International Rectifier IRG4PC30U Datasheet

PD 91461E

TO-247AC

IRG4PC30U

INSULATED GATE BIPOLAR TRANSISTOR

FeaturesFeatures

Features

FeaturesFeatures

• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200

UltraFast Speed IGBT

C

V

CES

= 600V

kHz in resonant mode

• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3

• Industry standard TO-247AC package

G

E

V

CE(on) typ.

= 1.95V

@VGE = 15V, IC = 12A

n-channel

Benefits

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 23
IC @ TC = 100°C Continuous Collector Current 12 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 100
PD @ TC = 100°C Maximum Power Dissipation 42
T

J

T

STG

Collector-to-Emitter Breakdown Voltage 600 V

Pulsed Collector Current Q 92
Clamped Inductive Load Current R 92
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy S 10 mJ

Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

W

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Wt Weight 6 (0.21) ––– g (oz)

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Junction-to-Case ––– 1.2
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40

12/30/00

IRG4PC30U

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(ON)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Notes:

Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.63 — V/°CVGE = 0V, IC = 1.0mA

J

— 1.95 2.1 I

Collector-to-Emitter Saturation Voltage — 2.52 — IC = 23A See Fig.2, 5

— 2.09 — I

V

= 12A VGE = 15V

C

= 12A , TJ = 150°C

C

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -13 — mV/°CVCE = VGE, IC = 250µA

Forward Transconductance U 3.1 8.6 — SVCE = 100 V, IC = 12A
Zero Gate Voltage Collector Current

——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C

µA

——1000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge (turn-on) — 50 75 IC = 12A
Gate - Emitter Charge (turn-on) — 8.1 12 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 18 27 VGE = 15V
Turn-On Delay Time — 17 —
Rise Time — 9.6 — TJ = 25°C
Turn-Off Delay Time — 78 120 IC = 12A, VCC = 480V

ns

Fall Time — 97 150 VGE = 15V, RG = 23Ω
Turn-On Switching Loss — 0.16 — Energy losses include "tail"
Turn-Off Switching Loss — 0.20 — mJ See Fig. 10, 11, 13, 14
Total Switching Loss — 0.36 0.50
Turn-On Delay Time — 20 — TJ = 150°C,
Rise Time — 13 — IC = 12A, VCC = 480V
Turn-Off Delay Time — 180 — VGE = 15V, RG = 23Ω

ns

Fall Time — 140 — Energy losses include "tail"
Total Switching Loss — 0.73 — m J See Fig. 13, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 1100 — VGE = 0V
Output Capacitance — 73 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 14 —ƒ = 1.0MHz

Q Repetitive rating; V

= 20V, pulse width limited by

GE

max. junction temperature. ( See fig. 13b )

R V

CC

(See fig. 13a)

= 80%(V

CES

), V

= 20V, L = 10µH, RG = 23Ω,

GE

T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.

S Repetitive rating; pulse width limited by maximum

junction temperature.

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IRG4PC30U

A

µ

A

A

40

30

20

Square wave:

60% of rated
voltage

For both:

Duty cycle: 50%
T = 125°C

J

T = 90 °C

sink

Gate drive as specified
Power Dissipation = 24W

Triangular wave:

Clamp voltage:
80% of rated

Load Current (A)

10

0

0.1 1 10 100

Ideal diodes

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

100

of fundamental; for triangular wave, I=IPK)

RMS

100

J

T = 25°C

T = 150°C

10

1

C

I , C ollector-to-Emitter Current (A)

0.1

0.1 1 10

V , Collecto r -to-E mitter V oltage (V)

CE

V = 1 5V
20

J

GE

s PULSE WIDTH

Fig. 2 - Typical Output Characteristics

T = 150°C

J

10

T = 25°C

J

1

C

I , Co llecto r-to -E m itte r C urre n t (A )

0.1
5 6 7 8 9 101112

V , Ga te-to -Emitter V oltage (V)

GE

V = 1 0V

CC

5µs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics

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