International Rectifier IRG4PC50S Datasheet

PD - 91581A

TO-247AC

IRG4PC50S

INSULATED GATE BIPOLAR TRANSISTOR

FeaturesFeatures

Features

FeaturesFeatures

• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)

Standard Speed IGBT

C

= 600V

V

CES

• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3

• Industry standard TO-247AC package

G

E

V

CE(on) typ.

= 1.28V

@VGE = 15V, IC = 41A

n-channel

Benefits

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 70
IC @ TC = 100°C Continuous Collector Current 41 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
T

J

T

STG

Collector-to-Emitter Breakdown Voltage 600 V

Pulsed Collector Current Q 140
Clamped Inductive Load Current R 140
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy S 20 mJ

Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

W

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Wt Weight 6.0 (0.21) ––– g (oz)

Junction-to-Case ––– 0.64
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40

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2/7/2000

IRG4PC50S

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(ON)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Notes:

Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.75 — V/°CVGE = 0V, IC = 1.0mA

J

— 1.28 1.36 IC = 41A VGE = 15V

Collector-to-Emitter Saturation Voltage — 1.62 — IC = 80A See Fig.2, 5

— 1.28 — IC = 41A , TJ = 150°C

V

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -9.3 — mV/°CVCE = VGE, IC = 250µA

Forward Transconductance U 17 34 — SVCE = 100V, IC = 41A

Zero Gate Voltage Collector Current

——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C

µA

——1000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge (turn-on) — 180 280 IC = 41A
Gate - Emitter Charge (turn-on) — 24 37 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 61 92 VGE = 15V
Turn-On Delay Time — 33 —
Rise Time — 30 — TJ = 25°C
Turn-Off Delay Time — 650 980 IC = 41A, VCC = 480V

ns

Fall Time — 400 600 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss — 0.72 — Energy losses include "tail"
Turn-Off Switching Loss — 8.27 — mJ See Fig. 9, 10, 14
Total Switching Loss — 8.99 13
Turn-On Delay Time — 31 — TJ = 150°C,
Rise Time — 31 — IC = 41A, VCC = 480V
Turn-Off Delay Time — 1080 — VGE = 15V, RG = 5.0Ω

ns

Fall Time — 620 — Energy losses include "tail"
Total Switching Loss — 15 — m J See Fig. 11, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 4100 — VGE = 0V
Output Capacitance — 250 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 48 —ƒ = 1.0MHz

Q Repetitive rating; V

= 20V, pulse width limited by

GE

max. junction temperature. ( See fig. 13b )

R V

CC

(See fig. 13a)

= 80%(V

CES

), V

= 20V, L = 10µH, RG = 5.0Ω,

GE

T Pulse width ≤ 80µs; duty factor ≤ 0.1%.

U Pulse width 5.0µs, single shot.

S Repetitive rating; pulse width limited by maximum

junction temperature.

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IRG4PC50S

)

100

80

60

Square wave:

60% of rated

40

Load Current ( A )

20

0

0.1 1 10 100

voltag e

I

Ideal diodes

For both:

Duty cyc le: 50%
T = 125° C

J

T = 90 °C

sink

Gate drive as specified

Power Dissipation = 40W

Triangular wave:

I

Clamp vo ltage:
80% of rated

f, Frequency (kHz

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

A

1000

100

10

o

T = 150 C



J

C

I , Collector-to-Emitter Current (A)

1

0.1 1 10

V , Collector-to-Emitter Voltage (V)

CE

o

T = 25 C



J

V = 15V

GE



20µs PULSE WIDTH

1000

100

o

T = 150 C



J

10

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10

V , Gate-to-Emitter Voltage (V)

GE

o

T = 25 C



J

V = 50V

CC



5µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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