2, 5
— 3.01 — IC = 10A , TJ = 150°C
V
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -12 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance U 4.3 6.5 — SVCE = 100 V, IC = 10A
Zero Gate Voltage Collector Current
——250 VGE = 0V, VCE = 1200V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
——2000 VGE = 0V, VCE = 1200V, TJ = 150°C
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 53 80 IC = 10A
Gate - Emitter Charge (turn-on) — 9.0 14 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 21 32 VGE = 15V
Turn-On Delay Time — 28 —
Rise Time — 23 — TJ = 25°C
Turn-Off Delay Time — 200 300 IC =10A, VCC = 960V
ns
Fall Time — 110 170 VGE = 15V, RG = 23Ω
Turn-On Switching Loss — 0.64 — Energy losses include "tail"
Turn-Off Switching Loss — 0.92 — mJ See Fig. 9,10,14
Total Switching Loss — 1.56 2.4
Short Circuit Withstand Time 10 —— µs VCC = 720V, TJ = 125°C
VGE = 15V, RG = 23Ω
Turn-On Delay Time — 27 — TJ = 150°C,
Rise Time — 26 — IC = 10A, VCC = 960V
Turn-Off Delay Time — 310 — VGE = 15V, RG = 23Ω
ns
Fall Time — 330 — Energy losses include "tail"
Total Switching Loss — 3.18 — mJ See Fig. 10,11,14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 800 — VGE = 0V
Output Capacitance — 60 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 14 —ƒ = 1.0MHz
= 80%(V
CC
CES
= 20V, pulse width limited by
GE
), V
= 20V, L = 10µH, RG =23Ω,
GE
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
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IRG4PH30K
30
25
20
Square wave:
15
10
Load Current ( A )
5
0
0.1 1 10 100
60% of rated
voltage
Ideal diodes
For both:
Duty cycle: 50%
T = 125° C
J
T = 9 0° C
sink
Gate drive as specified
Power Dissipation = 40W
24
Triangular wave:
Clamp voltage:
80% of rated
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
A
100
10
°
T = 150 C
J
°
T = 25 C
J
C
I , Collector-to-Emitter Current (A)
1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
100
10
T = 150 C
C
I , Collector-to-Emitter Current (A)
1
6 8 10 12 14
°
J
°
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
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