International Rectifier IRG4PC50 Datasheet

Parameter Max. Units

V

CES

Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 70
IC @ TC = 100°C Continuous Collector Current 39 A
I

CM

Pulsed Collector Current Q 280
I

LM

Clamped Inductive Load Current R 280
V

GE

Gate-to-Emitter Voltage ± 20 V
E

ARV

Reverse Voltage Avalanche Energy S 20 mJ
PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
T

J

Operating Junction and -55 to + 150
T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

IRG4PC50F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

PD 91468C

E

C

G

n-channel

TO-247AC

FeaturesFeatures

FeaturesFeatures

Features

• Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).

• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3

• Industry standard TO-247AC package

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

Benefits

V

CES

= 600V

V

CE(on) typ.

= 1.45V

@VGE = 15V, IC = 39A

12/30/00

Parameter Typ. Max. Units

R

θJC

Junction-to-Case ––– 0.64

R

θCS

Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W

R

θJA

Junction-to-Ambient, typical socket mount ––– 40

Wt Weight 6 (0.21) ––– g (oz)

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com 1

IRG4PC50F

2 www.irf .com

Parameter Min. Typ. Max. Units Conditions

Q

g

Total Gate Charge (turn-on) — 190 290 IC = 39A

Q

ge

Gate - Emitter Charge (turn-on) — 28 42 nC VCC = 400V See Fig. 8

Q

gc

Gate - Collector Charge (turn-on) — 65 97 VGE = 15V

t

d(on)

Turn-On Delay Time — 31 —

t

r

Rise Time — 25 — TJ = 25°C

t

d(off)

Turn-Off Delay Time — 240 350 IC = 39A, VCC = 480V

t

f

Fall Time — 130 190 VGE = 15V, RG = 5.0Ω

E

on

Turn-On Switching Loss — 0.37 — Energy losses include "tail"

E

off

Turn-Off Switching Loss — 2.1 — mJ See Fig. 10, 11, 13, 14

E

ts

Total Switching Loss — 2.47 3.0

t

d(on)

Turn-On Delay Time — 28 — TJ = 150°C,

t

r

Rise Time — 24 — IC = 39A, VCC = 480V

t

d(off)

Turn-Off Delay Time — 390 — VGE = 15V, RG = 5.0Ω

t

f

Fall Time — 230 — Energy losses include "tail"

E

ts

Total Switching Loss — 5.0 — mJ See Fig. 13, 14

L

E

Internal Emitter Inductance — 13 — nH Measured 5mm from package

C

ies

Input Capacitance — 4100 — VGE = 0V

C

oes

Output Capacitance — 250 — pF VCC = 30V See Fig. 7

C

res

Reverse Transfer Capacitance — 49 —ƒ = 1.0MHz

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA

V

(BR)ECS

Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A

∆V

(BR)CES

/∆T

J

Temperature Coeff. of Breakdown Voltage — 0.62 — V/°CVGE = 0V, IC = 1.0mA

— 1.45 1.6 I

C

= 39A VGE = 15V

V

CE(ON)

Collector-to-Emitter Saturation Voltage — 1.79 — IC = 70A See Fig.2, 5

— 1.53 — I

C

= 39A , TJ = 150°C

V

GE(th)

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

∆V

GE(th)

/∆TJTemperature Coeff. of Threshold Voltage — -14 — mV/°CVCE = VGE, IC = 250µA

g

fe

Forward Transconductance U 21 30 — SVCE = 100V, IC = 39A

——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C
——2000 VGE = 0V, VCE = 600V, TJ = 150°C

I

GES

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

I

CES

Zero Gate Voltage Collector Current

V

µA

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

ns

ns

T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.

Notes:

Q Repetitive rating; V

GE

= 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

R V

CC

= 80%(V

CES

), V

GE

= 20V, L = 10µH, RG = 5.0Ω,

(See fig. 13a)

S Repetitive rating; pulse width limited by maximum

junction temperature.

IRG4PC50F

www.irf .com 3

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

RMS

of fundamental; for triangular wave, I=IPK)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

0

20

40

60

80

100

0.1 1 10 100

f, Frequency (kHz

)

Load Current (A)

A

60% of rated
voltage

Ideal diodes

Square wave:

For both:

Duty cycle: 50%
T = 125 °C
T = 90 °C
Gate drive as specified

sink

J

Power Dissipation = 40W

Tri angular wave:

Clamp voltage:
80% of rated

1

10

100

1000

0.1 1 10

CE

C

I , Co llec tor-to-E mitter Cu rrent (A)

V , Colle cto r-to-E mitter V o ltage (V

)

T = 150°C

T = 25°C

J

J

V = 15V
20

µ

s PULSE WIDTH

GE

A

1

10

100

1000

5 6 7 8 9 101112

C

I , Colle cto r-to -Emitter Cu rre n t (A)

GE

T = 25°C

T = 150°C

J

J

V , G ate -to-E mitter V o ltage (V

)

A

V = 5 0 V
5µs PULSE WIDTH

CC