International Rectifier IRG4PC40KD Datasheet

PD -91584A

IRG4PC40KD

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE

FeaturesFeatures

Features

FeaturesFeatures

• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, V

• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3

• IGBT co-packaged with HEXFRED
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations

GE

TM

= 15V

G

ultrafast,

n-chan nel

• Industry standard TO-247AC package

Benefits

• Generation 4 IGBTs offer highest efficiencies
available

• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing

• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 42
IC @ TC = 100°C Continuous Collector Current 25
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 15
I

FM

t

sc

V

GE

PD @ TC = 25°C Maximum Power Dissipation 160
PD @ TC = 100°C Maximum Power Dissipation 65
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current Q 84 A
Clamped Inductive Load Current R 84

Diode Maximum Forward Current 84
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

C

E

TO-247AC

Short Circuit Rated

UltraFast IGBT

V

= 600V

CES

V

CE(on) typ.

@VGE = 15V, IC = 25A

= 2.1V

W

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight ––– 6 (0.21) ––– g (oz)

Junction-to-Case - IGBT ––– ––– 0.77
Junction-to-Case - Diode ––– ––– 1.7 °C/W
Case-to-Sink, flat, greased surface ––– 0.24 –––
Junction-to-Ambient, typical socket mount ––– ––– 40

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4/15/2000

IRG4PC40KD

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown VoltageS 600 —— VVGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage — 0.46 — V/°CVGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.10 2.6 IC = 25A VGE = 15V

— 2.70 — VIC = 42A See Fig. 2, 5
— 2.14 — IC = 25A, TJ = 150°C

V
∆V
g
I

CES

GE(th)

GE(th)

fe

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -13 — mV/°CVCE = VGE, IC = 250µA

Forward Transconductance T 7.0 14 — SVCE = 100V, IC = 25A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 600V

——3500 VGE = 0V, VCE = 600V, TJ = 150°C

V

FM

Diode Forward Voltage Drop — 1.3 1.7 V IC = 15A See Fig. 13

— 1.2 1.6 IC = 15A, TJ = 150°C

I

GES

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q
Q
Q
t

d(on)

t

r

t

d(off)

t

f

E
E
E
t

sc

t

d(on)

t

r

t

d(off)

t

f

E
L
C
C
C
t

rr

g
ge
gc

on
off
ts

ts

E

ies
oes
res

Total Gate Charge (turn-on) — 120 180 IC = 25A
Gate - Emitter Charge (turn-on) — 16 24 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 51 77 VGE = 15V
Turn-On Delay Time — 53 —
Rise Time — 33 — TJ = 25°C
Turn-Off Delay Time — 110 160 IC = 25A, VCC = 480V

ns

Fall Time — 100 150 VGE = 15V, RG = 10Ω
Turn-On Switching Loss — 0.95 — Energy losses include "tail"
Turn-Off Switching Loss — 0.76 — mJ See Fig. 9,10,14
Total Switching Loss — 1.71 2.3
Short Circuit Withstand Time 10 —— µs VCC = 360V, TJ = 125°C

VGE = 15V, RG = 10Ω , V

CPK

Turn-On Delay Time — 52 — TJ = 150°C,
Rise Time — 37 — IC = 25A, VCC = 480V
Turn-Off Delay Time — 220 — VGE = 15V, RG = 10Ω

ns

Fall Time — 140 — Energy losses include "tail"
Total Switching Loss — 2.67 — mJ See Fig. 11,14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 1600 — VGE = 0V
Output Capacitance — 130 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 55 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig.

< 500V

— 74 120 TJ = 125°C 14 IF = 15A

I

rr

Diode Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C See Fig.

— 6.5 10 TJ = 125°C 15 VR = 200V

Q

rr

Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig.

— 220 600 TJ = 125°C 16 di/dt = 200Aµs

di

/dt Diode Peak Rate of Fall of Recovery — 188 — A/µs TJ = 25°C See Fig.

(rec)M

During t

b

— 160 — TJ = 125°C 17

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A

30

25

20

15

Square wave:

60 % o f r a ted
v o l tage

IRG4PC40KD

For both:

Duty cycle: 50%
T = 125°C

J

T = 9 0°C

sink

Gate drive as specified

Pow e r D issip ation = W

35

10

I

LOAD CURRENT (A)

5

0

0.1 1 10 100

Ideal diodes

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

100

10

o

T = 150 C

J

(Load Current = I

of fundamental)

RMS

100

10

T = 150°C

J

T = 25°C

J

o

T = 25 C

J

C

I , Collector-to-Emitter Current (A)

1

0.1 1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE

20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

C

I , Collector-to-Emitter Current (A)

1

57911

V , Gate-to-Emitter Voltage (V)

GE

V = 50V

CC

5µs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics

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