International Rectifier IRG4PH20K Datasheet
PD -91776
IRG4PH20K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control,
tsc =10µs, V
= 720V , TJ = 125°C,
CC
C
Short Circuit Rated
UltraFast IGBT
V
= 1200V
CES
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
G
E
n-channel
V
CE(on) typ.
= 3.17V
@VGE = 15V, IC = 5.0A
Benefits
• As a Freewheeling Diode we recommend our
HEXFRED
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
TM
ultrafast, ultrasoft recovery diodes for
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 11
IC @ TC = 100°C Continuous Collector Current 5.0 A
I
CM
I
LM
t
sc
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C Maximum Power Dissipation 24
T
J
T
STG
Collector-to-Emitter Voltage 1200 V
Pulsed Collector Current 22
Clamped Inductive Load Current 22
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 130 mJ
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 6 (0.21) ––– g (oz)
Junction-to-Case ––– 2.1
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40
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6/25/98
IRG4PH20K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Repetitive rating; V
max. junction temperature. ( See fig. 13b )
V
(See fig. 13a)
Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 1.13 — V/°C VGE = 0V, IC = 2.5mA
J
— 3.17 4.3 IC = 5.0A VGE = 15V
Collector-to-Emitter Saturation Voltage — 4.04 — IC = 11A See Fig.2, 5
— 2.84 — IC = 5.0A , TJ = 150°C
V
Gate Threshold Voltage 3.5 — 6.5 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -10 — mV/°C VCE = VGE, IC = 1mA
Forward Transconductance 2.3 3.5 — S VCE = 100 V, IC = 5.0A
Zero Gate Voltage Collector Current
— — 250 VGE = 0V, VCE = 1200V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
— — 1000 VGE = 0V, VCE = 1200V, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 28 43 IC = 5.0A
Gate - Emitter Charge (turn-on) — 4.4 6.6 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 1 2 18 VGE = 15V
Turn-On Delay Time — 23 —
Rise Time — 2 6 — TJ = 25°C
Turn-Off Delay Time — 93 140 IC =5.0A, VCC = 960V
ns
Fall Time — 270 400 VGE = 15V, RG = 50Ω
Turn-On Switching Loss — 0.45 — Energy losses include "tail"
Turn-Off Switching Loss — 0.44 — mJ See Fig. 9,10,14
Total Switching Loss — 0.89 1.2
Short Circuit Withstand Time 10 — — µ s VCC = 720V, TJ = 125°C
VGE = 15V, RG = 50Ω
Turn-On Delay Time — 23 — TJ = 150°C,
Rise Time — 2 8 — IC = 5.0A, VCC = 960
Turn-Off Delay Time — 100 — VGE = 15V, RG = 50Ω
ns
Fall Time — 62 0 — Energy losses include "tail"
Total Switching Loss — 1.7 — m J See Fig. 10,11,14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 435 — VGE = 0V
Output Capacitance — 44 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 8.3 — ƒ = 1.0MHz
= 80%(V
CC
CES
= 20V, pulse width limited by
GE
), V
= 20V, L = 10µH, RG =50Ω,
GE
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
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IRG4PH20K
16
12
8
Square wave:
60% of rated
voltage
For both:
Duty cycle: 50%
T = 125˚ C
J
T = 90˚C
sink
Gate drive as specified
Power Di ssipation = 15W
Triangular wave:
Clamp voltage:
80% of rated
Load Current ( A )
4
Ideal diodes
0
0.1 1 10 100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
A
100
10
T = 150 C
1
C
I , Collector-to-Emitter Current (A)
0.1
1 10
°
J
°
T = 25 C
J
V = 15V
GE
20µs PULSE WIDTH
V , Collector-to-Emitter Voltage (V)
CE
Fig. 2 - Typical Output Characteristics
100
10
T = 150 C
C
I , Collector-to-Emitter Current (A)
1
6 8 10 12 14
°
J
°
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
Fig. 3 - Typical Transfer Characteristics
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