International Rectifier IRG4PC50K Datasheet

PD - 91583B

IRG4PC50K

INSULATED GATE BIPOLAR TRANSISTOR

FeaturesFeatures

Features

FeaturesFeatures

• High short circuit rating optimized for motor control,
=10µs, @360V VCE (start), TJ = 125°C,

t

sc

VGE = 15V

• Combines low conduction losses with high

switching speed

• Latest generation design provides tighter parameter

distribution and higher efficiency than previous
generations

G

n-channel

C

E

Benefits

• As a Freewheeling Diode we recommend our

HEXFRED
minimum EMI / Noise and switching losses in the
Diode and IGBT

• Latest generation 4 IGBTs offer highest power

density motor controls possible

• This part replaces the IRGPC50K and IRGPC50M

devices

TM

ultrafast, ultrasoft recovery diodes for

TO-247AC

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 52
IC @ TC = 100°C Continuous Collector Current 30 A
I

CM

I

LM

t

sc

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 78
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current Q 104
Clamped Inductive Load Current R 104
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy S 170 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Wt Weight 6 (0.21) ––– g (oz)

Junction-to-Case ––– 0.64
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40

UltraFast IGBT

V

= 600V

CES

V

CE(on) typ.

@VGE = 15V, IC = 30A

= 1.84V

Short Circuit Rated

www.irf.com 1

4/15/2000

IRG4PC50K

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(ON)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

sc

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Notes:

Q Repetitive rating; V

max. junction temperature. ( See fig. 13b )

R V

Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.47 — V/°CVGE = 0V, IC = 1.0mA

J

— 1.84 2.2 I

Collector-to-Emitter Saturation Voltage — 2.19 — IC = 52 A See Fig.2, 5

— 1.79 — I

V

= 30A VGE = 15V

C

= 30A , TJ = 150°C

C

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -12 — mV/°CVCE = VGE, IC = 250µA

Forward Transconductance U 17 24 — SVCE = 100 V, IC = 30A
Zero Gate Voltage Collector Current

——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C

µA

——5000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge (turn-on) — 200 300 IC = 30A
Gate - Emitter Charge (turn-on) — 25 38 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 85 130 VGE = 15V
Turn-On Delay Time — 38 —
Rise Time — 34 — TJ = 25°C
Turn-Off Delay Time — 160 240 IC = 30A, VCC = 480V

ns

Fall Time — 79 120 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss — 0.49 — Energy losses include "tail"
Turn-Off Switching Loss — 0.68 — mJ See Fig. 9,10,14
Total Switching Loss — 1.12 1.4
Short Circuit Withstand Time 10 —— µs VCC = 400V, TJ = 125°C

VGE = 15V, RG = 10Ω , V
Turn-On Delay Time — 37 — TJ = 150°C,
Rise Time — 35 — IC = 30A, VCC = 480V
Turn-Off Delay Time — 260 — VGE = 15V, RG = 5.0Ω

ns

Fall Time — 170 — Energy losses include "tail"
Total Switching Loss — 2.34 — mJ See Fig. 11,14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 3200 — VGE = 0V
Output Capacitance — 370 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 95 —ƒ = 1.0MHz

= 80%(V

CC

CES

= 20V, pulse width limited by

GE

), V

= 20V, L = 10µH, RG = 5.0

GE

Ω

S Repetitive rating; pulse width limited by maximum

junction temperature.

T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.

CPK

< 500V

2 www.irf.com

IRG4PC50K

)

70

60

50

40

30

20

10

Square wave:

60% of rated
voltag e

I

Ideal diodes

0

0.1 1 10 100

For both:

Duty cy cle: 50%
T = 125°C

J

T = 90°C

sink

Gate drive as specified

Po w e r D i s s ip a t io n = 4 0 W

Triang ular wave:

Clamp v oltage:
80% of rated

f, Frequency (kHz

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

1000

of fundamental)

RMS

1000

A

°

T = 25 C

100

10

C

I , Collector-to-Emitter Current (A)

1

1 10

J

°

T = 150 C

J

V = 15V

GE

20µs PULSE WIDTH

V , Collector-to-Emitter Voltage (V)

CE

100

T = 150 C

10

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11 12

V , Gate-to-Emitter Voltage (V)

GE

°

J

°

T = 25 C

J

V = 50V

CC

5µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

www.irf.com 3