International Rectifier IRG4PC50W Datasheet
INSULATED GATE BIPOLAR TRANSISTOR
TO-247AC
PD - 91657B
IRG4PC50W
FeaturesFeatures
Features
FeaturesFeatures
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
C
V
= 600V
CES
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
G
E
n-channel
V
CE(on) max.
= 2.30V
@VGE = 15V, IC = 27A
tighter parameters distribution, exceptional reliability
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >300 kHz)
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 55
IC @ TC = 100°C Continuous Collector Current 27 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 600 V
Pulsed Collector Current Q 220
Clamped Inductive Load Current R 220
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy S 170 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
W
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 6 (0.21) ––– g (oz)
Junction-to-Case ––– 0.64
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40
www.irf.com 1
2/7/2000
IRG4PC50W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)CES
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.41 — V/°CVGE = 0V, IC = 5.0mA
J
— 1.93 2.3 IC = 27A VGE = 15V
Collector-to-Emitter Saturation Voltage — 2.25 — IC = 55A See Fig.2, 5
— 1.71 — IC = 27A , TJ = 150°C
V
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°CVCE = VGE, IC = 1.0mA
Forward Transconductance U 27 41 — SVCE = 100 V, IC = 27A
Zero Gate Voltage Collector Current
——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
——5000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 180 270 IC = 27A
Gate - Emitter Charge (turn-on) — 24 36 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 63 95 VGE = 15V
Turn-On Delay Time — 46 —
Rise Time — 33 — TJ = 25°C
Turn-Off Delay Time — 120 180 IC = 27A, VCC = 480V
ns
Fall Time — 57 86 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss — 0.08 — Energy losses include "tail"
Turn-Off Switching Loss — 0.32 — mJ See Fig. 9, 10, 14
Total Switching Loss — 0.40 0.5
Turn-On Delay Time — 31 — TJ = 150°C,
Rise Time — 43 — IC = 27A, VCC = 480V
Turn-Off Delay Time — 210 — VGE = 15V, RG = 5.0Ω
ns
Fall Time — 62 — Energy losses include "tail"
Total Switching Loss — 1.14 — mJ See Fig. 10,11, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 3700 — VGE = 0V
Output Capacitance — 260 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 68 —ƒ = 1.0MHz
Q Repetitive rating; V
= 20V, pulse width limited by
GE
max. junction temperature. ( See fig. 13b )
R V
CC
(See fig. 13a)
= 80%(V
CES
), V
= 20V, L = 10µH, RG = 5.0Ω,
GE
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2 www.irf.com
IRG4PC50W
)
100
80
60
40
Square wave:
60% of rated
voltage
For both:
Duty cycle: 50%
T = 125°C
J
T = 90 °C
sink
Gate drive as specified
Power D issipation = 40W
Triangular wave:
Clamp voltage:
80% of rated
Load Current ( A )
20
0
0.1 1 10 100 1000
Ideal diodes
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
A
1000
100
°
T = 150 C
J
°
T = 25 C
CE
J
V = 15V
20µs PULSE WIDTH
GE
10
C
I , Collector-to-Emitter Current (A)
1
1 10
V , Collector-to-Emitter Voltage (V)
1000
100
10
C
I , Collector-to-Emitter Current (A)
1
5 6 7 8 9 10 11
°
T = 150 C
J
°
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
V , Gate-to-Emitter Voltage (V)
GE
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
www.irf.com 3
Loading...