International Rectifier IRG4PC40UD Datasheet
PD 9.1467D
TO-247AC
IRG4PC40UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
FeaturesFeatures
Features
FeaturesFeatures
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
G
n-channel
bridge configurations
• Industry standard TO-247AC package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 40
IC @ TC = 100°C Continuous Collector Current 20
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 15
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 160
PD @ TC = 100°C Maximum Power Dissipation 65
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 160 A
Clamped Inductive Load Current 160
Diode Maximum Forward Current 160
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ------ 6 (0.21) ------ g (oz)
Junction-to-Case - IGBT ------ ------ 0.77
Junction-to-Case - Diode ------ ------ 1.7 °C/W
Case-to-Sink, flat, greased surface ------ 0.24 -----Junction-to-Ambient, typical socket mount ----- ----- 40
C
V
= 600V
CES
V
CE(on) typ.
E
@VGE = 15V, IC = 20A
= 1.72V
W
4/17/97
IRG4PC40UD
Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage ---- 1.72 2.1 IC = 20A VGE = 15V
---- 2.15 ---- V IC = 40A See Fig. 2, 5
---- 1.7 ---- IC = 20A, TJ = 150°C
V
∆V
g
I
CES
fe
GE(th)
GE(th)
Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 11 18 ---- S VCE = 100V, IC = 20A
Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 3500 VGE = 0V, VCE = 600V, TJ = 150°C
V
FM
Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 15A See Fig. 13
---- 1.2 1.6 IC = 15A, TJ = 150°C
I
GES
Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Qge Gate - Emitter Charge (turn-on) ---- 16 25 nC VCC = 400V See Fig. 8
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Total Gate Charge (turn-on) ---- 100 150 IC = 20A
Gate - Collector Charge (turn-on) ---- 40 60 VGE = 15V
Turn-On Delay Time ---- 54 ---- TJ = 25°C
Rise Time ---- 57 ---- ns IC = 20A, VCC = 480V
Turn-Off Delay Time ---- 110 165 VGE = 15V, RG = 10Ω
Fall Time ---- 80 120 Energy losses include "tail" and
Turn-On Switching Loss ---- 0.71 ---- diode reverse recovery.
Turn-Off Switching Loss ---- 0.35 ---- mJ See Fig. 9, 10, 11, 18
Total Switching Loss ---- 1.10 1.5
Turn-On Delay Time ---- 40 ---- TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time ---- 52 ---- ns IC = 20A, VCC = 480V
Turn-Off Delay Time ---- 200 ---- VGE = 15V, RG = 10Ω
Fall Time ---- 130 ---- Energy losses include "tail" and
Total Switching Loss ---- 1.6 ---- mJ diode reverse recovery.
Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
Input Capacitance ---- 2100 ---- VGE = 0V
Output Capacitance ---- 140 ---- pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ---- 34 ---- ƒ = 1.0MHz
Diode Reverse Recovery Time ---- 42 60 ns TJ = 25°C See Fig.
---- 74 120 TJ = 125°C 14 IF = 15A
Diode Peak Reverse Recovery Current ---- 4.0 6.0 A TJ = 25°C See Fig.
---- 6.5 10 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge ---- 80 180 nC TJ = 25°C See Fig.
---- 220 600 TJ = 125°C 16 di/dt 200A/µs
/dt Diode Peak Rate of Fall of Recovery ---- 19 0 ---- A/µs TJ = 25°C
During t
b
---- 160 ---- TJ = 125°C
IRG4PC40UD
A
A
A
30
Duty cycle: 50%
T = 125°C
J
T = 9 0 °C
sink
Gate drive as specified
Turn-on losses include
20
60% of rated
v o lta g e
10
Load Current (A)
0
0.1 1 10 100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
effects o f reve rse re c ov e ry
Pow er Dissipation = 35W
1000
100
10
C
I , Collector-to-Emitter Current (A)
1
0.1 1 10
V , Collector-to-Emitter Voltage (V)
CE
T = 25°C
J
T = 150°C
J
V = 15V
GE
20µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
1000
100
T = 150°C
J
T = 25°C
10
C
I , Collector-to-Emitter Current (A)
1
4681012
V , Gate-to-Emitter Voltage (V)
GE
J
V = 10V
CC
5µs PULSE WIDTH
Fig. 3 - Typical Transfer Characteristics
Loading...