International Rectifier IRG4PC50U Datasheet
PD 91470F
TO-247AC
IRG4PC50U
INSULATED GATE BIPOLAR TRANSISTOR
FeaturesFeatures
Features
FeaturesFeatures
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
UltraFast Speed IGBT
C
V
CES
= 600V
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
G
E
V
CE(on) typ.
= 1.65V
@VGE = 15V, IC = 27A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 55
IC @ TC = 100°C Continuous Collector Current 27 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 600 V
Pulsed Collector Current Q 220
Clamped Inductive Load Current R 220
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy S 20 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
W
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 6 (0.21) ---- g (oz)
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Junction-to-Case ---- 0.64
Case-to-Sink, Flat, Greased Surface 0.24 ---- °C/W
Junction-to-Ambient, typical socket mount ---- 40
12/30/00
IRG4PC50U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 ---- ---- V VGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/°CVGE = 0V, IC = 1.0mA
J
---- 1.65 2.0 IC = 27A VGE = 15V
Collector-to-Emitter Saturation Voltage ---- 2.0 ---- IC = 55A See Fig.2, 5
---- 1.6 ---- I
V
= 27A , TJ = 150°C
C
Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ---- -13 ---- mV/°CVCE = VGE, IC = 250µA
Forward Transconductance U 16 24 ---- S VCE ≥ 15V, IC = 27A
Zero Gate Voltage Collector Current
---- ---- 250 VGE = 0V, VCE = 600V
---- ---- 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
---- ---- 5000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) ---- 180 270 IC = 27A
Gate - Emitter Charge (turn-on) ---- 25 38 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) ---- 61 90 VGE = 15V
Turn-On Delay Time ---- 32 ---Rise Time ---- 20 ---- TJ = 25°C
Turn-Off Delay Time ---- 170 260 IC = 27A, VCC = 480V
ns
Fall Time ---- 88 130 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss ---- 0.12 ---- Energy losses include "tail"
Turn-Off Switching Loss ---- 0.54 ---- mJ See Fig. 10, 11, 13, 14
Total Switching Loss ---- 0.66 0.9
Turn-On Delay Time ---- 31 ---- TJ = 150°C,
Rise Time ---- 23 ---- IC = 27A, VCC = 480V
Turn-Off Delay Time ---- 230 ---- VGE = 15V, RG = 5.0Ω
ns
Fall Time ---- 120 ---- Energy losses include "tail"
Total Switching Loss ---- 1.6 ---- mJ See Fig. 13, 14
Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
Input Capacitance ---- 4000 ---- VGE = 0V
Output Capacitance ---- 250 ---- pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ---- 52 ---- ƒ = 1.0MHz
Q Repetitive rating; V
= 20V, pulse width limited by
GE
max. junction temperature. ( See fig. 13b )
R V
CC
(See fig. 13a)
= 80%(V
CES
), V
= 20V, L = 10µH, RG = 5.0Ω,
GE
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4PC50U
)
µ
)
)
A
80
60
40
Square wave:
60% of rated
volta g e
For both:
Duty cycle: 50%
T = 125°C
J
T = 9 0 °C
sink
Gate drive as specified
Pow e r D issipation = 40W
Triangular wave:
Clamp voltage:
80% of rated
Load C urrent (A)
20
Ideal diodes
0
0.1 1 10 100
f, F requency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
1000
of fundamental; for triangular wave, I=IPK)
RMS
1000
100
100
T = 150°C
T = 150°C
10
1
C
I , Collector-to-E m itter Curren t (A)
0.1
0110
V , Colle cto r-to-E mitter V o ltage (V
CE
J
T = 25°C
J
V = 15V
GE
20
s PULSE WIDTH
A
Fig. 2 - Typical Output Characteristics
C
I , Colle cto r-to-E mitter C u rre nt (A )
Fig. 3 - Typical Transfer Characteristics
J
T = 25°C
10
1
4 6 8 10 12
V , G ate -to -E m itter V o ltage (V
GE
J
V = 1 0 V
CC
5µs PULSE WIDTH
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A
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